Datasheet ntjd4152p Datasheet

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NTJD4152P

Trench Small Signal MOSFET

20 V, 0.88 A, Dual P-Channel, ESD Protected SC-88

Features

•Leading Trench Technology for Low R

DS(ON)

Performance

•Small Footprint Package (SC70-6 Equivalent)

•ESD Protected Gate

•Pb-Free Package is Available

Applications

•Load/Power Management

•Charging Circuits

•Load Switching

•Cell Phones, Computing, Digital Cameras, MP3s and PDAs

MAXIMUM RATINGS (T

Parameter

Drain-to-Source Voltage V

Gate-to-Source Voltage V

Continuous Drain Current (Note 1)

Power Dissipation (Note 1)

Continuous Drain Current (Note 2)

Power Dissipation (Note 2)

Pulsed Drain Current

Operating Junction and Storage Temperature TJ,

Continuous Source Current (Body Diode) I

Lead Temperature for Soldering Purposes (1/8” from case for 10 s)

THERMAL RESISTANCE RATINGS (Note 1)

Parameter

Junction-to-Ambient – Steady State

Junction-to-Ambient - t v 5 s

Junction-to-Lead – Steady State

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces), steady state.

2. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces), t v 5 s.

= 25°C unless otherwise stated)

Symbol Value Unit

DSS

Steady

State

Steady

State

t v 5 s

TA = 25°C

TA = 85°C -0.63

TA = 25°C

TA = 85°C 0.141

TA = 25°C

TA = 85°C -0.72

TA = 25°C

TA = 85°C 0.181

t ≤ 10 ms

STG

Symbol Max Unit

-20 V

±12 V

-0.88

0.272

-1.0

0.35

±3.0 A

-55 to 150

-0.48 A

260 °C

°C/W

460

357

226

°C

http://onsemi.com

(BR)DSS

-20 V

Typ ID Max

DS(on)

215 mW @ -4.5 V

345 mW @ -2.5 V

600 mW @ -1.8 V

Top View

-0.88 A

MARKING DIAGRAM &

PIN ASSIGNMENT

D1 G2 S2

SC-88/SOT-363

CASE 419B

STYLE 28

TK = Device Code M = Date Code G = Pb-Free Package

(Note: Microdot may be in either location)

TK MG

S1 G1 D2

ORDERING INFORMATION

Device Package Shipping

NTJD4152PT1 SOT-363 3000 Units/Reel

NTJD4152PT1G

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

SOT-363

(Pb-Free)

3000 Units/Reel

© Semiconductor Components Industries, LLC, 2007

August, 2007 - Rev. 2

1 Publication Order Number:

NTJD4152/D

Page 2

NTJD4152P

ELECTRICAL CHARACTERISTICS (T

Parameter

=25°C unless otherwise stated)

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage

Zero Gate Voltage Drain Current I

Gate-to-Source Leakage Current I

(BR)DSS

DSS

GSS

= 0 V, V

= 0 V, I

= -16 V

= 0 V, V

= -250 mA

= ±4.5 V 0.03 1.0 mA

= ±12 V 6.0

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

Drain-to-Source On Resistance R

Forward Transconductance g

GS(TH)

DS(on)

= VDS, ID = -250 mA

= -4.5 V, I

= -2.5 V, I

VGS = -1.8 V, I

= -10 V, I

= -0.88 A 215 260

= -0.71 A 345 500

= -0.20 A 600 1000

= -0.88 A 3.0 S

CHARGES AND CAPACITANCES

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-to-Source Charge Q

Gate-to-Drain Charge Q

ISS

OSS

RSS

G(TOT)

= 0 V, f = 1.0 MHz,

= -4.5 V, V

= -0.88 A

= -20 V

= -10 V,

SWITCHING CHARACTERISTICS (Note 4)

Turn-On Delay Time

Rise Time t

Turn-Off Delay Time t

Fall Time t

d(ON)

d(OFF)

= -4.5 V, V

= -0.5 A, R

= -10 V,

= 20 W

DRAIN-SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

= -0.48 A

= 0 V,

3. Pulse Test: pulse width ≤ 300ms, duty cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperatures.

-20 V

= 25°C 1.0 mA

= 125°C 1.0 5.0

-0.45 V

155

2.2

0.5

0.65

5.8

6.5

13.5

3.5

= 25°C -0.8 -1.2

= 125°C -0.66

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NTJD4152P

VGS = -4.5, -3.5 & -2.5 V

-2 V

0.75

0.5

0.25

DRAIN CURRENT (AMPS)

-I

0.4

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

-V

Figure 1. On-Region Characteristics

0.3

VGS = -4.5 V

0.25

0.2

TYPICAL PERFORMANCE CURVES (T

1.20.8

TJ = 125°C

TJ = 25°C

-1.75 V

-1.5 V

-1.25 V

-1 V

1.6 2

0.9

0.8

0.7

0.6

0.5

0.4

0.3

DRAIN CURRENT (AMPS)

0.2

-I

0.1

2.5

2.0

1.5

1.0

= 25°C unless otherwise noted)

VDS ≥ -20 V

125°C

25°C

0.5

TJ = -55°C

1.512

-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

TJ = 25°C

2.5 3

VGS = -1.8 V

3.5

0.15

DRAIN-TO-SOURCE RESISTANCE (W)

0.1 01

DS(on),

0.25 0.5 0.75

-ID, DRAIN CURRENT (AMPS)

Figure 3. On-Resistance vs. Drain Current and

2.0 ID = -0.88 A

1.8 V

= -4.5 V

1.6

1.4

TJ = -55°C

Temperature

0.5

DRAIN-TO-SOURCE RESISTANCE (W)

0.4 1

DS(on),

0.5

0.6

DRAIN CURRENT (AMPS)

-I

0.7 0.9

Figure 4. On-Resistance vs. Drain Current and

Gate Voltage

10000

VGS = 0 V

TJ = 150°C

1000

1.2

1.0

0.8

DRAIN-TO-SOURCE

0.6

0.4

DS(on),

RESISTANCE (NORMALIZED)

0.2

-50 0-25 25

50 125100

TJ, JUNCTION TEMPERATURE (°C)

LEAKAGE CURRENT (nA)

-I

150

100

DSS,

020

-VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

TJ = 125°C

VGS = -2.5 V

VGS = -4.5 V

0.8

Figure 5. On-Resistance Variation with

Temperature

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Figure 6. Drain-to-Source Leakage Current

vs. Voltage

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NTJD4152P

TYPICAL PERFORMANCE CURVES (T

350

300

250

200

150

100

C, CAPACITANCE (pF)

GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)

100

VDS = 0 V VGS = 0 V

iss

rss

VGSV

Figure 7. Capacitance Variation

010 10

TJ = 25°C

oss

= 25°C unless otherwise noted)

Q2Q1

GATE-TO-SOURCE VOLTAGE (VOLTS)

-V

GS,

0.4

, TOTAL GATE CHARGE (nC)

1.20.8

Figure 8. Gate-to-Source Voltage vs. Total

Gate Charge

0.5 VGS = 0 V T

= 25°C

0.4

ID = -0.88 A

= 25°C

21.6

d(off)

t, TIME (ns)

d(on)

101

, GATE RESISTANCE (OHMS)

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

VDD = -10 V I

= -0.8 A

= -4.5 V

100

0.3

0.2

0.1

, SOURCE CURRENT (AMPS)

-I

0.2 0.50.3

-V

, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

0.4

Figure 10. Diode Forward Voltage vs. Current

0.6

0.70.10

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NTJD4152P

PACKAGE DIMENSIONS

SC-88/SC70-6/SOT-363

CASE 419B-02

ISSUE W

NOTES:

654

123

-E-

6 PL

E0.2 (0.008)

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 419B-01 OBSOLETE, NEW STANDARD 419B-02.

MILLIMETERS

DIM MIN NOM MAX

A 0.80 0.95 1.10 A1 0.00 0.05 0.10 A3

b 0.10 0.21 0.30

C 0.10 0.14 0.25

D 1.80 2.00 2.20

E 1.15 1.25 1.35

e 0.65 BSC

L 0.10 0.20 0.30

STYLE 26:

PIN 1. SOURCE 1

0.20 REF 0.008 REF

2.00 2.10 2.20

2. GATE 1

3. DRAIN 2

4. SOURCE 2

5. GATE 2

6. DRAIN 1

INCHES

MIN NOM MAX

0.031 0.037 0.043

0.000 0.002 0.004

0.004 0.008 0.012

0.004 0.005 0.010

0.070 0.078 0.086

0.045 0.049 0.053

0.026 BSC

0.004 0.008 0.012

0.078 0.082 0.086

SOLDERING FOOTPRINT*

0.50

0.0197

0.65

0.025

0.65

0.025

0.40

0.0157

1.9

0.0748

SCALE 20:1

inches

*For additional information on our Pb-Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NTJD4152P/D