Datasheet ntjs4151p Datasheet

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Page 1

NTJS4151P

Trench Power MOSFET

−20 V, −4.2 A, Single P−Channel, SC−88

Features

• Leading Trench Technology for Low R

• SC−88 Small Outline (2x2 mm) for Maximum Circuit Board

Utilization, Same as SC−70−6

• Gate Diodes for ESD Protection

• Pb−Free Package is Available

Applications

• High Side Load Switch

• Cell Phones, Computing, Digital Cameras, MP3s and PDAs

MAXIMUM RATINGS (T

Parameter Symbol Value Unit

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain

Current (Note 1)

Power Dissipation

(Note 1)

Pulsed Drain Current

Operating Junction and Storage Temperature TJ,

Source Current (Body Diode) I

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

ESD Human Body Model (HBM) ESD 4000 V

THERMAL RESISTANCE RATINGS (Note 1)

Parameter

Junction−to−Ambient – Steady State

Junction−to−Ambient − t ≤ 5 s

Junction−to−Lead – Steady State

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).

= 25°C unless otherwise stated)

Steady

State

t ≤ 5 s TA = 25 °C −4.2

Steady

State

TA = 25 °C

TA = 85 °C −2.4

TA = 25 °C P

tp = 10 ms

Extending Battery Life

DS(ON)

DSS

STG

Symbol Max Unit

−20 V

±12 V

−3.3

1.0 W

−10 A

−55 to

150

−1.3 A

260 °C

125

°C

°C/W

http://onsemi.com

(BR)DSS

−20 V

Typ ID Max

DS(on)

47 mW @ −4.5 V

70 mW @ −2.5 V

180 mW @ −1.8 V

−4.2 A

SC−88 (SOT−363)

Top View

MARKING DIAGRAM &

PIN ASSIGNMENT

DDS

SC−88/SOT−363

CASE 419B

TY = Device Code M = Date Code G = Pb−Free Package

(Note: Microdot may be in either location)

TY M G

DDG

ORDERING INFORMATION

Device Package Shipping

NTJS4151PT1 SC−88 3000 / Tape & Reel

NTJS4151PT1G

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

SC−88

(Pb−Free)

3000 / Tape & Reel

†

February, 2006 − Rev. 1

1 Publication Order Number:

NTJS4151P/D

Page 2

NTJS4151P

ELECTRICAL CHARACTERISTICS (T

Parameter

=25°C unless otherwise stated)

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

(BR)DSS/TJ

DSS

GSS

= 0 V, I

= −16 V,

= 0 V

= 0 V, V

= −250 mA

= ±4.5 V ±1.5

= ±12 V ±10 mA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

Negative Threshold Temperature

Coefficient

Drain−to−Source On Resistance R

Forward Transconductance g

GS(TH)

GS(TH)/TJ

DS(on)

= VDS, ID = −250 mA

= −4.5 V, I

= −2.5 V, I

VGS = −1.8 V, I

= −10 V, I

= −3.3 A 47 60

= −2.3 A 70 85

= −3.3 A 12 S

CHARGES AND CAPACITANCES

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

ISS

OSS

RSS

G(TOT)

= 0 V, f = 1.0 MHz,

= −4.5 V, V

= −10 V

= −3.3 A

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

Fall Time t

d(ON)

d(OFF)

= −4.5 V, V = −1.0 A, R

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Charge Time T

Discharge Time T

Reverse Recovery Charge Q

= 0 V, I

= 25°C

= −1.3 A,

= 0 V, dIS/dt = 100

A/ms, = −1.3 A

2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperatures.

−20 V

−12 mV/°C

= 25°C −1.0 mA

= 85°C −5.0

−0.40 −1.2 V

4.0 mV/°C

= −1.0 A 180 205

850

160

110

= −10 V,

1.5

2.8

0.85 ms

= −10 V,

= 6.0 W

1.7

2.7

4.2

−0.75 −1.2 V

9.0

0.23 nC

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Page 3

NTJS4151P

VGS = −1.8 V

TJ = 25°C

VGS = −2.4 V

VGS = −2.0 V

VGS = −1.6 V

VGS = −2.8 V to 6.0 V

VGS = −1.4 V

VGS = −1.2 V

, DRAIN CURRENT (A)

−I

VGS = −1.0 V

02468

−V

, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics

0.5 ID = −3.3 A

= 25°C

0.4

0.3

0.2

VDS w −10 V

, DRAIN CURRENT (A)

−I

01234

, DRAIN−TO−SOURCE VOLTAGE (V)

−V

Figure 2. On−Region Characteristics

0.6

TJ = 25°C

0.5

0.4

0.3

(W)

0.2

VGS = −1.8 V

0.1

, DRAIN−TO−SOURCE RESISTANCE (W)

(on)

0246

RDS

−V

, GATE−TO−SOURCE VOLTAGE (V)

Figure 3. On−Resistance versus

Gate−to−Source Voltage

1.6

1.4

1.2

(NORMALIZED)

0.8

, DRAIN−TO−SOURCE RESISTANCE

(on)

0.6

RDS

ID = −3.3 A

= 4.5 V

−50 −25 0 25 50 75 100 125 150

0.1

, DRAIN−TO−SOURCE RESISTANCE

(on)

12345

RDS

VGS = −4.5 V

, DRAIN CURRENT (A)

−I

VGS = −2.5 V

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

100000

VGS = 0 V

TJ = 150°C

10000

, LEAKAGE (nA)

1000

DSS

−I

100

048121620

, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

http://onsemi.com

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 6. Drain−to−Source Leakage Current

versus Voltage

Page 4

NTJS4151P

1250

VGS = 0 V T

= 25°C

1000

ISS

750

500

C, CAPACITANCE (pF)

250

048121620

Figure 7. Capacitance Variation

10000

d(off)

1000

t, TIME (ns)

d(on)

ID = −3.3 A

= 25°C

, GATE−TO−SOURCE VOLTAGE (V)

−V 024681012

QG, TOTAL GATE CHARGE (nC)

Figure 8. Gate−to−Source and

Drain−to−Source Voltage versus Total Charge

VGS = 0 V T

= 25°C

2.5

1.5

, SOURCE CURRENT (A)

0.5

−I

, DRAIN−TO−SOURCE VOLTAGE (V)

−V

100

1 10 100

RG, GATE RESISTANCE (W)

Figure 9. Resistive Switching Time Variation

Gate Resistance

0.4 0.5 0.6 0.7 0.8 0.9

−VSD, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 10. Diode Forward Voltage versus

Current

http://onsemi.com

Page 5

NTJS4151P

PACKAGE DIMENSIONS

SC−88/SC70−6/SOT−363

CASE 419B−02

ISSUE W

NOTES:

654

123

−E−

6 PL

E0.2 (0.008)

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.

MILLIMETERS

DIM MIN NOM MAX

A 0.80 0.95 1.10 A1 0.00 0.05 0.10 A3

b 0.10 0.21 0.30

C 0.10 0.14 0.25

D 1.80 2.00 2.20

E 1.15 1.25 1.35

e 0.65 BSC

L 0.10 0.20 0.30

0.20 REF 0.008 REF

2.00 2.10 2.20

INCHES

MIN NOM MAX

0.031 0.037 0.043

0.000 0.002 0.004

0.004 0.008 0.012

0.004 0.005 0.010

0.070 0.078 0.086

0.045 0.049 0.053

0.026 BSC

0.004 0.008 0.012

0.078 0.082 0.086

SOLDERING FOOTPRINT*

0.50

0.0197

0.65

0.025

0.65

0.025

0.40

0.0157

1.9

0.0748

SCALE 20:1

inches

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NTJS4151P/D