Datasheet ntjd5121n Datasheet

NTJD5121N

Power MOSFET

60 V, 295 mA, Dual N−Channel with ESD
Protection, SC−88

Features

• Low R

• Low Gate Threshold

• Low Input Capacitance

• ESD Protected Gate

• This is a Pb−Free Device

Applications

• Low Side Load Switch

• DC−DC Converters (Buck and Boost Circuits)

DS(on)

V

(BR)DSS

60 V

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R

MAX ID Max

DS(on)

1.6 W @ 10 V

2.5 W @ 4.5 V

SC−88 (SOT−363)

295 mA

MAXIMUM RATINGS (T

Parameter Symbol Value Units

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain
Current (Note 1)

Power Dissipation
(Note 1)

Pulsed Drain Current

Operating Junction and Storage Temperature TJ, T

Source Current (Body Diode) I

Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)

Gate−Source ESD Rating
(HBM, Method 3015)

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

= 25°C unless otherwise stated)

J

DSS

GS

Steady

State

t ≤ 5 s

Steady

State

t ≤ 5 s 266

TA = 25°C

TA = 85°C 212

TA = 25°C 304

TA = 85°C 219

TA = 25°C P

tp = 10 ms

I

D

D

I

DM

STG

S

T

L

ESD 1400 V

±20 V

295

250

900 mA

−55 to
150

210 mA

260 °C

60 V

mA

mW

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Value Units

Junction−to−Ambient – Steady State

Junction−to−Ambient – t ≤ 5 s

1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [2 oz] including traces).

R

q

JA

R

q

JA

500

470

°C/W

S

1

1

G

D

2

1

3

2

Top View

D

6

5

4

1

G

2

S

2

MARKING DIAGRAM &

PIN ASSIGNMENT

D1 G2 S2

1

SC−88/SOT−363

CASE 419B

STYLE 26

TF = Device Code
M = Date Code
G = Pb−Free Package

(Note: Microdot may be in either location)

6

TF M G

G

1

S1 G1 D2

ORDERING INFORMATION

Device Package Shipping

NTJD5121NT1G SC−88

(Pb−Free)

NTJD5121NT2G SC−88

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

3000 / Tape & Reel

3000 / Tape & Reel

†

© Semiconductor Components Industries, LLC, 2010

January, 2010 − Rev. 2

1 Publication Order Number:

NTJD5121N/D

NTJD5121N

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise stated)

J

Symbol Test Condition Min Ty p Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Drain−to−Source Breakdown Voltage
Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

V

(BR)DSS

V

(BR)DSS/TJ

DSS

GSS

V

GS

I

= 250 mA, ref to 25°C

D

V

= 0 V,

GS

V

= 60 V

DS

V

= 0 V, V

DS

= 0 V, I

= 250 mA

D

GS

T

T

J

= ±20 V ±10

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

Negative Threshold Temperature
Coefficient

Drain−to−Source On Resistance R

Forward Transconductance g

V

GS(TH)

V

GS(TH)/TJ

DS(on)

FS

V

= VDS, ID = 250 mA

GS

V

= 10 V, I

GS

V

= 4.5 V, I

GS

V

= 5 V, I

DS

= 500 mA 1.0 1.6 W

D

= 200 mA 1.2 2.5

D

= 200 mA 80 S

D

CHARGES AND CAPACITANCES

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

C

ISS

OSS

RSS

G(TOT)

G(TH)

GS

GD

V

= 0 V, f = 1.0 MHz,

GS

V

GS

V

= 20 V

DS

= 4.5 V, V

I

= 200 mA

D

DS

= 25 V,

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

Fall Time t

t

d(on)

d(off)

r

f

V

= 45 V, V

GS

= 200 mA, R

I

D

DD

G

= 25 V,

= 25 W

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

V

SD

V

GS

I

= 200 mA

S

= 0 V,

T

T

2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperatures.

60 V

92 mV/°C

= 25°C 1.0 mA

J

= 125°C 500

1.0 1.7 2.5 V

4.0 mV/°C

26

4.4

2.5

0.9

0.2

0.3

0.28

22

34

34

32

= 25°C 0.8 1.2

J

= 85°C 0.7

J

mA

pF

nC

ns

V

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2

NTJD5121N

TYPICAL PERFORMANCE CURVES (T

1.6

5 V

1.2

VGS = 10

4.5 V

4.2 V

2.4 V

0.8

2.2 V

DRAIN CURRENT (A)

0.4

D,

I

0

012345

V

, DRAIN−TO−SOURCE VOLTAGE (V)

DS

Figure 1. On−Region Characteristics

2.4

2

1.6

1.2

0.8

TJ = 125°C

TJ = 85°C

TJ = 25°C

TJ = −55°C

TJ = 25°C

4 V

3.8 V

3.6 V

3.4 V

3.2 V

3 V

2.8 V

2.6 V

VGS = 4.5 V

= 25°C unless otherwise noted)

J

1.2
VDS ≥ 10 V

1

0.8

0.6

0.4

DRAIN CURRENT (A)

D,

I

0.2

0

012345

25°C

TJ = 125°C

−55°C

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 2. Transfer Characteristics

2.4

VGS = 10 V

2

1.6

1.2

0.8

TJ = 125°C

TJ = 85°C

TJ = 25°C

TJ = −55°C

0.4

DRAIN−TO−SOURCE RESISTANCE (W)

0

DS(on),

0 0.2 0.4 0.6 0.8 1

R

ID, DRAIN CURRENT (A)

Figure 3. On−Resistance vs. Drain Current and

Temperature

2.4

ID = 500 mA

2

1.6

4.5 V

1.2

DRAIN−TO−SOURCE RESISTANCE (W)

ID = 200 mA

10 V

0.8
246810

DS(on),

R

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 5. On−Resistance versus

Gate−to−Source Voltage

0.4

DRAIN−TO−SOURCE RESISTANCE (W)

0

0 0.2 0.4 0.6 0.8 1

DS(on),

R

ID, DRAIN CURRENT (A)

Figure 4. On−Resistance vs. Drain Current and

Temperature

1.8
ID = 0.2 A
V

= 4.5 V and 10 V

GS

1.6

1.4

1.2

DRAIN−TO−SOURCE

1

DS(on),

0.8

R

RESISTANCE (NORMALIZED)

0.6

−50 −25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (°C)

Figure 6. On−Resistance Variation with

Temperature

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3

NTJD5121N

TYPICAL PERFORMANCE CURVES (T

40

TJ = 25°C
V

30

20

10

C, CAPACITANCE (pF)

C

iss

C

oss

C

rss

0

0 4 8 12 16 20

DRAIN−TO−SOURCE VOLTAGE (V)

Figure 7. Capacitance Variation

1

VGS = 0 V

GS

= 0 V

= 25°C unless otherwise noted)

J

5

ID = 0.2 A

= 25°C

T

J

4

= 25 V

V

DD

3

2

1

GATE−TO−SOURCE VOLTAGE (V)

GS,

0

V

0 0.2 0.4 0.6 0.8 1

Qg, TOTAL GATE CHARGE (nC)

Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

0.1

TJ = 85°C

TJ = 25°C

, SOURCE CURRENT (A)

S

I

0.01

0.4 0.6 0.8 1 1.2

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 9. Diode Forward Voltage vs. Current

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4

NTJD5121N

PACKAGE DIMENSIONS

SC−88/SC70−6/SOT−363

CASE 419B−02

ISSUE W

NOTES:

D

e

A3

654

H

E

123

−E−

b

6 PL

MM

E0.2 (0.008)

L

C

A

A1

SOLDERING FOOTPRINT*

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.

MILLIMETERS

DIM MIN NOM MAX

A 0.80 0.95 1.10
A1 0.00 0.05 0.10
A3

b 0.10 0.21 0.30

C 0.10 0.14 0.25

D 1.80 2.00 2.20

E 1.15 1.25 1.35

e 0.65 BSC

L 0.10 0.20 0.30

H

E

STYLE 26:

PIN 1. SOURCE 1

0.20 REF 0.008 REF

2.00 2.10 2.20

2. GATE 1

3. DRAIN 2

4. SOURCE 2

5. GATE 2

6. DRAIN 1

INCHES

MIN NOM MAX

0.031 0.037 0.043

0.000 0.002 0.004

0.004 0.008 0.012

0.004 0.005 0.010

0.070 0.078 0.086

0.045 0.049 0.053

0.026 BSC

0.004 0.008 0.012

0.078 0.082 0.086

0.50

0.0197

0.65

0.025

0.65

0.025

0.40

0.0157

1.9

0.0748

SCALE 20:1

ǒ

inches

mm

Ǔ

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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NTJD5121N/D