Datasheet ntgs4141n Datasheet

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NTGS4141N

Power MOSFET

30 V, 7.0 A, Single N−Channel, TSOP−6

Features

• Low R

• Low Gate Charge

• Pb−Free Package is Available

DS(on)

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Applications

• Load Switch

• Notebook PC

• Desktop PC

MAXIMUM RATINGS (T

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain Current (Note 1)

Power Dissipation (Note 1)

Continuous Drain Current (Note 2)

Power Dissipation (Note 2)

Pulsed Drain Current

Operating Junction and Storage Temperature TJ,

Source Current (Body Diode) I

Single Pulse Drain−to−Source Avalanche Energy (V

= 30 V, IL = 10.4 A, VGS = 10 V,

L = 1.0 mH, R

Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

= 25 W)

THERMAL RESISTANCE RATINGS

Junction−to−Ambient – Steady State (Note 1) R

Junction−to−Ambient – t ≤ 10 s (Note 1) R

Junction−to−Ambient – Steady State (Note 2) R

1. Surface−mounted on FR4 board using 1 inch sq pad size (Cu area = 1.127 in sq [1 oz] including traces).

2. Surface−mounted on FR4 board using the minimum recommended pad size (Cu area = 0.0773 in sq).

= 25°C unless otherwise noted)

Rating

Steady

State

t ≤ 10 s T

Steady

State

t ≤ 10 s 2.0

Steady

State

Rating Symbol Max Unit

= 25°C

= 85°C 3.6

= 25°C 7.0

= 25°C P

= 25°C

= 85°C 2.5

= 25°C P

= 10 ms

Symbol Value Unit

DSS

STG

EAS 54 mJ

30 V

±20 V

5.0

1.0

3.5

0.5 W

21 A

−55 to 150

2.0 A

260 °C

125

62.5

248

°C

°C/W

(BR)DSS

30 V

TYP

DS(on)

21.5 mW @ 10 V

30 mW @ 4.5 V

ID MAXV

7.0 A

N−Channel

Drain

1256

Gate

Source

MARKING

TSOP−6

CASE 318G

S4 = Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location)

STYLE 1

DIAGRAM

S4 MG

PIN ASSIGNMENT

Drain

Source 4

3 Gate

ORDERING INFORMATION

Device Package Shipping

NTGS4141NT1 TSOP−6 3000/Tape & Reel

NTGS4141NT1G

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

TSOP−6

(Pb−Free)

3000/Tape & Reel

†

February, 2011 − Rev. 2

1 Publication Order Number:

NTGS4141N/D

Page 2

NTGS4141N

ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25°C unless otherwise noted)

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Drain−to−Source Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

(BR)DSS/TJ

DSS

GSS

V V

GS DS

= 0 V, = 24 V

= 0 V, I

= 0 V, V

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

Negative Threshold Temperature Coefficient V

Drain−to−Source On Resistance R

Forward Transconductance g

GS(TH)

GS(TH)/TJ

DS(on)

= VDS, I

= 10 V, I

= 4.5 V, I

= 10 V, I

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

Gate Resistance R

ISS

OSS

RSS

G(TOT)

G(TH)

G(TOT)

G(TH)

= 0 V, f = 1.0 MHz,

= 10 V, V

= 7.0 A

= 4.5 V, V

= 7.0 A

= 24 V

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

Fall Time t

d(ON)

d(OFF)

= 7.0 A, R

= 10 V, V

DRAIN − SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

= 0 V,

= 2.0 A

VGS = 0 V

/dt = 100 A/ms, IS = 2.0 A

3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

= 250 mA

30 V

18.4 mV/°C

TJ = 25°C 1.0 mA

TJ = 125°C 10

= ±20 V ±100 nA

= 250 mA

1.0 3.0 V

5.7 mV/°C

= 7.0 A 21.5 25 mW

= 6.0 A 30 35

= 7.0 A 30 S

560

115

= 15 V,

0.85

1.9

3.0

6.0

= 15 V,

0.8

1.85

3.0

2.8

6.0

= 24 V,

= 3.0 W

4.0

TJ = 25°C 0.78 1.0

TJ = 125°C 0.63

9.0

6.0

8.0 nC

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Page 3

NTGS4141N

TYPICAL PERFORMANCE CURVES

10 V

6 V

TJ = 25°C

3.5 V

VDS ≥ 10 V

4.5 V

DRAIN CURRENT (AMPS)

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

0.05

0.04

3 V

2.6 V

104

TJ = 25°C I

= 7 A

DRAIN CURRENT (AMPS)

25°C

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

0.05 TJ = 25°C

0.04

125°C

TJ = −55°C

0.03

VGS = 4.5 V

0.02

VGS = 10 V

0.02

DRAIN−TO−SOURCE RESISTANCE (W)

0.01 010

DS(on),

GATE−TO−SOURCE VOLTAGE (VOLTS)

GS,

468

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

0.01

DRAIN−TO−SOURCE RESISTANCE (W)

DS(on),

DRAIN CURRENT (AMPS)

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

2.0 ID = 7 A V

= 10 V

1.5

1.0

DRAIN−TO−SOURCE

0.5

DS(on),

RESISTANCE (NORMALIZED)

−50 0−25 25

Figure 5. On−Resistance Variation with

50 125100

TJ, JUNCTION TEMPERATURE (°C)

Temperature

10000

1000

100

LEAKAGE CURRENT (nA)

DSS,

150

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VGS = 0 V

TJ = 150°C

TJ = 125°C

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

25 30

Page 4

NTGS4141N

TYPICAL PERFORMANCE CURVES

1200

1000

VDS = 0 V VGS = 0 V

iss

TJ = 25°C

800

600

400

C, CAPACITANCE (pF)

200

10 0 5 105

rss

15 20 25

iss

oss

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 7. Capacitance Variation

1000

t, TIME (ns)

100

VDD = 24 V I

= 7 A

= 10 V

d(off)

d(on)

, GATE−TO−SOURCE VOLTAGE (V)

, TOTAL GATE CHARGE (nC)

Figure 8. Gate−To−Source and

Drain−To −Source Voltage vs. Total Charge

VGS = 0 V T

= 25°C

ID = 7 A V

= 15 V

= 25°C

121024 68

1 10 100

RG, GATE RESISTANCE (OHMS)

Figure 9. Resistive Switching Time

Variation vs. Gate Resistance

100

0 V ≤ VGS ≤ 20 V SINGLE PULSE TC = 25°C

0.1

, DRAIN CURRENT (AMPS)

0.01

0.1 1 100 V

LIMIT

DS(on)

THERMAL LIMIT PACKAGE LIMIT

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

10 ms

100 ms

1 ms

10 ms

, SOURCE CURRENT (AMPS)

0.3 0.70.50.1

0.2

, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

0.40

Figure 10. Diode Forward Voltage vs. Current

AVALANCHE ENERGY (mJ)

EAS, SINGLE PULSE DRAIN−TO−SOURCE

TJ, STARTING JUNCTION TEMPERATURE (°C)

10025

Figure 12. Maximum Avalanche Energy vs.

Starting Junction Temperature

0.80.6

ID = 10.4 A

12575

0.9

150

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Page 5

1000

, TRANSIENT THERMAL RESPONSE (°C/W)

thja(t)

100

0.1

0.01

D = 0.5

0.2

0.1

0.05

0.02

0.01

Single Pulse

0.00001 0.0001 0.0010.000001

NTGS4141N

TYPICAL PERFORMANCE CURVES

0.01 0.1 1 10 100 1000

t, PULSE TIME (s)

Figure 13. Thermal Response

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Page 6

NTGS4141N

PACKAGE DIMENSIONS

TSOP−6

CASE 318G−02

ISSUE T

0.05 (0.002)

456

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.

4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS.

DIMAMIN NOM MAX MIN

A1 0.01 0.06 0.10 0.001

b 0.25 0.38 0.50 0.010 c 0.10 0.18 0.26 0.004 D 2.90 3.00 3.10 0.114

E 1.30 1.50 1.70 0.051 e 0.85 0.95 1.05 0.034 L 0.20 0.40 0.60 0.008

STYLE 1:

PIN 1. DRAIN

MILLIMETERS

0.90 1.00 1.10 0.035

2.50 2.75 3.00 0.099 0.108 0.118 0° 10° 0° 10°

− −

2. DRAIN

3. GATE

4. SOURCE

5. DRAIN

6. DRAIN

INCHES

NOM MAX

0.039 0.043

0.002 0.004

0.014 0.020

0.007 0.010

0.118 0.122

0.059 0.067

0.037 0.041

0.016 0.024

SOLDERING FOOTPRINT*

2.4

0.094

0.95

0.037

1.9

0.075

0.95

0.037

0.7

0.028

1.0

0.039

SCALE 10:1

inches

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NTGS4141N/D