Datasheet nthd4401p-d Datasheet

NTHD4401P

l

T

l

s

Power MOSFET

−20 V, −3.0 A, Dual P−Channel, ChipFETt

Features

• Low R

• Leadless ChipFET Package 40% Smaller Footprint than TSOP−6

• ChipFET Package with Excellent Thermal Capabilities where Heat

Transfer is Required

• Pb−Free Package is Available

Applications

• Charge Control in Battery Chargers

• Optimized for Battery and Load Management Applications in

Portable Equipment

• MP3 Players, Cell Phones, Digital Cameras, PDAs

• Buck and Boost DC−DC Converters

and Fast Switching Speed in a ChipFET Package

DS(on)

G

1

(BR)DSS

−20 V

http://onsemi.com

R

TYP

DS(on)

130 mW @ −4.5 V
200 mW @ −2.5 V

S

1

G

ID MAXV

−3.0 A

S

2

2

MAXIMUM RATINGS (T

Drain−to−Source Voltage V
Gate−to−Source Voltage V
Continuous Drain

Current (Note 1)

Power Dissipation
(Note 1)

Pulsed Drain Current
Operating Junction and Storage Temperature TJ, T

Source Current (Body Diode) I
Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

= 25°C unless otherwise noted)

J

Rating Symbol Value Unit

stg

−20 V

"12 V

−2.1

1.1

−9.0 A

−55 to
150

−2.5 A
260 °C

A

W

°C

DSS

GS

Steady

State
t v 5 s TA = 25°C −3.0
Steady

State
t v 5 s TA = 25°C 2.1

TA = 25°C
TA = 85°C −1.5

TA = 25°C
TA = 85°C 0.6

tp = 10 ms

I

D

P

D

I

DM

S

T

L

THERMAL RESISTANCE RATINGS

Rating Symbol Value Unit

Junction−to−Ambient − Steady State (Note 1) R
Junction−to−Ambient − t v 5 s 60

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.

1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq
[1 oz] including traces).

© Semiconductor Components Industries, LLC, 2005

November, 2005 − Rev. 4

q

JA

°C/W

110

1 Publication Order Number:

D

1

P−Channel MOSFET

PIN

CONNECTIONS

81

D

1

7

D

1

6

D

2

5

D

2

2
3
4

C4 = Specific Device Code
M = Month Code
G = Pb−Free Package

P−Channel MOSFE

ChipFET

CASE 1206A

STYLE 2

MARKING
DIAGRAM

S

1

1

2

G

1

S

2

G

2

G

3
4

C4 M

D

2

8
7
6
5

ORDERING INFORMATION

Device Package Shipping

NTHD4401PT1 ChipFET 3000/Tape & Ree
NTHD4401PT1G ChipFET

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

3000/Tape & Ree

NTHD4401P/D

†

NTHD4401P

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

J

Characteristic Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V
Drain−to−Source Breakdown Voltage Tem-

perature Coefficient

V

(Br)DSS/TJ

Zero Gate Voltage Drain Current I

(Br)DSS

DSS

VGS = 0 V, ID = −250 mA

VGS = 0 V TJ = 25°C −1.0 mA

VDS = −16 V TJ = 85°C −5.0

Gate−to−Source Leakage Current I

GSS

VDS = 0 V, VGS = "12 V "100 nA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage V
Gate Threshold Temperature Coefficient V
Drain−to−Source On Resistance R

GS(th)

GS(th)/TJ

DS(on)

VGS = VDS, ID = −250 mA

VGS = −4.5 V, ID = −2.1 A
VGS = −2.5 V, ID = −1.7 A
VGS = −1.8 V, ID = −1.0 A

Forward Transconductance g

FS

VDS = −10 V, ID = −2.1 A 5.0 S

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q

iss

oss

rss

G(TOT)

G(TH)

GS
GD

VGS = 0 V, f = 1.0 MHz,

VDS = −10 V

VGS = −4.5 V, VDS = −10 V,

ID = −2.1 A

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time t
Rise Time t
Turn−Off Delay Time t
Fall Time t

d(on)

r

d(off)

f

VGS = −4.5 V, VDD = −16 V,

ID = −2.1 A, RG = 2.5 W

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage V

SD

VGS = 0 V

IS = −2.5 A
Reverse Recovery Time t
Charge Time t
Discharge Time t
Reverse Recovery Charge Q

rr
a
b

RR

VGS = 0 V, dIS/dt = 90 A/ms,

IS = −2.1 A

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

3. Switching characteristics are independent of operating junction temperatures.

−20 −23 V

−8.0 mV/°C

−0.6 −0.75 −1.2 V

2.65 mV/°C

0.130

0.200

0.155

0.240

0.34

185 300

95 150
30 50

3.0 6.0

0.2

0.5

0.9

7.0 12
13 25
33 50
27 40

−0.85 −1.15

32
10
22
15 nC

W

pF

nC

ns

V

ns

http://onsemi.com

2

NTHD4401P

4

−2.2 V

3

2

1

DRAIN CURRENT (AMPS)

D,

−I
0

0

1

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

0.5

0.4

0.3

0.2

TYPICAL PERFORMANCE CURVES (T

VGS = −6 V to −3 V
VGS = −2.4 V

4

−2 V

−1.8 V

−1.6 V

−1.4 V

−1.2 V

5

TJ = 25°C

632

78

ID = −2.1 A
TJ = 25°C

= 25°C unless otherwise noted)

J

4

VDS ≥ −10 V

3

2

1

DRAIN CURRENT (AMPS)

D,

−I

TC = −55°C

25°C

0

0.5

1

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

0.25
TJ = 25°C

0.225

0.2

0.175

0.15

VGS = −2.5 V

100°C

21.5 2.5

3

0.1

DRAIN−TO−SOURCE RESISTANCE (W)

0

16

DS(on),

R

24

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

35

Figure 3. On−Resistance vs. Gate−to−Source

0.125

DRAIN−TO−SOURCE RESISTANCE (W)

0.1

0.5 4.5

DS(on),

R

1.5 2.5 3.5

−ID, DRAIN CURRENT (AMPS)

Figure 4. On−Resistance vs. Drain Current and

Voltage

VGS = −4.5 V

Gate Voltage

1.6
ID = −2.1 A
VGS = −4.5 V

1.4

ID = −1.0 A
VGS = −1.8 V

1.2

1.2

1

DRAIN−TO−SOURCE

0.8

DS(on),

R

RESISTANCE (NORMALIZED)

0.6

−50 0−25 25

Figure 5. On−Resistance Variation with

50 125100

75 150

TJ, JUNCTION TEMPERATURE (°C)

Temperature

1

DRAIN−TO−SOURCE

DS(on),

R

RESISTANCE (NORMALIZED)

0.8

−50 −25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)

Figure 6. On−Resistance Variation with

Temperature

http://onsemi.com

3

NTHD4401P

S)

−V

GATE−TO−SOURCE VOLTAGE (VOLTS)

0

−I

, LEAKAGE (A)

TYPICAL PERFORMANCE CURVES (T

10000

VGS = 0 V

TJ = 150°C

1000

DSS

100

TJ = 100°C

10

24 8

610 1814

12

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 7. Drain−to−Source Leakage Current

vs. Voltage

6

−V

DS

5

4

3

2

Q2Q1

1

0

GS,

02

1

Qg, TOTAL GATE CHARGE (nC)

QT

−V

GS

ID = −2.1 A
TJ = 25°C

1.50.5 3.5

32.5

= 25°C unless otherwise noted)

J

600

500

VDS = 0 V VGS = 0 V

C

iss

TJ = 25°C

400

C

rss

300

200

C, CAPACITANCE (pF)

100

0

2016

50

−VGS−V

510 10

DS

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLT

Figure 8. Capacitance Variation

12

10

8

6

4

2

0

t, TIME (ns)

DRAIN−TO−SOURCE VOLTAGE (VOLTS)

DS,

−V

100

10

t

d(off)

t

d(on)

t

f

t

r

VDD = −16 V
ID = −2.1 A
VGS = −4.5 V

1

101

RG, GATE RESISTANCE (OHMS)

C

oss

15

20

10

Figure 9. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

2.5
VGS = 0 V
TJ = 25°C

2

1.5

1

0.5

, SOURCE CURRENT (AMPS)

S

−I
0

−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

Figure 11. Diode Forward Voltage vs. Current

http://onsemi.com

4

Figure 10. Resistive Switching Time Variation

vs. Gate Resistance

0.70.50.3

0.9

NTHD4401P

1.0

D = 0.5

0.2

0.1

0.1

0.05

0.0175 Ω 0.0710 Ω 0.2706 Ω 0.5776 Ω 0.7086 Ω

0.02

0.01

r(t), NORMALIZED EFFECTIVE

SINGLE PULSE

TRANSIENT THERMAL RESISTANCE

0.01

1.0E−03 1.0E−02 1.0E−01 1.0E+00 1.0E+01 1.0E+02 1.0E+03

Chip

t, TIME (s)

Figure 12. Thermal Response

SOLDERING FOOTPRINT*

Normalized to θJA at 10s.

107.55 F1.7891 F0.3074 F0.0854 F0.0154 F

Ambient

0.457

0.018

0.66

0.026

2.032

0.08

0.711

0.028

SCALE 20:1

0.635

0.025

mm

ǒ

inches

0.635

0.025

0.457

0.018

Ǔ

0.66

0.026

2.032

0.08

Figure 13. Basic Figure 14. Style 2

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

0.254

0.010

SCALE 20:1

1.092

0.043

mm

ǒ

inches

0.178

0.007

Ǔ

BASIC PAD PATTERNS

The basic pad layout with dimensions is shown in
Figure 13. This is sufficient for low power dissipation
MOSFET applications, but power semiconductor
performance requires a greater copper pad area, particularly
for the drain leads.

The minimum recommended pad pattern shown in
Figure 14 improves the thermal area of the drain
connections (pins 5, 6, 7, 8) while remaining within the

http://onsemi.com

confines of the basic footprint. The drain copper area is

0.0019 sq. in. (or 1.22 sq. mm). This will assist the power
dissipation path away from the device (through the copper
leadframe) and into the board and exterior chassis (if
applicable) for the single device. The addition of a further
copper area and/or the addition of vias to other board layers
will enhance the performance still further.

5

NTHD4401P

PACKAGE DIMENSIONS

ChipFET]

CASE 1206A−03

ISSUE G

e1

D

8765

H

E

1234

b

e

q

L

E

c

A

0.05 (0.002)

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE.

4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL

8765

1234

AND VERTICAL SHALL NOT EXCEED 0.08 MM.

5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS.

6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD
SURFACE.

DIMAMIN NOM MAX MIN

b 0.25 0.30 0.35 0.010
c 0.10 0.15 0.20 0.004

D 2.95 3.05 3.10 0.116

E 1.55 1.65 1.70 0.061
e 0.65 BSC

e1 0.55 BSC

L 0.28 0.35 0.42 0.011

H

E

q

STYLE 2:

PIN 1. SOURCE 1

MILLIMETERS

1.00 1.05 1.10 0.039

1.80 1.90 2.00 0.071 0.075 0.079

5° NOM

2. GATE 1

3. SOURCE 2

4. GATE 2

5. DRAIN 2

6. DRAIN 2

7. DRAIN 1

8. DRAIN 1

INCHES

NOM MAX

0.041 0.043

0.012 0.014

0.006 0.008

0.120 0.122

0.065 0.067

0.025 BSC

0.022 BSC

0.014 0.017

5° NOM

ChipFET is a trademark of Vishay Siliconix.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA

Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center

2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051

Phone: 81−3−5773−3850

http://onsemi.com

ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder

For additional information, please contact your
local Sales Representative.

NTHD4401P/D

6