Datasheet nthd3133pf Datasheet

NTHD3133PF

Power MOSFET and Schottky Diode

-20 V, FETKYt, P-Channel, -4.4 A, with

3.7 A Schottky Barrier Diode, ChipFETt

Features

•Leadless SMD Package Featuring a MOSFET and Schottky Diode

•40% Smaller than TSOP-6 Package

•Leadless SMD Package Provides Great Thermal Characteristics

•Independent Pinout to each Device to Ease Circuit Design

•Trench P-Channel for Low On Resistance

•Ultra Low V

Schottky

F

•These are Pb-Free Devices

Applications

•Li-Ion Battery Charging

•High Side DC-DC Conversion Circuits

•High Side Drive for Small Brushless DC Motors

•Power Management in Portable, Battery Powered Products

MOSFET MAXIMUM RATINGS (T

Parameter

Drain-to-Source Voltage V

Gate-to-Source Voltage V

Continuous Drain

Current (Note 1)

Power Dissipation

(Note 1)

Pulsed Drain Current

Operating Junction and Storage Temperature TJ, T

Source Current (Body Diode) I

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

Steady

State

t ≤ 5 s T

Steady

State

t ≤ 5 s 2.1

t

SCHOTTKY DIODE MAXIMUM RATINGS

(TJ = 25°C unless otherwise noted)

Parameter

Peak Repetitive Reverse Voltage V

DC Blocking Voltage V

Average Rectified

Forward Current

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).

Steady

State

t ≤ 5 s 3.7 A

= 25°C unless otherwise noted)

J

Symbol Value Units

DSS

GS

T

= 25°C

J

T

= 85°C -2.3

J

= 25°C -4.4

J

T

= 25°C

J

= 10 ms

p

T

= 25°C

J

I

D

P

D

I

DM

S

T

L

Symbol Value Units

RRM

R

I

F

STG

-20 V

±8.0 V

-3.2

1.1

-13 A

-55 to 150

2.5 A

260 °C

20 V

2.2 V

A

W

°C

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MOSFET

(BR)DSS

-20 V

TYP

R

DS(on)

64 mW @ -4.5 V

85 mW @ -2.5 V

MAXV

I

D

-4.4 A

SCHOTTKY DIODE

VR MAX IF MAXVF TYP

G

3.7 A

A

C

DA M

8

7

6

5

20 V

S

G

P-Channel MOSFET

D

8

1

CONNECTIONS

1

A

2

A

S

3

G

8

7

6

54

DA = Specific Device Code M = Month Code G = Pb-Free Package

0.35 V

C

D

Schottky Diode

ChipFET

CASE 1206A

STYLE 3

MARKING DIAGRAM

1

2

3

4

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet.

© Semiconductor Components Industries, LLC, 2007

October, 2007 - Rev. 0

1 Publication Order Number:

NTHD3133PF/D

NTHD3133PF

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Units

Junction-to-Ambient – Steady State (Note 2)

Junction-to-Ambient – t ≤ 10 s (Note 2)

2. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).

R

q

JA

R

q

JA

113 °C/W

60 °C/W

MOSFET ELECTRICAL CHARACTERISTICS (T

Parameter

Symbol Test Conditions Min Typ Max Units

= 25°C unless otherwise noted)

J

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage

Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate-to-Source Leakage Current I

V

(BR)DSS

V

(BR)DSS/TJ

DSS

GSS

V

DS

V

GS

= -16 V,

GS

DS

= 0 V, I

= 0 V

= 0 V, V

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

Gate Threshold Temperature Coefficient V

Drain-to-Source On-Resistance R

Forward Transconductance g

V

GS(TH)

GS(TH)/TJ

DS(on)

FS

V

GS

V

GS

V

GS

V

GS

V

DS

= VDS, I

= -4.5, I

= -2.5, I

= -1.8, I

= -10 V, I

CHARGES AND CAPACITANCES

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate-to-Source Charge Q

Gate-to-Drain Charge Q

C

ISS

OSS

RSS

G(TOT)

G(TH)

GS

GD

V

= 0 V, f = 1.0 MHz,

GS

V

DS

V

= -4.5 V, V

GS

I

D

= -10 V

= -3.2 A

SWITCHING CHARACTERISTICS (Note 4)

Turn-On Delay Time

Rise Time t

Turn-Off Delay Time t

Fall Time t

t

d(ON)

r

d(OFF)

f

V

GS

I

D

= -4.5 V, V

= -3.2 A, R

DRAIN-SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

V

SD

RR

a

b

RR

V

GS

SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T

Parameter

Maximum Instantaneous Forward Voltage

Maximum Instantaneous Reverse Current

Non-Repetitive Peak Surge Current I

Symbol Test Conditions Min Typ Max Units

V

F

I

R

FSM

Halfwave, Single Pulse 60 Hz 23 A

= 0 V, I

= -2.5 A TJ = 25°C -0.8 -1.2 V

S

V

= 0 V, I

GS

/dt = 100 A/ms

dI

S

= 25°C unless otherwise noted)

J

I

= 0.1 A 0.31

F

I

= 1.0 A 0.365

F

V

= 10 V 0.75

R

V

= 20 V 2.5

R

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

= -250 mA

D

-20 V

-15 mV/°C

TJ = 25°C -1.0

TJ = 125°C -5.0

= ±8.0 V ±100 nA

GS

= -250 mA

D

-0.45 -1.5 V

2.7 mV/°C

= -3.2 A 64 80

D

= -2.2 A 85 11 0

D

= -1.0 A 120 170

D

= -2.9 A 8.0 S

D

680

100

70

7.4

= -10 V,

DS

0.6

1.4

2.5

5.8

= -10 V,

DD

= 2.4 W

G

11.7

16

12.4

13.5

= -1.0 A ,

S

9.5

4.0

6.5 nC

mA

mW

pF

nC

ns

V

mA

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2

NTHD3133PF

TYPICAL P-CHANNEL PERFORMANCE CURVES

(TJ = 25°C unless otherwise noted)

9

8

7

VGS = -5 V to -3.6 V

VGS = -3 V

-2.6 V

6

5

4

DRAIN CURRENT (AMPS)

2

D,

-I 1

0

1

0

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

-V

DS

Figure 1. On-Region Characteristics

0.2

0.175

0.15

0.125

TJ = 25°C

-2.4 V

9

VDS ≥ -10 V

8

7

-2.2 V

6

5

-2 V

4

3

-1.8 V

-1.6 V

-1.4 V

4

53632

78

910

DRAIN CURRENT (AMPS)

2

D,

-I 1

0

0.5

0 3.5

TC = -55°C

25°C

1

100°C

21.5 2.5

3

-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

ID = -3.2 A T

= 25°C

J

0.2

0.175

0.15

0.125

TJ = 25°C

VGS = -2.5 V

0.1

0.075

DRAIN-TO-SOURCE RESISTANCE (W)

0.05 16

DS(on),

R

24

-V

, GATE-TO-SOURCE VOLTAGE (VOLTS)

GS

35

Figure 3. On-Resistance vs. Gate-to-Source

Voltage

1.4 ID = -3.2 A V

1.3

1.2

= -4.5 V

GS

0.1

0.075

DRAIN-TO-SOURCE RESISTANCE (W)

0.05 2345

DS(on),

R

-ID, DRAIN CURRENT (AMPS)

VGS = -4.5 V

Figure 4. On-Resistance vs. Drain Current and

Gate Voltage

1000

VGS = 0 V

TJ = 100°C

1.1 100

1

DRAIN-TO-SOURCE

0.9

DS(on),

R

RESISTANCE (NORMALIZED)

0.8

0.7

-50 0-25 25

75 150

50 125100

-TJ, JUNCTION TEMPERATURE (°C)

, LEAKAGE (A)

DSS

-I

10

24 8

-VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

610 1814

678

12

2016

Figure 5. On-Resistance Variation with

Temperature

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Figure 6. Drain-to-Source Leakage Current

vs. Voltage

3

1500

1200

NTHD3133PF

TYPICAL P-CHANNEL PERFORMANCE CURVES

(TJ = 25°C unless otherwise noted)

VGS = 0 V

C

ISS

TJ = 25°C

Q

T

4

-V

DS

-V

5

10

8

GS

900

VDS = 0 V

600

C

RSS

C, CAPACITANCE (pF)

300

C

OSS

0

50

-V

GS

-V

DS

510

15

20

GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 7. Capacitance Variation

1000

VDS = -10 V I

= -3.2 A

D

= -4.5 V

V

GS

100

t, TIME (ns)

10

t

d(off)

t

f

t

r

t

d(on)

1

1 10 100

RG, GATE RESISTANCE (OHMS)

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

3

Q

GS

2

Q

GD

1

GATE-TO-SOURCE VOLTAGE (V)

GS,

0

-V 02468

ID = -3.2 A

= 25°C

T

J

6

4

2

0

DRAIN-TO-SOURCE VOLTAGE (V)

-V

Qg, TOTAL GATE CHARGE (nC)

Figure 8. Gate-to-Source and

Drain-to-Source Voltage vs. Total Charge

5

VGS = 0 V T

= 25°C

J

4

3

2

1

, SOURCE CURRENT (AMPS)

S

-I

0

-V

, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

SD

0.90.60.3

1.2

Figure 10. Diode Forward Voltage vs. Current

DS,

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4

NTHD3133PF

10

TJ = 150°C

1

CURRENT (AMPS)

, INSTANTANEOUS FORWARD

F

I

0.1

0.00 0.20

, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

V

F

Figure 11. Typical Forward Voltage Figure 12. Maximum Forward Voltage

100E-3

10E-3

TYPICAL SCHOTTKY PERFORMANCE CURVES (T

10

1

CURRENT (AMPS)

, INSTANTANEOUS FORWARD

F

I

0.1

0.00 0.20

V

100E-3

10E-3

TJ = 150°C

TJ = 100°C

TJ = 25°C

TJ = -55°C

0.40

0.60 0.80

= 25°C unless otherwise noted)

J

TJ = 150°C

TJ = 25°C

0.40 0.60 0.80

, MAXIMUM INSTANTANEOUS FORWARD

F

VOLTAGE (VOLTS)

TJ = 150°C

TJ = 100°C

1E-3

100E-6 REVERSE CURRENT (AMPS)

R,

I

TJ = 25°C

10E-6

0

VR, REVERSE VOLTAGE (VOLTS)

Figure 13. Typical Reverse Current

3.5

3

2.5

2

1.5

1

0.5

dc

square wave

Ipk/Io = p

Ipk/Io = 5

Ipk/Io = 10

Ipk/Io = 20

10

freq = 20 kHz

1E-3

100E-6

MAXIMUM REVERSE CURRENT (AMPS)

R,

10E-6

I

20

VR, REVERSE VOLTAGE (VOLTS)

Figure 14. Maximum Reverse Current

1.4

1.2

1

0.8

0.6

0.4

0.2

Ipk/Io = 20

Ipk/Io = 5

Ipk/Io = 10

TJ = 25°C

Ipk/Io = p

10

square wave dc

200

0

AVERAGE FORWARD CURRENT (AMPS)

25

45 145

O,

I

65 125105

TL, LEAD TEMPERATURE (°C)

Figure 15. Current Derating

85 165

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0

, AVERAGE POWER DISSIPATION (WATTS)

FO

P

0.5 1.5 2.5

01

2

IO, AVERAGE FORWARD CURRENT (AMPS)

3.53

Figure 16. Forward Power Dissipation

5

NTHD3133PF

DEVICE ORDERING INFORMATION

Device Package Shipping

NTHD3133PFT1G ChipFET

(Pb-Free)

NTHD3133PFT3G ChipFET

(Pb-Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

3000 / Tape & Reel

10000 / Tape & Reel

†

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6

e1

NTHD3133PF

PACKAGE DIMENSIONS

ChipFET

CASE 1206A-03

D

8765

H

E

1234

b

e

q

L

E

c

ISSUE G

A

0.05 (0.002)

SOLDERING FOOTPRINT*

2.032

0.08

8765

1234

STYLE 3:

PIN 1. A

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE.

4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL AND VERTICAL SHALL NOT EXCEED 0.08 MM.

5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS.

6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD SURFACE.

DIMAMIN NOM MAX MIN

b 0.25 0.30 0.35 0.010 c 0.10 0.15 0.20 0.004 D 2.95 3.05 3.10 0.116

2. A

E 1.55 1.65 1.70 0.061

3. S

e 0.65 BSC

4. G

e1 0.55 BSC

5. D

L 0.28 0.35 0.42 0.011

6. D

H

E

7. C

q

8. C

MILLIMETERS

1.00 1.05 1.10 0.039

1.80 1.90 2.00 0.071 0.075 0.079

5° NOM

INCHES

NOM MAX

0.041 0.043

0.012 0.014

0.006 0.008

0.120 0.122

0.065 0.067

0.025 BSC

0.022 BSC

0.014 0.017

5° NOM

0.711

0.028

1.092

0.043

0.178

0.007

0.457

0.018

0.254

0.66

0.026

0.010

SCALE 20:1

mm

ǒ

inches

Ǔ

*For additional information on our Pb-Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ChipFET is a trademark of Vishay Siliconix. FETKY is a registered trademark of International Rectifier Corporation.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NTDH3133PF/D