Datasheet ntjd4001n Datasheet

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Page 1

NTJD4001N

Small Signal MOSFET

30 V, 250 mA, Dual N−Channel, SC−88

Features

• Low Gate Charge for Fast Switching

• Small Footprint − 30% Smaller than TSOP−6

• ESD Protected Gate

• Pb−Free Package is Available

Applications

• Low Side Load Switch

• Li−Ion Battery Supplied Devices − Cell Phones, PDAs, DSC

• Buck Converters

• Level Shifts

(BR)DSS

30 V

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TYP ID Max

DS(on)

1.0 W @ 4.0 V

1.5 W @ 2.5 V

250 mA

SOT−363

SC−88 (6 LEADS)

MAXIMUM RATINGS (T

Parameter Symbol Value Units

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain Current (Note 1)

Power Dissipation (Note 1)

Pulsed Drain Current

Operating Junction and Storage Temperature TJ, T

Source Current (Body Diode) I

Lead Temperature for Soldering Purposes (1/8” from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using min pad size (Cu area = 0.155 in sq [1 oz] including traces).

= 25°C unless otherwise stated)

DSS

Steady

State

Steady

State

TA = 25 °C

TA = 85 °C 180

TA = 25 °C P

t =10 ms

STG

30 V

±20 V

250

272 mW

600 mA

−55 to 150

250 mA

260 °C

°C

Top View

MARKING DIAGRAM &

PIN ASSIGNMENT

D1 G2 S2

SOT−363

CASE 419B

STYLE 26

TE = Device Code M = Date Code G = Pb−Free Package

(Note: Microdot may be in either location)

TE M G

S1 G1 D2

ORDERING INFORMATION

Device Package Shipping

NTJD4001NT1 SOT−363 3000/Tape & Reel

NTJD4001NT1G SOT−363

(Pb−Free)

NTJD4001NT2G SOT−363

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

3000/Tape & Reel

†

July, 2010 − Rev. 5

1 Publication Order Number:

NTJD4001N/D

Page 2

NTJD4001N

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise stated)

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V

Drain−to−Source Breakdown Voltage Temperature Coefficient

(BR)DSS/TJ

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

DSS

GSS

= 0 V, I

= 0 V, V

= 100 mA

= 30 V 1.0

= ±10 V ±1.0

30 V

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

Gate Threshold Temperature Coefficient

Drain−to−Source On Resistance R

Forward Transconductance g

CHARGES AND CAPACITANCES

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

Rise Time tr 23

Turn−Off Delay Time td

Fall Time tf 82

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperatures.

GS(TH)

GS(TH)/TJ

DS(on)

ISS

OSS

RSS

G(TOT)

G(TH)

(ON)

(OFF)

= VDS, ID = 100 mA

= 4.0 V, I

= 2.5 V, I

= 3.0 V, I

= 0 V, f = 1.0 MHz,

= 5.0 V, V

= 4.5 V, V

= 10 mA, R

= 0 V,

= 10 mA

= 0 V, dIS/dt = 8.0 A/ms,

= 10 mA

= 5.0 V

= 0.1 A

0.8 1.2 1.5 V

= 10 mA 1.0 1.5 W

= 10 mA 1.5 2.5

= 10 mA 80 mS

= 24 V,

= 5.0 V, = 50 W

= 25°C 0.65 0.7

= 125°C 0.45

56 mV/ °C

−3.2 mV/ °C

20 33

19 32

7.25 12

0.9 1.3

0.2

0.3

0.2

12.4 ns

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Page 3

NTJD4001N

0.2

0.18

0.16

0.14

VGS = 2.75 V

2.5 V

0.12

0.1

0.08

0.06

DRAIN CURRENT (AMPS)

0.04

0.02

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

1.25 VGS = 10 V

1.0

TYPICAL PERFORMANCE CURVES (T

VGS = 10 V to 3 V

0.8

1.20.4

TJ = 125°C

TJ = 25°C

2.25 V

2 V

1.75 V

1.5 V

0.1

0.08

0.06

0.04

DRAIN CURRENT (AMPS)

0.02

21.6

1.25

1.0

= 25°C unless otherwise noted)

VDS = 5 V

TJ = 125°C

1.2 21.6 2.2

1.4

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

TJ = 25°C

VGS = 4.5 V

25°C

TJ = −55°C

1.8

0.75

TJ = 25°C

0.5

DRAIN−TO−SOURCE RESISTANCE (W)

TJ = −55°C

0.25

DS(on),

0.005

0.055 0.105 0.155

ID, DRAIN CURRENT (AMPS)

Figure 3. On−Resistance vs. Drain Current and

Temperature

ID = 0.01 A

1.8 V

= 10 V

1.6

1.4

1.2

0.8

DRAIN−TO−SOURCE

0.6

0.4

DS(on),

RESISTANCE (NORMALIZED)

0.2

−50 0−25 25

50 125100

75 150

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

0.205

0.75 VGS = 10 V

0.5

DRAIN−TO−SOURCE RESISTANCE (W)

0.25

DS(on),

0.005

0.055 0.105 0.155

ID, DRAIN CURRENT (AMPS)

0.205

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

10000

VGS = 0 V

1000

TJ = 150°C

, LEAKAGE (nA)

100

DSS

TJ = 125°C

030

DS,

DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

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Page 4

NTJD4001N

TYPICAL PERFORMANCE CURVES (T

iss

rss

C, CAPACITANCE (pF)

VDS = 0 V VGS = 0 V

GSVDS

010 10

TJ = 25°C

iss

oss

rss

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 7. Capacitance Variation

0.1 VGS = 0 V T

= 25°C

0.08

= 25°C unless otherwise noted)

GATE−TO−SOURCE VOLTAGE (VOLTS)

GS,

0 0.2

0.4 1

, TOTAL GATE CHARGE (nC)

0.6

Figure 8. Gate−to−Source Voltage vs. Total

Gate Charge

ID = 0.1 A

= 25°C

0.8

1000

100

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

0.06

0.04

0.02

, SOURCE CURRENT (AMPS)

0.5 0.60.55

, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

Figure 9. Diode Forward Voltage vs. Current

0.65

0.7 0.75

0.1

r(t), EFFECTIVE TRANSIENT THERMAL RESPONSE

0.0010.00010.00001

PULSE TIME t,(s)

Figure 10. Thermal Response

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100 10001010.10.010.000001

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NTJD4001N

PACKAGE DIMENSIONS

SC−88/SC70−6/SOT−363

CASE 419B−02

ISSUE W

NOTES:

654

123

−E−

6 PL

E0.2 (0.008)

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.

MILLIMETERS

DIM MIN NOM MAX

A 0.80 0.95 1.10 A1 0.00 0.05 0.10 A3

b 0.10 0.21 0.30

C 0.10 0.14 0.25

D 1.80 2.00 2.20

E 1.15 1.25 1.35

e 0.65 BSC

L 0.10 0.20 0.30

STYLE 26:

PIN 1. SOURCE 1

0.20 REF 0.008 REF

2.00 2.10 2.20

2. GATE 1

3. DRAIN 2

4. SOURCE 2

5. GATE 2

6. DRAIN 1

INCHES

MIN NOM MAX

0.031 0.037 0.043

0.000 0.002 0.004

0.004 0.008 0.012

0.004 0.005 0.010

0.070 0.078 0.086

0.045 0.049 0.053

0.026 BSC

0.004 0.008 0.012

0.078 0.082 0.086

SOLDERING FOOTPRINT*

0.50

0.0197

0.65

0.025

0.65

0.025

0.40

0.0157

1.9

0.0748

SCALE 20:1

inches

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NTJD4001N/D