Datasheet ntjd4105c Datasheet

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NTJD4105C

Small Signal MOSFET

20 V / −8.0 V, Complementary, +0.63 A / −0.775 A, SC−88

Features

• Complementary N and P Channel Device

• Leading −8.0 V Trench for Low R

• ESD Protected Gate − ESD Rating: Class 1

• SC−88 Package for Small Footprint (2 x 2 mm)

• Pb−Free Packages are Available

Applications

• DC−DC Conversion

• Load/Power Switching

• Single or Dual Cell Li−Ion Battery Supplied Devices

• Cell Phones, MP3s, Digital Cameras, PDAs

MAXIMUM RATINGS (T

Parameter Symbol Value Unit

Drain−to−Source Voltage

Gate−to−Source Voltage

Continuous Drain Current

− Steady State (Based on R

Continuous Drain Current

− Steady State (Based on R

Pulsed Drain Current

Power Dissipation − Steady State

(Based on R

Power Dissipation − Steady State

(Based on R

Operating Junction and Storage Temperature TJ,

Source Current (Body Diode)

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

THERMAL RESISTANCE RATINGS (Note 1)

Junction−to−Ambient

– Steady State

Junction−to−Lead (Drain)

– Steady State

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1 oz Cu area = 0.9523 in sq.

)

= 25°C unless otherwise noted)

TA = 25°C

N−Ch

TA = 85°C 0.46

TA = 25°C −0.775

P−Ch

TA = 85°C −0.558

TA = 25°C 0.91

N−Ch

TA = 85°C 0.65

TA = 25°C −1.1

P−Ch

TA = 85°C −0.8

tp ≤ 10 ms

TA = 25°C

TA = 85°C 0.14

TA = 25°C 0.55

TA = 85°C 0.29

Performance

DS(on)

N−Ch

P−Ch −8.0

N−Ch

P−Ch ±8.0

N−Ch

P−Ch −0.775

Typ

Max 460

Typ

Max 226

DSS

STG

±12

0.63

±1.2 A

0.27

−55 to 150

0.63

260 °C

400

194

°C

°C/W

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(BR)DSS

N−Ch 20 V

P−Ch −8.0 V

TYP ID Max

DS(on)

0.29 W @ 4.5 V

0.36 W @ 2.5 V

0.22 W @ −4.5 V

0.32 W @ −2.5 V

0.51 W @ −1.8 V

0.63 A

−0.775 A

SOT−363

SC−88 (6−LEADS)

Top View

MARKING DIAGRAM &

PIN ASSIGNMENT

D1 G2 S2

SC−88/SOT−363

CASE 419B

STYLE 28

TC = Device Code M = Date Code G = Pb−Free Package

(Note: Microdot may be in either location)

M G

S1 G1 D2

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet.

March, 2006 − Rev. 2

1 Publication Order Number:

NTJD4105C/D

Page 2

NTJD4105C

ELECTRICAL CHARACTERISTICS (T

Parameter

Symbol N/P Test Condition Min Ty p Max Units

= 25°C unless otherwise noted)

OFF CHARACTERISTICS

Drain−to−Source

Breakdown Voltage

Drain−to−Source Breakdown

Voltage Temperature Coeffi-

cient

Zero Gate Voltage Drain Current

Gate−to−Source

Leakage Current

(BR)DSS

/ T

DSS

GSS

N P

VGS = 0 V

N 22

P −6.0

N VGS = 0 V, VDS = 16 V P VGS = 0 V, VDS = −6.4 V 1.0 N P VGS = ±8.0 10

VDS = 0 V

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

Gate Threshold

Temperature Coefficient

Drain−to−Source On Resistance

GS(TH)

DS(on)

N P

N −2.1

P 2.2

VGS = V

N VGS = 4.5 V ID = 0.63 A 0.29 0.375 P VGS = −4.5 V, ID = −0.57 A 0.22 0.30 N VGS = 2.5 V, ID = 0.40 A 0.36 0.445 P VGS = −2.5 V, ID = −0.48 A 0.32 0.46 P VGS = −1.8 V, ID = −0.20 A 0.51 0.90

Forward Transconductance g

N VDS = 4.0 V ID = 0.63 A 2.0 P VDS = −4.0 V, ID = −0.57 A 2.0

CHARGES AND CAPACITANCES

Input Capacitance

ISS

N P VDS = −8.0V 160 225

Output Capacitance C

Reverse Transfer Capacitance C

OSS

RSS

N VDS = 20 V 13 22

f = 1 MHz, VGS = 0 V

P VDS = −8.0 V 38 55 N VDS = 20 V 2.8 5.0 P VDS = −8.0 V 28 40

Total Gate Charge Q

G(TOT)

N VGS = 4.5 V, VDS = 10 V, ID = 0.7 A 1.3 3.0 P VGS = −4.5 V, VDS = −5.0 V, ID = −0.6 A 2.2 4.0

Threshold Gate Charge Q

G(TH)

N VGS = 4.5 V, VDS = 10 V, ID = 0.7 A 0.1 P VGS = −4.5 V, VDS = −5.0 V, ID = −0.6 A 0.1

Gate−to−Source Charge Q

N VGS = 4.5 V, VDS = 10 V, ID = 0.7 A 0.2 P VGS = −4.5 V, VDS = −5.0 V, ID = −0.6 A 0.5

Gate−to−Drain Charge Q

N VGS = 4.5 V, VDS = 10 V, ID = 0.7 A 0.4 P VGS = −4.5 V, VDS = −5.0 V, ID = −0.6 A 0.5

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

d(ON)

Rise Time t Turn−Off Delay Time t

d(OFF)

Fall Time t Turn−On Delay Time t

d(ON)

Rise Time t Turn−Off Delay Time t

d(OFF)

Fall Time t

VGS = 4.5 V, VDD = 10 V,

= 0.5 A, RG = 20 W

VGS = −4.5 V, VDD = −4.0 V,

= −0.5 A, RG = 8.0 W

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

VGS = 0 V, TJ = 25°C

P IS = −0.23 A 0.76 1.1 N

VGS = 0 V, TJ = 125°C

P IS = −0.23 A 0.63 N P IS = −0.23 A 0.078

VGS = 0 V,

= 90 A/ms

IS/dt

2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperatures.

ID = 250 mA

ID = −250 mA

TJ = 25 °C

20 27 V

−8.0 −10.5

1.0

VGS = ±12 V 10

ID = 250 mA

ID = −250 mA

0.6 0.92 1.5

−0.45 −0.83 −1.0

VDS = 20 V 33 46

0.083

0.227

0.786

0.506

0.013

0.023

0.050

0.036

IS = 0.23 A 0.76 1.1

IS = 0.23 A 0.63

IS = 0.23 A 0.410

mV/ °C

−mV/ °C

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Page 3

NTJD4105C

TYPICAL N−CHANNEL PERFORMANCE CURVES (T

1.4

1.2

0.8

0.6

0.4

DRAIN CURRENT (AMPS)

0.2

0.7 VGS = 4.5 V

0.6

0.5

0.4

VGS = 4.5 V to 2.2 V

VGS = 2 V

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

TJ = 125°C

= 25°C unless otherwise noted)

1.2

TJ = 25°C

VDS ≥ 10 V

1.8 V

0.8

1.6 V

1.4 V

1.2 V

0.6

0.4

DRAIN CURRENT (AMPS)

0.2

TJ = 125°C

25°C

TJ = −55°C

108

0.4

0.8

1.6

21.2 2.4

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

0.7 VGS = 2.5 V

0.6

0.5

0.4

TJ = 125°C

TJ = 25°C

0.3

0.2

TJ = 25°C

TJ = −55°C

0.1

DRAIN−TO−SOURCE RESISTANCE (W)

0 1.4

DS(on),

0.4 1

0.2 0.6

ID, DRAIN CURRENT (AMPS)

1.20.8

Figure 3. On−Resistance vs. Drain Current and

Temperature

ID = 0.63 A V

1.8

1.6

1.4

1.2

DRAIN−TO−SOURCE

DS(on),

0.8

RESISTANCE (NORMALIZED)

0.6

−50 0−25 25

= 4.5 V

and 2.5 V

50 125100

TJ, JUNCTION TEMPERATURE (°C)

75 150

0.3

TJ = −55°C

0.2

0.1

DRAIN−TO−SOURCE RESISTANCE (W)

0.2 0.6

0 1.4

DS(on),

0.4 1

ID, DRAIN CURRENT (AMPS)

Figure 4. On−Resistance vs. Drain Current and

Temperature

TJ = 25°C

VGS = 0 V

C, CAPACITANCE (pF)

52015

DRAIN−TO−SOURCE VOLTAGE (VOLTS)

iss

oss

rss

100

1.20.8

Figure 5. On−Resistance Variation with

Temperature

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Figure 6. Capacitance Variation

Page 4

NTJD4105C

TYPICAL N−CHANNEL PERFORMANCE CURVES (T

GATE−TO−SOURCE VOLTAGE (VOLTS)

GS,

0 0.6

0.40.2 1.4

Qg, TOTAL GATE CHARGE (nC)

Figure 7. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

G(TOT)

10.8

ID = 0.63 A T

= 25°C

1.2

= 25°C unless otherwise noted)

0.7 VGS = 0 V

0.6

0.5

0.4

0.3

0.2

, SOURCE CURRENT (AMPS)

0.1

TJ = 150°C

TJ = 25°C

0.60.40

, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

Figure 8. Diode Forward Voltage vs. Current

0.8

10.2

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Page 5

NTJD4105C

TYPICAL P−CHANNEL PERFORMANCE CURVES (T

1.4

1.2

0.8

0.6

0.4

DRAIN CURRENT (AMPS)

0.2

−I

0.5 VGS = −4.5 V

0.4

0.3

0.2

VGS = −4.5 V to −2.6 V VGS = −2.2 V

−2 V

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 9. On−Region Characteristics

TJ = 125°C

TJ = 25°C

TJ = −55°C

TJ = 25°C

−1.8 V

−1.6 V

−1.4 V

−1.2 V

1.4 VDS ≥ −10 V

1.2

0.8

0.6

0.4

DRAIN CURRENT (AMPS)

0.2

−I

0.5

VGS = −2.5 V

0.4

0.3

0.2

= 25°C unless otherwise noted)

TJ = 125°C

25°C

TJ = −55°C

0.4

0.8

1.6

21.2 2.4

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 10. Transfer Characteristics

TJ = 125°C

TJ = 25°C

TJ = −55°C

0.1

DRAIN−TO−SOURCE RESISTANCE (W)

0.2 0.6

0 1.4

DS(on),

0.4 1

−ID, DRAIN CURRENT (AMPS)

1.20.8

Figure 11. On−Resistance vs. Drain Current

and Temperature

1.6 ID = −0.7 A V

= −4.5 V

1.4

and −2.5 V

1.2

DRAIN−TO−SOURCE

0.8

DS(on),

RESISTANCE (NORMALIZED)

0.6

−50 0−25 25

75 150

50 125100

TJ, JUNCTION TEMPERATURE (°C)

Figure 13. On−Resistance Variation with

Temperature

0.1

DRAIN−TO−SOURCE RESISTANCE (W)

0.2 0.6

0 1.4

DS(on),

0.4 1

−I

DRAIN CURRENT (AMPS)

Figure 12. On−Resistance vs. Drain Current

and Temperature

300

240

180

120

C, CAPACITANCE (pF)

−60−2

GATE−TO−SOURCE OR DRAIN−TO−SOURCE

−4−8

VOLTAGE (VOLTS)

iss

TJ = 25°C

VGS = 0 V

Figure 14. Capacitance Variation

1.20.8

oss

rss

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Page 6

NTJD4105C

TYPICAL P−CHANNEL PERFORMANCE CURVES (T

GATE−TO−SOURCE VOLTAGE (VOLTS)

GS,

0 1.2

−V

0.80.4 2.4

Qg, TOTAL GATE CHARGE (nC)

Figure 15. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

G(TOT)

ID = −0.6 A T

= 25°C

21.6

= 25°C unless otherwise noted)

0.7 VGS = 0 V

0.6

0.5

0.4

0.3

0.2

, SOURCE CURRENT (AMPS)

0.1

−I

TJ = 150°C

TJ = 25°C

0.60.40

, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

−V

Figure 16. Diode Forward Voltage vs. Current

0.8

10.2

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Page 7

NTJD4105C

ORDERING INFORMATION

Device Package Shipping

NTJD4105CT1 SOT−363 3000 / Tape & Reel

NTJD4105CT1G SOT−363

(Pb−Free)

NTJD4105CT2 SOT−363 3000 / Tape & Reel

NTJD4105CT2G SOT−363

(Pb−Free)

NTJD4105CT4 SOT−363 10,000 / Tape & Reel

NTJD4105CT4G SOT−363

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

3000 / Tape & Reel

10,000 / Tape & Reel

†

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Page 8

NTJD4105C

PACKAGE DIMENSIONS

SC−88/SC70−6/SOT−363

CASE 419B−02

ISSUE W

NOTES:

654

123

−E−

6 PL

E0.2 (0.008)

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.

MILLIMETERS

DIM MIN NOM MAX

A 0.80 0.95 1.10 A1 0.00 0.05 0.10 A3

b 0.10 0.21 0.30

C 0.10 0.14 0.25

D 1.80 2.00 2.20

E 1.15 1.25 1.35

e 0.65 BSC

L 0.10 0.20 0.30

STYLE 26:

PIN 1. SOURCE 1

0.20 REF 0.008 REF

2.00 2.10 2.20

2. GATE 1

3. DRAIN 2

4. SOURCE 2

5. GATE 2

6. DRAIN 1

INCHES

MIN NOM MAX

0.031 0.037 0.043

0.000 0.002 0.004

0.004 0.008 0.012

0.004 0.005 0.010

0.070 0.078 0.086

0.045 0.049 0.053

0.026 BSC

0.004 0.008 0.012

0.078 0.082 0.086

SOLDERING FOOTPRINT*

0.50

0.0197

0.65

0.025

0.65

0.025

0.40

0.0157

1.9

0.0748

SCALE 20:1

inches

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NTJD4105C/D