Datasheet ntjs3157n Datasheet

NTJS3157N

Trench Power MOSFET

20 V, 4.0 A, Single N−Channel, SC−88

Features

• Leading Trench Technology for Low R

• Fast Switching for Increased Circuit Efficiency

• SC−88 Small Outline (2 x 2 mm) for Maximum Circuit Board

Utilization, Same as SC−70−6

• Pb−Free Packages are Available

Applications

• DC−DC Conversion

• Low Side Load Switch

• Cell Phones, Computing, Digital Cameras, MP3s and PDAs

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain

Current (Note 1)

Power Dissipation

(Note 1)

Pulsed Drain Current

Operating Junction and Storage Temperature TJ,

Source Current (Body Diode) I

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

THERMAL RESISTANCE RATINGS (Note 1)

Parameter

Junction−to−Ambient – Steady State

Junction−to−Ambient − t ≤ 5 s

Junction−to−Lead – Steady State

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.

1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).

= 25°C unless otherwise stated)

J

Steady

State

t ≤ 5 s TA = 25 °C 4.0

Steady

State

TA = 25 °C

TA = 85 °C 2.3

TA = 25 °C

tp = 10 ms

Extending Battery Life

DS(ON)

Symbol Value Unit

DSS

GS

I

D

P

D

I

DM

T

STG

S

T

L

Symbol Max Unit

R

q

JA

R

q

JA

R

q

JL

20 V

±8.0 V

3.2

1.0 W

10 A

−55 to
150

1.6 A

260 °C

125

80

45

A

°C

°C/W

http://onsemi.com

V

(BR)DSS

20 V

R

Typ ID Max

DS(on)

45 mW @ 4.5 V

55 mW @ 2.5 V

70 mW @ 1.8 V

4.0 A

SC−88 (SOT−363)

D

1

D

2

G

3

Top View

D

6

D

5

S

4

MARKING DIAGRAM &

PIN ASSIGNMENT

DDS

1

SOT−363

CASE 419B

STYLE 28

T92 = Device Code
M = Date Code
G = Pb−Free Package

(Note: Microdot may be in either location)

6

T92 M G

G

1

DDG

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.

© Semiconductor Components Industries, LLC, 2006

February, 2006 − Rev. 2

1 Publication Order Number:

NTJS3157N/D

NTJS3157N

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise stated)

J

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Drain−to−Source Breakdown Voltage

Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

V

(BR)DSS

V

(BR)DSS/TJ

DSS

GSS

V
V

V

V

GS

V

GS

GS
DS

DS

= 0 V, I

= 0 V, I

= 0 V,
= 16 V

= 0 V, V

= 250 mA

D

= 250 mA

D

T

T

= ±8.0 V ±100 nA

GS

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage V

Negative Threshold Temperature

Coefficient

Drain−to−Source On Resistance R

Forward Transconductance g

GS(TH)

V

GS(TH)/TJ

DS(on)

FS

V

= VDS, ID = 250 mA

GS

V

= 4.5 V, I

GS

V

= 2.5 V, I

GS

VGS = 1.8 V, I

V

= 10 V, I

GS

= 4.0 A 45 60

D

= 3.6 A 55 70

D

= 2.0 A 70 85

D

= 3.2 A 9.0 S

D

CHARGES AND CAPACITANCES

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

C

ISS

OSS

RSS

G(TOT)

GS

GD

V

= 0 V, f = 1.0 MHz,

GS

V

GS

V

DS

= 4.5 V, V

I

= 3.2 A

D

= 10 V

DS

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

Fall Time t

t

d(on)

d(off)

r

f

V

GS

I

D

= 4.5 V, V

= 0.5 A, R

DD

= 6.0 W

G

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

V

Reverse Recovery Time t

Charge Time T

Discharge Time T

Reverse Recovery Charge Q

SD

RR

a

b

RR

V

=0 V,

GS

I

= 1.6 A

S

V

= 0 V, dIS/dt = 100 A/ms,

GS

I

= 1.6 A

S

T

2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperatures.

20 V

12 mV/°C

= 25°C 1.0 mA

J

= 85°C 5.0

J

0.40 V

−4.0 mV/°C

500

75

60

6.9 15

= 10 V,

1.0

1.8

6.0 15

= 10 V,

12 25

21 45

11 25

= 25°C 0.7 1.0 V

J

15

12

3.0

5.0 nC

mW

pF

nC

ns

ns

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2

NTJS3157N

10

8

8 V
4 V
2 V

6

4

DRAIN CURRENT (AMPS)

2

D,

I

0.8 V

0

1735 9

0

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

0.25

0.2

0.15

0.1

0.05

DRAIN−TO−SOURCE RESISTANCE (W)

0

DS(on),

R

1

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

3

TYPICAL PERFORMANCE CURVES (T

12

4

TJ = 25°C

62

VGS = 1.8 V

1.6 V

1.4 V

1.2 V

1 V

ID = 4 A
T

= 25°C

J

75

108

10

DRAIN CURRENT (AMPS)

D,

I

0.1

0.09

0.08

0.07

0.06

0.05

0.04

DRAIN−TO−SOURCE RESISTANCE (W)

0.03

DS(on),

R

= 25°C unless otherwise noted)

J

VDS ≥ 10 V

8

6

4

1.5

25°C

213

2

0

0

TJ = −55°C

TJ = 125°C

0.5

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

TJ = 25°C

VGS = 1.8 V

VGS = 2.5 V

VGS = 4.5 V

25

13 97

DRAIN CURRENT (AMPS)

I

D,

64

2.5

8

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

1.8
ID = 4.0 A

V

= 4.5 V

GS

1.6

1.4

1.2

DRAIN−TO−SOURCE

1

DS(on),

0.8

R

RESISTANCE (NORMALIZED)

0.6

−50 0−25 25

75 150

50 125100

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

10000

1000

LEAKAGE (nA)

DSS,

I

100

22012

http://onsemi.com

3

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

VGS = 0 V

TJ = 150°C

TJ = 100°C

4

68 1614

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

V

DS

10

18

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

NTJS3157N

1400

1200

C

1000

800

600

C

400

C, CAPACITANCE (pF)

200

0

100

VDS = 10 V
I

D

V

TYPICAL PERFORMANCE CURVES (T

VDS = 0 V

iss

rss

GATE−TO−SOURCE OR DRAIN−TO−SOURCE

= 0.5 A

= 4.5 V

GS

VGS = 0 V

C

rss

42012

V

GSVDS

80

VOLTAGE (VOLTS)

Figure 7. Capacitance Variation

t

d(off)

TJ = 25°C

= 25°C unless otherwise noted)

J

V

DS,

5

4

V

DS

Q

G(TOT)

V

GS

3

Q

C

iss

2

1

C

oss

1648

GATE−TO−SOURCE VOLTAGE (VOLTS)

0

GS,

06

V

GS

Q

GD

ID = 3.2 A
T

= 25°C

J

5731

42

10

DRAIN−TO−SOURCE VOLTAGE (VOLTS)

8

6

4

2

0

8

Qg, TOTAL GATE CHARGE (nC)

Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

6

5

4

VGS = 0 V

TJ = 25°C

t

f

t

r

10

t, TIME (ns)

1

101

R

, GATE RESISTANCE (OHMS)

G

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

t

d(on)

3

2

, SOURCE CURRENT (AMPS)

1

S

I

0

100

V

SD

Figure 10. Diode Forward Voltage vs. Current

0.60.4

0.8

0.90.70.50.3

, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

10.2

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4

NTJS3157N

ORDERING INFORMATION

Device Package Shipping

NTJS3157NT1 SC−88 3000 Tape & Reel

NTJS3157NT1G SC−88

(Pb−Free)

NTJS3157NT2 SC−88 3000 Tape & Reel

NTJS3157NT2G SC−88

(Pb−Free)

NTJS3157NT4 SC−88 10,000 Tape & Reel

NTJS3157NT4G SC−88

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

3000 Tape & Reel

3000 Tape & Reel

10,000 Tape & Reel

†

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5

NTJS3157N

PACKAGE DIMENSIONS

SC−88/SC70−6/SOT−363

CASE 419B−02

ISSUE W

NOTES:

D

e

A3

654

H

E

123

−E−

b

6 PL

MM

E0.2 (0.008)

L

C

A

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.

MILLIMETERS

DIM MIN NOM MAX

A 0.80 0.95 1.10
A1 0.00 0.05 0.10
A3

b 0.10 0.21 0.30

C 0.10 0.14 0.25

D 1.80 2.00 2.20

E 1.15 1.25 1.35

e 0.65 BSC

L 0.10 0.20 0.30

H

STYLE 28:

PIN 1. DRAIN

0.20 REF 0.008 REF

2.00 2.10 2.20

E

2. DRAIN

3. GATE

4. SOURCE

5. DRAIN

6. DRAIN

INCHES

MIN NOM MAX

0.031 0.037 0.043

0.000 0.002 0.004

0.004 0.008 0.012

0.004 0.005 0.010

0.070 0.078 0.086

0.045 0.049 0.053

0.026 BSC

0.004 0.008 0.012

0.078 0.082 0.086

A1

SOLDERING FOOTPRINT*

0.50

0.0197

0.65

0.025

0.65

0.025

0.40

0.0157

1.9

0.0748

SCALE 20:1

ǒ

inches

mm

Ǔ

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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NTJS3157N/D