Datasheet ntjs4160n-d Datasheet

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NTJS4160N

Power MOSFET

30 V, 3.2 A, Single N-Channel, SC-88

Features

•Offers an Low R

•Low Profile (< 1.1 mm) Allows it to fit Easily into Extremely Thin

Environments such as Portable Electronics

•Operates at Standard Logic Level Gate Drive

•Low Gate Charge

•This is a Pb-Free Device

Applications

•DC-DC Converters (Buck and Boost Circuit)

•Optimized for Battery Powered Portable Equipment such as,

Cell Phones, PDAs, Media Players, etc.

•Load Management

•Battery Charging and OV IC Protection Circuits

MAXIMUM RATINGS (T

Parameter Symbol Value Unit

Drain-to-Source Voltage V

Gate-to-Source Voltage V

Continuous Drain Current (Note 1)

Power Dissipation (Note 1)

Continuous Drain Current (Note 2)

Power Dissipation (Note 2)

Pulsed Drain Current

Operating Junction and Storage Temperature TJ,

Source Current (Body Diode) I

Lead Temperature for Soldering Purposes (1/8” from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).

2. Surface mounted on FR4 board using the minimum recommended pad size.

Solution in the SC-88 Package

DS(on)

= 25°C unless otherwise stated)

DSS

STG

Steady

State

t ≤ 1 s TA = 25 °C 3.2

Steady

State

t ≤ 1 s 0.95

Steady

State

TA = 25 °C

TA = 85 °C 1.9

TA = 25 °C

TA = 85 °C 1.3

TA = 25 °C

tp = 10 ms

30 V

±20 V

2.6

0.62

1.8

0.3 W

10 A

-55 to 150

1.3 A

260 °C

°C

http://onsemi.com

(BR)DSS

30 V

TYP ID Max

DS(on)

45 mW @ 10 V

65 mW @ 4.5 V

3.2 A

MARKING DIAGRAM

SC-88 (SOT 363)

CASE 419B

STYLE 28

T7 = Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location)

T7 MG

SC-88

(SOT-363)

Top View

ORDERING INFORMATION

Device Package Shipping

NTJS4160NT1G SC-88

(Pb-Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

3000 Units/Reel

†

© Semiconductor Components Industries, LLC, 2008

March, 2008 - Rev. 1

1 Publication Order Number:

NTJS4160N/D

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NTJS4160N

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Unit

Junction-to-Ambient – Steady State (Note 3)

Junction-to-Ambient - t ≤ 1 s (Note 3)

Junction-to-Ambient – Steady State (Note 4)

3. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).

4. Surface mounted on FR4 board using the minimum recommended pad size.

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise stated)

Parameter Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage V

Drain-to-Source Breakdown Voltage Temperature Coefficient

(BR)DSS/TJ

Zero Gate Voltage Drain Current I

Gate-to-Source Leakage Current I

(BR)DSS

DSS

GSS

= 250 mA, ref to 25°C

= 0 V,

= 24 V

= 0 V, V

= 0 V, I

= 250 mA

= 25°C

= 125°C

= +20 V

= -20 V

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage V

Gate Threshold Temperature Coefficient

GS(TH)/TJ

Drain-to-Source On Resistance R

Forward Transconductance g

GS(TH)

DS(on)

= VDS, ID = 250 mA

= 10 V, I

= 4.5 V, I

= 5.0 V, I

= 2.6 A 45 60

= 2.2 A 65 85

= 3.0 A 4.2 S

CHARGES AND CAPACITANCES

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate-to-Source Charge Q

Gate-to-Drain Charge Q

ISS

OSS

RSS

G(TOT)

G(TH)

= 0 V, f = 1.0 MHz,

= 4.5 V, V

= 2.6 A

= 10 V

= 15 V,

SWITCHING CHARACTERISTICS (Note 6)

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

d(ON)

d(OFF)

= 4.5 V, V

= 1.0 A, R

= 15 V,

= 6.0 W

DRAIN-SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage V

Reverse Recovery Time t

Charge Time T

Discharge Time T

Reverse Recovery Charge Q

= 0 V,

= 1.3 A

= 0 V, dIS/dt = 100 A/ms,

= 1.3 A

= 125°C

= 25°C

5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.

6. Switching characteristics are independent of operating junction temperatures.

30 V

0.8 2.4 V

200

°C/W

132

420

20 mV/°C

1.0 mA

100

-200

-5.0 mV/°C

230

2.75

0.37

0.87

1.1

8.7 15

7.2 13

10.9 19

1.9 4.0

0.79 1.2

0.67

10.3

7.2

3.1

4.0 nC

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NTJS4160N

6 V

5 V 4.0 V

10 V

DRAIN CURRENT (AMPS)

0.5 3.51.5 2.5

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 1. On-Region Characteristics

0.4

0.35

0.3

0.25

0.2

TYPICAL PERFORMANCE CURVES (T

DRAIN CURRENT (AMPS)

0.1

0.05

TJ = 25°C

VGS = 3.8 V

TJ = 25°C

ID = 2.6 A

3.6 V

3.4 V

3.2 V

3.0 V

2.8 V

2.6 V

2.4 V

= 25°C unless otherwise noted)

VDS ≥ 4 V

TJ = 150°C

25°C

1.5

2.5

VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

TJ = 25°C

VGS = 4.5 V

VGS = 10 V

TJ = -55°C

32 3.5

0.15

0.1

0.05

DRAIN-TO-SOURCE RESISTANCE (W)

1.0 2.0

DS(on),

Figure 3. On-Resistance vs. Gate Voltage

1.6

1.5

1.4

1.3

1.2

1.1

DRAIN-TO-SOURCE

0.9

0.8

DS(on),

RESISTANCE (NORMALIZED)

0.7

0.6

-50 0-25 25

5.0

4.03.0

7.0 109.08.06.0

VGS, GATE VOLTAGE (V)

ID = 2.6 A

4.5 < VGS < 10 V

50 125100

75 150

TJ, JUNCTION TEMPERATURE (°C)

DRAIN-TO-SOURCE RESISTANCE (W)

1.0 4.0

0 2.0 106.0

DS(on),

ID, DRAIN CURRENT (AMPS)

5.03.0

7.0 8.0

Figure 4. On-Resistance vs. Drain Current and

Gate Voltage

1000

VGS = 0 V

TJ = 150°C

100

TJ = 125°C

LEAKAGE (nA)

DSS,

01510

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

9.0

Figure 5. On-Resistance Variation with

Temperature

http://onsemi.com

Figure 6. Drain-to-Source Leakage Current

vs. Voltage

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NTJS4160N

TYPICAL PERFORMANCE CURVES (T

400

350

300

250

200

150

100

C, CAPACITANCE (pF)

oss

rss

DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 7. Capacitance Variation Figure 8. Gate-to-Source and

100

VDD = 15 V ID = 1.0 A VGS = 4.5 V

t, TIME (ns)

d(off)

d(on)

Figure 9. Resistive Switching Time Variation

VGS = 0 V

iss

2050

101

RG, GATE RESISTANCE (OHMS)

vs. Gate Resistance

TJ = 25°C

3015

100

= 25°C unless otherwise noted)

, GATE-TO-SOURCE VOLTAGE (VOLTS)

QG, TOTAL GATE CHARGE (nC)

Drain-to-Source Voltage vs. Total Charge

1.3 VGS = 0 V

1.2

1.1

1.0

TJ = 150°C

0.9

0.8

0.7

0.6

0.5

0.4

0.3

, SOURCE CURRENT (AMPS)

0.2

0.1

0.4

0.5

0.6 0.7 0.8 0.9 1.0

VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

Figure 10. Diode Forward Voltage vs. Current

TJ = 125°C

TJ = 25°C

ID = 2.6 A TJ = 25°C

TJ = -40°C

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

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NTJS4160N

PACKAGE DIMENSIONS

SC-88 (SOT-363)

CASE 419B-02

ISSUE W

STYLE 28:

654

123

-E-

PIN 1. DRAIN

2. DRAIN

3. GATE

4. SOURCE

5. DRAIN

6. DRAIN

b 6 PL

E0.2 (0.008)

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 419B-01 OBSOLETE, NEW STANDARD 419B-02.

MILLIMETERS

DIM MIN NOM MAX

A 0.80 0.95 1.10 A1 0.00 0.05 0.10 A3

b 0.10 0.21 0.30

C 0.10 0.14 0.25

D 1.80 2.00 2.20

E 1.15 1.25 1.35

e 0.65 BSC

L 0.10 0.20 0.30 H

0.20 REF 0.008 REF

2.00 2.10 2.20

INCHES

MIN NOM MAX

0.031 0.037 0.043

0.000 0.002 0.004

0.004 0.008 0.012

0.004 0.005 0.010

0.070 0.078 0.086

0.045 0.049 0.053

0.026 BSC

0.004 0.008 0.012

0.078 0.082 0.086

SOLDERING FOOTPRINT*

0.50

0.0197

0.65

0.025

0.65

0.025

0.40

0.0157

1.9

0.0748

SCALE 20:1

inches

*For additional information on our Pb-Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NTJS4160N/D