Datasheet ntjd4158c Datasheet

NTJD4158C

Small Signal MOSFET

30 V/−20 V, +0.25/−0.88 A, Complementary, SC−88

Features

• Leading 20 V Trench for Low R

DS(on)

Performance

• ESD Protected Gate

• SC−88 Package for Small Footprint (2 x 2 mm)

• This is a Pb−Free Device

Applications

• DC−DC Conversion

• Load/Power Management

• Load Switch

• Cell Phones, MP3s, Digital Cameras, PDAs

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage

Gate−to−Source Voltage

N−Channel

Continuous Drain Current (Note 1)

P−Channel

Continuous Drain Current (Note 1)

Power Dissipation (Note 1)

Pulsed Drain Current

Operating Junction and Storage Temperature TJ, T

Source Current (Body Diode)

Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Unit

Junction−to−Ambient – Steady State (Note 1)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).

= 25°C unless otherwise noted)

J

Symbol Value Unit

N−Ch

P−Ch −20

N−Ch

P−Ch ±12

T

= 25°C

Steady

State

Steady

State

Steady

State

N−Ch

P−Ch −3.0

A

T

= 85°C 0.18

A

T

= 25°C −0.88

A

T

= 85°C −0.63

A

T

= 25°C

A

tp = 10 ms

N−Ch

P−Ch −0.48

V

R

V

I

DSS

GS

I

D

P

DM

I

S

T

q

D

stg

L

JA

±20

0.25

0.27 W

0.5

−55 to 150

0.25

260 °C

460 °C/W

30

V

A

°C

A

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(BR)DSS

N−Ch

30 V

P−Ch

−20 V

S

1

G

1

D

2

Typ

DS(on)

1.0 W @ 4.5 V

1.5 W @ 2.5 V

215 mW @ −4.5 V

345 mW @ −2.5 V

SC−88 (SOT−363)

(6−Leads)

1

2

3

(Top View)

6

5

4

ID MaxV

0.25 A

−0.88 A

D

1

G

2

S

2

R

MARKING DIAGRAM &

PIN ASSIGNMENT

D1 G2 S2

1

SC−88 (SOT−363)

CASE 419B

STYLE 26

TCD = Specific Device Code M = Date Code G = Pb−Free Package

(Note: Microdot may be in either location)

6

TCD M G

G

1

S1 G1 D2

ORDERING INFORMATION

Device Package Shipping†

NTJD4158CT1G SC−88

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

3000 Tape & Reel

March, 2009 − Rev. 2

1 Publication Order Number:

NTJD4158C/D

NTJD4158C

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise noted)

J

Symbol N/P Test Condition Min Ty p Max Unit

OFF CHARACTERISTICS (Note 3)

Drain−to−Source

Breakdown Voltage

Drain−to−Source Breakdown

Voltage Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

V

(BR)DSS

V

(BR)DSS

T

DSS

GSS

N P

/

N 33

J

P −9.0 N V P V N V P V

GS

N P

V

= 0 V

GS

= 0 V, V

DS

= 0 V, V

DS

= 0 V, V

DS

= 0 V, V

DS

V

DS

V

= 0 V, VGS = −4.5 V

DS

= 30 V

= −16 V 1.0

= 30 V

= −16 V 0.5

= 0 V, VGS = 10 V

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

Negative Gate Threshold

Temperature Coefficient

Drain−to−Source On Resistance R

Forward Transconductance g

V

GS(TH)

V

GS(TH)

DS(on)

N P

/

T

J

N 3.2 P −2.7 N V P V N V P V

FS

N V P V

V

GS

DS

= V

DS

= 4.5 V, I

GS

= −4.5 V, I

= 2.5 V, I

GS

= −2.5 V, I

= 3.0 V, I

DS

= −10 V, I

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

C

ISS

N P V

Output Capacitance C

Reverse Transfer Capacitance C

OSS

RSS

N V P V

f = 1 MHz, V

GS

N V P V

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

G(TOT)

G(TH)

GS

GD

N V P V N V P V N V P V N V P V

= 5.0 V, V

GS

= −4.5 V, V

GS

= 5.0 V, V

GS

= −4.5 V, V

GS

= 5.0 V, V

GS

= −4.5 V, V

GS

= 5.0 V, V

GS

= −4.5 V, V

GS

DS

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

t Rise Time t Turn−Off Delay Time t

d(OFF)

Fall Time t Turn−On Delay Time t Rise Time t Turn−Off Delay Time t

d(OFF)

Fall Time t

d(ON)

r

f

d(ON)

r

f

N

V

= 4.5 V, V

GS

I

= 250 mA, R

D

P

V

= −4.5 V, V

GS

I

= −0.5 A, R

D

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

V

SD

RR

N P I N P I N P

V

GS

V

GS

V

GS

= 0 V, T

GS

= 0 V, T

= 0 V, dIS/d

= 25°C

J

= 125°C

J

= 8.0 A/ms

t

= 100 A/ms

t

2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperatures.

I

= 250 mA

D

I

= −250 mA

D

T

= 25°C

J

T

= 125°C

J

I

= 100 mA

D

I

= −250 mA

D

= 10 mA 1.0 1.5

D

= −0.88 A 0.215 0.260

D

= 10 mA 1.5 2.5

D

= −0.71 A 0.345 0.500

D

= 10 mA 0.08

D

= −0.88 A 3.0

D

V

= 5.0 V 20 33

DS

= −20 V 155 225

DS

= 5.0 V 19 32

= 0 V

= 24 V, I

DS

= −10 V, I

= 24 V, I

DS

= −10 V, I

= 24 V, I

DS

= −10 V, I

= 24 V, I

DS

= −10 V, I

DD

G

DS

= −20 V 25 40

DS

= 5.0 V 7.25 12

DS

= −20 V 18 30

DS

= 0.1 A 0.9 1.5

D

= −0.88 A 2.2 3.5

D

= 0.1 A 0.2

D

= −0.88 A 0.2

D

= 0.1 A 0.3

D

= −0.88 A 0.5

D

= 0.1 A 0.2

D

= −0.88 A 0.65

D

= 5.0 V,

= 50 W

= −10 V,

= 20 W

I

= 10 mA 0.65 0.7

S

= −0.48 A −0.8 −1.2

S

I

= 10 mA 0.45

S

= −0.48 A −0.66

S

I

= 10 mA 12.4

S

I

= −0.48 mA TBD

S

30

−20

0.8 1.2 1.5

−0.45

0.5

15 66 56 78

5.8

6.5

13.5

3.5

1.0

V

mV/

°C

mA

V

mV/

°C

W

S

pF

nC

ns

V

ns

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NTJD4158C

TYPICAL N−CHANNEL PERFORMANCE CURVES (T

0.2

0.18

0.16

0.14

0.12

0.1

0.08

0.06

DRAIN CURRENT (AMPS)

0.04

D,

I

0.02

0

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

1.3 VGS = 4.5 V

1.2

1.1

1.0

0.9

0.8

0.7

0.6

0.5

DRAIN−TO−SOURCE RESISTANCE (W)

0.4

0.005

DS(on),

R

2.4 V

0.5

0.055 0.105 0.155

ID, DRAIN CURRENT (AMPS)

VGS = 10 V to 2.8 V

VGS = 2.6 V

0.75

TJ = 125°C

TJ = 25°C

TJ = −55°C

TJ = 25°C

2.2 V

2 V

1.8 V

1.250.25

1 1.5

0.205

= 25°C unless otherwise noted)

J

0.2 VDS = 5 V

0.15

0.1

0.05

DRAIN CURRENT (AMPS)

D,

I

0

1.25 2.251.75 2.5

1

1.5

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

2.5

TJ = 25°C

2.0

1.5

1.0

0.5

DRAIN−TO−SOURCE RESISTANCE (W)

0

DS(on),

R

0.005

0.055 0.105 0.155

I

DRAIN CURRENT (AMPS)

D,

TJ = 125°C

VGS = 2.5 V

VGS = 4 V

25°C

TJ = −55°C

2

0.205

Figure 3. On−Resistance vs. Drain Current and

Temperature

2

ID = 0.01 A

1.75

V

= 4.5 V

GS

1.5

1.25

1

0.75

DRAIN−TO−SOURCE

0.5

DS(on),

R

RESISTANCE (NORMALIZED)

0.25

0

−50 0−25 25

50 125100

75 150

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

1000

100

, LEAKAGE (nA)

DSS

I

10

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3

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

VGS = 0 V

TJ = 150°C

TJ = 125°C

030

5

V

DS,

10

15

DRAIN−TO−SOURCE VOLTAGE (VOLTS)

20

25

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

NTJD4158C

TYPICAL N−CHANNEL PERFORMANCE CURVES (T

50

C

iss

40

C

30

rss

20

C, CAPACITANCE (pF)

10

0

VDS = 0 V VGS = 0 V

5

V

GSVDS

5

010 10

15

TJ = 25°C

C

iss

C

oss

C

rss

20

25

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 7. Capacitance Variation

1000

VDD = 5.0 V I

= 0.25 A

D

= 4.5 V

V

GS

5

4

3

2

1

GATE−TO−SOURCE VOLTAGE (VOLTS)

0

GS,

0 0.2

V

0.1

0.08

= 25°C unless otherwise noted)

J

Q

G

Q

GS

Q

GD

ID = 0.1 A T

= 25°C

J

0.4 1

, TOTAL GATE CHARGE (nC)

Q

G

0.6

0.8

Figure 8. Gate−to−Source Voltage vs. Total

Gate Charge

VGS = 0 V T

= 25°C

J

100

t, TIME (ns)

t

d(off)

t

d(on)

t

f

t

r

10

101

, GATE RESISTANCE (OHMS)

R

G

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

100

0.06

0.04

0.02

, SOURCE CURRENT (AMPS)

S

I

0

0.5 0.60.55

VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

Figure 10. Diode Forward Voltage vs. Current

0.65

0.7 0.75

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4

NTJD4158C

TYPICAL P−CHANNEL PERFORMANCE CURVES (T

1

0.75

0.5

0.25

DRAIN CURRENT (AMPS)

D,

−I

0

−V

DS

Figure 1. On−Region Characteristics

0.3

VGS = −4.5 V

0.25

0.2

VGS = −4.5, −3.5 & −2.5 V

−2 V

0.4

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

1.20.8

TJ = 125°C

TJ = 25°C

−1.75 V

−1.5 V

−1.25 V

−1 V

1.6 2

= 25°C unless otherwise noted)

J

1

VDS ≥ −20 V

0.9

0.8

0.7

0.6

0.5

0.4

0.3

DRAIN CURRENT (AMPS)

0.2

D,

−I

0.1

125°C

25°C

0

0.5

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

0.5

TJ = 25°C

0.4

0.3

0.2

TJ = −55°C

1.512

2.5 3

VGS = −2.5 V

VGS = −4.5 V

3.5

0.15

DRAIN−TO−SOURCE RESISTANCE (W)

0.1 01

DS(on),

R

0.25 0.5 0.75

−ID, DRAIN CURRENT (AMPS)

Figure 3. On−Resistance vs. Drain Current and

2.0 ID = −0.88 A

1.8 V

= −4.5 V

GS

1.6

1.4

TJ = −55°C

Temperature

0.1

DRAIN−TO−SOURCE RESISTANCE (W)

0

0.4 1

DS(on),

R

0.5

0.6

DRAIN CURRENT (AMPS)

−I

D,

0.7 0.9

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

10000

VGS = 0 V

TJ = 150°C

1000

1.2

1.0

0.8

DRAIN−TO−SOURCE

0.6

0.4

DS(on),

R

RESISTANCE (NORMALIZED)

0.2

0

−50 0−25 25

75

50 125100

TJ, JUNCTION TEMPERATURE (°C)

LEAKAGE CURRENT (nA)

DSS,

−I

150

100

10

020

5

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

TJ = 125°C

10

0.8

15

Figure 5. On−Resistance Variation with

Temperature

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Figure 6. Drain−to−Source Leakage Current

vs. Voltage

5

NTJD4158C

TYPICAL P−CHANNEL PERFORMANCE CURVES (T

350

300

250

200

150

100

C, CAPACITANCE (pF)

50

0

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)

100

VDS = 0 V VGS = 0 V

C

iss

C

rss

5

VGSV

Figure 7. Capacitance Variation

010 10

5

DS

TJ = 25°C

C

oss

15

20

= 25°C unless otherwise noted)

J

5

QT

4

3

Q2Q1

2

1

GATE−TO−SOURCE VOLTAGE (VOLTS)

0

GS,

0

−V

0.4

, TOTAL GATE CHARGE (nC)

Q

g

1.20.8

Figure 8. Gate−to−Source Voltage vs. Total

Gate Charge

0.5 VGS = 0 V T

= 25°C

J

0.4

ID = −0.88 A T

= 25°C

J

21.6

t

d(off)

10

t, TIME (ns)

t

d(on)

t

r

t

f

1

101

, GATE RESISTANCE (OHMS)

R

G

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

VDD = −10 V I

= −0.8 A

D

= −4.5 V

V

GS

100

0.3

0.2

0.1

, SOURCE CURRENT (AMPS)

S

−I

0

0.2 0.50.3

, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

−V

SD

0.4

Figure 10. Diode Forward Voltage vs. Current

0.6

0.70.10

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NTJD4158C

PACKAGE DIMENSIONS

SC−88/SC70−6/SOT−363

CASE 419B−02

ISSUE W

D

e

654

H

E

123

−E−

b

A

6 PL

MM

E0.2 (0.008)

A3

C

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.

MILLIMETERS

DIM MIN NOM MAX

A 0.80 0.95 1.10 A1 0.00 0.05 0.10 A3

b 0.10 0.21 0.30

C 0.10 0.14 0.25

D 1.80 2.00 2.20

E 1.15 1.25 1.35

e 0.65 BSC

L 0.10 0.20 0.30

H

STYLE 26:

0.20 REF 0.008 REF

2.00 2.10 2.20

E

PIN 1. SOURCE 1

2. GATE 1

3. DRAIN 2

4. SOURCE 2

5. GATE 2

6. DRAIN 1

INCHES

MIN NOM MAX

0.031 0.037 0.043

0.000 0.002 0.004

0.004 0.008 0.012

0.004 0.005 0.010

0.070 0.078 0.086

0.045 0.049 0.053

0.026 BSC

0.004 0.008 0.012

0.078 0.082 0.086

A1

L

SOLDERING FOOTPRINT*

0.50

0.0197

0.65

0.025

0.65

ǒ

inches

0.025

mm

Ǔ

0.40

0.0157

1.9

0.0748

SCALE 20:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NTJD4158C/D