Datasheet ntjs3151p Datasheet

Download

Page 1

NTJS3151P

Trench Power MOSFET

12 V, 3.3 A, Single P−Channel, ESD Protected SC−88

Features

• Leading Trench Technology for Low R

Extending Battery Life

DS(ON)

• SC−88 Small Outline (2x2 mm, SC70−6 Equivalent)

• Gate Diodes for ESD Protection

• Pb−Free Packages are Available

Applications

• High Side Load Switch

• Cell Phones, Computing, Digital Cameras, MP3s and PDAs

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain

Current (Note 1)

Power Dissipation

(Note 1)

Pulsed Drain Current

Operating Junction and Storage Temperature TJ,

Source Current (Body Diode) I

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

= 25°C unless otherwise stated)

Symbol Value Units

DSS

Steady

State

t ≤ 5 s TA = 25 °C −3.3

Steady

State

TA = 25 °C

TA = 85 °C −2.0

TA = 25 °C P

tp = 10 ms

STG

−12 V

±12 V

−2.7

0.625 W

−8.0 A

−55 to

150

−0.8 A

260 °C

°C

http://onsemi.com

(BR)DSS

−12 V

Typ ID Max

DS(on)

45 mW @ −4.5 V

67 mW @ −2.5 V

133 mW @ −1.8 V

−3.3 A

SC−88 (SOT−363)

Top View

3 kW

THERMAL RESISTANCE RATINGS (Note 1)

Parameter

Junction−to−Ambient – Steady State

Junction−to−Ambient − t ≤ 5 s

Junction−to−Lead – Steady State

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).

March, 2006 − Rev. 2

Symbol Max Units

°C/W

200

141

102

1 Publication Order Number:

MARKING DIAGRAM &

PIN ASSIGNMENT

DDS

SC−88/SOT−363

CASE 419B

STYLE 28

TJ = Device Code M = Date Code G = Pb−Free Package

(Note: Microdot may be in either location)

TJ M G

DDG

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet.

NTJS3151/D

Page 2

NTJS3151P

ELECTRICAL CHARACTERISTICS (T

Parameter

=25°C unless otherwise stated)

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

(BR)DSS/TJ

DSS

GSS

= 0 V, I

= −9.6 V,

= 0 V

= 0 V, V

= −250 mA

= ±4.5 V ±1.5

= ±12 V ±10 mA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

Negative Threshold Temperature

Coefficient

Drain−to−Source On Resistance R

Forward Transconductance g

GS(TH)

GS(TH)/TJ

DS(on)

= VDS, ID = 100 mA

= −4.5 V, I

= −2.5 V, I

VGS = −1.8 V, I

= −10 V, I

= −3.3 A 45 60

= −2.9 A 67 90

= −1.0 A 133 160

= −3.3 A 15 S

CHARGES AND CAPACITANCES

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

Gate Resistance R

ISS

OSS

RSS

G(TOT)

= 0 V, f = 1.0 MHz,

= −4.5 V, V

= −12 V

= −3.3 A

= −5.0 V,

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

Fall Time t

d(ON)

d(OFF)

= −4.5 V, V

= −1.0 A, R

= −6.0 V,

= 6.0 W

DRAIN−SOURCE DIODE CHARACTERISTICS (Note 2)

Forward Diode Voltage

= −3.3 A

= 0 V,

2. Pulse Test: pulse width ≤ 300ms, duty cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperatures.

−12 V

10 mV/°C

= 25°C −1.0 mA

= 125°C −2.5

−0.40 V

3.4 mV/°C

850

170

110

8.6

1.3

2.2

3000

0.86 ms

1.5

3.5

3.9

= 25°C −0.85 −1.2

= 125°C −0.7

http://onsemi.com

Page 3

NTJS3151P

VGS = −4.5 V

VGS = −3.4 V

−2.4 V

DRAIN CURRENT (AMPS)

−I

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

−V

Figure 1. On−Region Characteristics

0.1 VGS = −4.5 V

0.075

0.05

TYPICAL PERFORMANCE CURVES (T

TJ = 25°C

−2 V

DRAIN CURRENT (AMPS)

−I

0.5

0.4

0.3

0.2

TJ = 125°C

TJ = 25°C

−1.6 V

−1.4 V

−1.2 V

= 25°C unless otherwise noted)

VDS ≤ −12 V

125°C

25°C

1.5120.5

TJ = −55°C

2.5 3

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

VGS = −1.8 V

43.5

TJ = 25°C

4.5

0.025

DRAIN−TO−SOURCE RESISTANCE (W)

0.5 3.5

DS(on),

1.5 2.5 7.5

−ID, DRAIN CURRENT (AMPS)

TJ = −55°C

Figure 3. On−Resistance vs. Drain Current and

Temperature

2.0 ID = −3.3 A

1.8 V

= −4.5 V

1.6

1.4

1.2

1.0

0.8

DRAIN−TO−SOURCE

0.6

0.4

DS(on),

RESISTANCE (NORMALIZED)

0.2

−50 0−25 25

TJ, JUNCTION TEMPERATURE (°C)

75 150

50 125100

0.1

DRAIN−TO−SOURCE RESISTANCE (W)

6.54.5 5.5 0.5 3.51.5 2.5 7.56.54.5 5.5

DS(on),

−ID, DRAIN CURRENT (AMPS)

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

100000

10000

LEAKAGE CURRENT (nA)

DSS,

−I

VGS = 0 V

TJ = 150°C

1000

TJ = 125°C

100

012

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

VGS = −2.5 V

VGS = −4.5 V

Figure 5. On−Resistance Variation with

Temperature

http://onsemi.com

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

Page 4

NTJS3151P

TYPICAL PERFORMANCE CURVES (T

1600

1400

1200

1000

800

600

400

C, CAPACITANCE (pF)

200

rss

408

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total

10000

d(off)

TJ = 25°C

VGS = 0 V

iss

oss

= 25°C unless otherwise noted)

4.5

3.5

2.5

Q2Q1

1.5

0.5

GATE−TO−SOURCE VOLTAGE (VOLTS)

GS,

−V

, TOTAL GATE CHARGE (nC)

VGS = 0 V T

= 25°C

Gate Charge

ID = −3.3 A T

= 25°C

810

1000

t, TIME (ns)

100

d(on)

VDD = −6.0 V I

= −1.0 A

= −4.5 V

101

RG, GATE RESISTANCE (OHMS)

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

100

, SOURCE CURRENT (AMPS)

−I

0.2 0.50.3

, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

−V

0.4

0.6

Figure 10. Diode Forward Voltage vs. Current

0.8 0.9

0.70.10

http://onsemi.com

Page 5

NTJS3151P

ORDERING INFORMATION

Device Package Shipping

NTJS3151PT1 SC−88 3000 Tape & Reel

NTJS3151PT1G SC−88

(Pb−Free)

NTJS3151PT2 SC−88 3000 Tape & Reel

NTJS3151PT2G SC−88

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

3000 Tape & Reel

†

http://onsemi.com

Page 6

NTJS3151P

PACKAGE DIMENSIONS

SC−88/SC70−6/SOT−363

CASE 419B−02

ISSUE W

NOTES:

654

123

−E−

6 PL

E0.2 (0.008)

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.

MILLIMETERS

DIM MIN NOM MAX

A 0.80 0.95 1.10 A1 0.00 0.05 0.10 A3

b 0.10 0.21 0.30

C 0.10 0.14 0.25

D 1.80 2.00 2.20

E 1.15 1.25 1.35

e 0.65 BSC

L 0.10 0.20 0.30

STYLE 28:

PIN 1. DRAIN

0.20 REF 0.008 REF

2.00 2.10 2.20

2. DRAIN

3. GATE

4. SOURCE

5. DRAIN

6. DRAIN

INCHES

MIN NOM MAX

0.031 0.037 0.043

0.000 0.002 0.004

0.004 0.008 0.012

0.004 0.005 0.010

0.070 0.078 0.086

0.045 0.049 0.053

0.026 BSC

0.004 0.008 0.012

0.078 0.082 0.086

SOLDERING FOOTPRINT*

0.50

0.0197

0.65

0.025

0.65

0.025

0.40

0.0157

1.9

0.0748

SCALE 20:1

inches

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA

Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: [email protected]

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Japan: ON Semiconductor, Japan Customer Focus Center

2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051

Phone: 81−3−5773−3850

http://onsemi.com

ON Semiconductor Website: http://onsemi.com

Order Literature: http://www.onsemi.com/litorder

For additional information, please contact your local Sales Representative.

NTJS3151P/D