Datasheet nthd4n02f-d Datasheet

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NTHD4N02F

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Brochure, BRD8011/D.

Power MOSFET and Schottky Diode

20 V, 3.9 A, N−Channel, with 3.7 A Schottky Barrier Diode, ChipFETt

Features

• Leadless SMD Package Featuring a MOSFET and Schottky Diode

• 40% Smaller than TSOP−6 Package with Better Thermals

• Super Low Gate Charge MOSFET

• Ultra Low V

Schottky

• Pb−Free Package is Available

Applications

• Fast Switching, low Gate Charge for DC−to−DC Buck and Boost

Converters

• Li−Ion Battery Applications in Cell Phones, PDAs, DSCs,

and Media Players

• Load Side Switching

MOSFET MAXIMUM RATINGS (T

Parameter Symbol Value Unit

Drain−to−Source Voltage V Gate−to−Source Voltage V Continuous Drain

Current

Pulsed Drain Current Power Dissipation

Continuous Source Current (Body Diode) I Operating Junction and Storage

Temperature Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

Steady

State

t v 5 s T

tp=10 ms

Steady

State

t v 5 s T

SCHOTTKY DIODE MAXIMUM RATINGS

(TJ = 25°C unless otherwise noted)

Parameter Symbol Value Unit

Peak Repetitive Reverse Voltage V DC Blocking Voltage V Average Rectified

Forward Current

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

November, 2005 − Rev. 8

Steady

State

t v 5 s 3.7 A

= 25°C unless otherwise noted)

DSS

TJ, T

RRM

STG

−55 to 150 °C

= 25°C

= 85°C 2.1

= 25°C 3.9

= 25°C

= 85°C 0.36

= 25°C 2.1

= 25°C

20 V

±12 V

2.9

12 A

0.91

2.6 A

260 °C

20 V 20 V

2.2 A

1 Publication Order Number:

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MOSFET

(BR)DSS

20 V

TYP

DS(on)

60 mW @ 4.5 V 80 mW @ 2.5 V

ID MAXV

3.9 A

SCHOTTKY DIODE

VR MAX IF MAXVF TYP

20 V

N−Channel MOSFET

PIN CONNECTIONS

C2 = Specific Device Code M = Month Code G = Pb−Free Package

0.35 V

SCHOTTKY DIODE

ChipFET]

CASE 1206A

STYLE 3

3.7 A

MARKING DIAGRAM

2 3

C2 M

ORDERING INFORMATION

Device Package Shipping

NTHD4N02FT1 ChipFET 3000/Tape & Ree NTHD4N02FT1G

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification

ChipFET

(Pb−Free)

3000/Tape & Ree

NTHD4N02F/D

†

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NTHD4N02F

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Unit

Junction−to−Ambient – Steady State (Note 1) Junction−to−Ambient – t v 5 s

1. Surface Mounted on FR4 Board using 1 in sq. pad size (Cu area = 1.27 in sq. [1 oz] including traces).

110 °C/W

60 °C/W

MOSFET ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

Parameter Symbol Test Conditions Min Typ Max Units

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

DSS

GSS

= 0 V

= 16 V

= 0 V, V

= 0 V, I

= 250 mA

TJ = 25°C 1.0 TJ = 85°C 5.0

= "12 V "100 nA

20 28 V

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage V Drain−to−Source On−Resistance R

Forward Transconductance g

GS(TH)

DS(on)

V V

GS GS

= VDS, I

= 4.5, I = 2.5, I

= 10 V, I

= 250 mA

= 2.9 A 0.058 0.080

= 2.3 A 0.077 0.115

= 2.9 A 6.0 S

0.6 1.2 V

CHARGES AND CAPACITANCES

Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C Total Gate Charge Q Gate−to−Source Charge Q Gate−to−Drain Charge Q

ISS OSS RSS

G(TOT)

GS GD

= 0 V, f = 1.0 MHz,

= 4.5 V, V

= 2.9 A

= 10 V

= 10 V,

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time t Rise Time t Turn−Off Delay Time t Fall Time t

d(ON)

d(OFF)

= 2.9 A, R

= 4.5 V, V

= 16 V,

= 2.5 W

DRAIN−SOURCE DIODE CHARACTERISTICS (Note 2)

Forward Diode Voltage V Reverse Recovery Time t

Charge Time ta 9.0 Discharge Time tb 3.5 Reverse Recovery Charge Q

SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T

= 0 V, I

dIS/dt = 100 A/ms

= 25°C unless otherwise noted)

= 0 V, I

= 2.6 A 0.8 1.15 V

= 2.6 A,

Parameter Symbol Test Conditions Min Typ Max Units

Maximum Instantaneous Forward Voltage V

Maximum Instantaneous Reverse Current I

Non−Repetitive Peak Surge Current I

FSM

Halfwave, Single Pulse, 60 Hz 23 A

= 0.1 A 0.31

= 1.0 A 0.365

= 10 V 0.75

= 20 V 2.5

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

3. Switching characteristics are independent of operating junction temperatures.

180 300

80 130 30 50

2.6 4.0

0.6

0.7

5.0 10

9.0 18 10 20

3.0 6.0

12.5

6.0 nC

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NTHD4N02F

DRAIN−TO−SOURCE RESISTANCE (

)

TYPICAL MOSFET PERFORMANCE CURVES (T

VGS = 5 V to 3 V

TJ = 25°C

= 25°C unless otherwise noted)

VDS ≥ 10 V

VGS = 2.4 V

2.2 V

2 V

1.8 V

DRAIN CURRENT (AMPS)

1 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

0.15

56632

1.6 V

1.4 V

910

ID = 2.9 A TJ = 25°C

DRAIN CURRENT (AMPS)

0.5

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

0.1 TJ = 25°C

TC = −55°C

25°C

100°C

21.5 2.5

VGS = 2.5 V

0.1

0.07 VGS = 4.5 V

0.05

DRAIN−TO−SOURCE RESISTANCE (W)

DS(on),

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

0.04

DS(on),

ID, DRAIN CURRENT (AMPS)

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

1.7 ID = 2.9 A VGS = 4.5 V

100

VGS = 0 V

1.5

1.3

TJ = 100°C

1.1

DRAIN−TO−SOURCE

0.9

DS(on),

RESISTANCE (NORMALIZED)

0.7

−50 0−25 25

50 125100

75 150

TJ, JUNCTION TEMPERATURE (°C)

, LEAKAGE (nA)

DSS

24 8

610 1814

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 5. On−Resistance Variation with

Temperature

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Figure 6. Drain−to−Source Leakage Current

vs. Voltage

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NTHD4N02F

TYPICAL MOSFET PERFORMANCE CURVES (T

400

VDS = 0 V VGS = 0 V

ISS

TJ = 25°C

300

RSS

200

100

C, CAPACITANCE (pF)

OSS

VGSV

510 10

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)

Figure 7. Capacitance Variation

100

VDD = 16 V ID = 2.9 A VGS = 4.5 V

= 25°C unless otherwise noted)

4.5

3.5 3

2.5 2

1.5 1

0.5

GATE−TO−SOURCE VOLTAGE (V)

GS,

0 0.5 1 1.5 2 2.5 3

QG, TOTAL GATE CHARGE (nC)

Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

VGS = 0 V TJ = 25°C

ID = 2.9 A TJ = 25°C

DRAIN−TO−SOURCE VOLTAGE (V)

DS,

d(off)

t, TIME (ns)

d(on)

1 10 100

RG, GATE RESISTANCE (W)

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

, SOURCE CURRENT (AMPS)

0.3

0.45

0.75

0.9

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 10. Diode Forward Voltage vs. Current

1.20.6 1.05

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NTHD4N02F

, INSTANTANEOUS FORWARD

REVERSE CURRENT (AMPS)

TYPICAL SCHOTTKY PERFORMANCE CURVES (T

TJ = 150°C

CURRENT (AMPS)

0.1

0.00 0.20 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

Figure 11. Typical Forward Voltage Figure 12. Maximum Forward Voltage

100E−3

TJ = 150°C

10E−3

TJ = 100°C

TJ = 25°C

TJ = −55°C

0.40

0.60 0.80

CURRENT (AMPS)

, INSTANTANEOUS FORWARD

0.1

0.00 0.20 VF, MAXIMUM INSTANTANEOUS FORWARD

100E−3

10E−3

= 25°C unless otherwise noted)

TJ = 150°C

TJ = 25°C

0.40 0.60 0.8

VOLTAGE (VOLTS)

TJ = 150°C

TJ = 100°C

100E−6

10E−6

AVERAGE FORWARD CURRENT (AMPS)

1E−3

3.5

2.5

1.5

0.5 0

TJ = 25°C

VR, REVERSE VOLTAGE (VOLTS)

Figure 13. Typical Reverse Current

square wave

Ipk/Io = p Ipk/Io = 5

Ipk/Io = 10 Ipk/Io = 20

65 125105

45 145

TL, LEAD TEMPERATURE (°C)

85 165

freq = 20 kHz

1E−3

100E−6

MAXIMUM REVERSE CURRENT (AMPS)

10E−6

VR, REVERSE VOLTAGE (VOLTS)

Figure 14. Maximum Reverse Current

1.4

1.2

0.8

0.6

0.4

0.2

, AVERAGE POWER DISSIPATION (WATTS)

Ipk/Io = 10

Ipk/Io = 20

0.5 1.5 2.5

IO, AVERAGE FORWARD CURRENT (AMPS)

TJ = 25°C

Ipk/Io = p

Ipk/Io = 5

square wave dc

Figure 15. Current Derating

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Figure 16. Forward Power Dissipation

Page 6

NTHD4N02F

PACKAGE DIMENSIONS

ChipFET]

CASE 1206A−03

ISSUE G

8765

1234

STYLE 3:

PIN 1. A

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE.

4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL

8765

1234

2. A

3. S

4. G

5. D

6. D

7. C

8. C

AND VERTICAL SHALL NOT EXCEED 0.08 MM.

5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS.

6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD SURFACE.

DIMAMIN NOM MAX MIN

b 0.25 0.30 0.35 0.010 c 0.10 0.15 0.20 0.004 D 2.95 3.05 3.10 0.116 E 1.55 1.65 1.70 0.061 e 0.65 BSC

e1 0.55 BSC

L 0.28 0.35 0.42 0.011

MILLIMETERS

1.00 1.05 1.10 0.039

1.80 1.90 2.00 0.071 0.075 0.079

5° NOM

INCHES

NOM MAX

0.041 0.043

0.012 0.014

0.006 0.008

0.120 0.122

0.065 0.067

0.025 BSC

0.022 BSC

0.014 0.017

5° NOM

0.05 (0.002)

SOLDERING FOOTPRINT*

0.457

0.018

2.032

0.08

0.635

0.025

2.032

0.08

0.711

0.028

1.092

0.043

0.178

0.007

0.457

0.018

0.66

0.026

0.711

0.028

SCALE 20:1

inches

0.66

0.026

0.254

0.010

SCALE 20:1

inches

Basic Style 3

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ChipFET is a trademark of Vishay Siliconix.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NTHD4N02F/D