Datasheet ntgs3441p-d Datasheet

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Page 1

NTGS3441P

Power MOSFET

−20 V, −3.16 A, Single P−Channel TSOP−6

Features

• Ultra Low R

• Low Gate Charge to Improve Switching Losses

• TSOP−6 Surface Mount Package

• This is a Pb−Free Device

Applications

• High Side Switch in DC−DC Converters

• Battery Management

to Improve Conduction Loss

DS(on)

(BR)DSS

−20 V

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TYP ID MAX

DS(ON)

91 mW @ 4.5 V

188 mW @ 2.5 V

−3.16 A144 mW @ 2.7 V

MAXIMUM RATINGS (T

Parameter Symbol Value Unit

Drain−to−Source Voltage V Gate−to−Source Voltage V Continuous Drain

Current (Note 1)

Power Dissipation (Note 1)

Continuous Drain Current (Note 2)

Power Dissipation (Note 2)

Pulsed Drain Current Operating Junction and Storage Temperature TJ,

Source Current (Body Diode) I Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)

2. Surface−mounted on FR4 board using the minimum recommended pad size (Cu area = 0.0751 in sq)

= 25°C unless otherwise stated)

−20 V ±12 V

−2.5

0.98

−1.8 A

0.51 W

−13 A

−55 to 150

−1.5 A 260 °C

DSS

Steady

State

t = 10 s TA = 25°C −3.16

Steady

State

t = 10 s 1.60

Steady

State

tp = 10 ms

TA = 25°C TA = 85°C −1.8

TA = 25°C P

TA = 25°C I TA = 85°C −1.3 TA = 25°C P

STG

°C

P−Channel

1256

MARKING DIAGRAM

TSOP−6

CASE 318G

PT = Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location)

STYLE 1

S3 MG

PIN ASSIGNMENT

Source

DrainDrain

321

GateDrain

Drain

ORDERING INFORMATION

Device Package Shipping

†

January, 2006 − Rev. 0

NTGS3441PT1G TSOP−6

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

1 Publication Order Number:

3000 / Tape & Ree

NTGS3441P/D

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NTGS3441P

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction−to−Ambient – Steady State (Note 3) Junction−to−Ambient – t = 10 s (Note 3) Junction−to−Ambient – Steady State (Note 4)

3. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)

4. Surface−mounted on FR4 board using the minimum recommended pad size (Cu area = TBD in sq)

128

244

°C/W

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V Drain−to−Source Breakdown Voltage

Temperature Coefficient

(BR)DSS/TJ

Zero Gate Voltage Drain Current I

(BR)DSS

DSS

VGS = 0 V, ID = −250 mA

VGS = 0 V,

VDS = −20 V

Gate−to−Source Leakage Current I

GSS

VDS = 0 V, VGS = ±12 V ±100 nA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage V Negative Threshold Temperature Coefficient V Drain−to−Source On Resistance R

GS(TH)

GS(TH)/TJ

DS(on)

VGS = VDS, ID = −250 mA

VGS = 4.5 V, ID = −3.0 A VGS = 2.7 V, ID = −1.5 A VGS = 2.5 V, ID = −1.5 A

Forward Transconductance g

VDS = −15 V, ID =−1.5 A 4.0 S

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C Total Gate Charge Q Threshold Gate Charge Q Gate−to−Source Charge Q Gate−to−Drain Charge Q

ISS OSS RSS

G(TOT)

G(TH)

VGS = 0 V, f = 1 MHz, VDS = −15 V

VGS = 4.5 V, VDS = −10 V; ID = −3.0 A

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time t Rise Time T Turn−Off Delay Time t Fall Time T

d(ON)

d(OFF)

VGS = 4.5 V, VDD = −10 V,

ID = −1.5 A, RG = 4.7 W

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage V

Reverse Recovery Time t Charge Time T Discharge Time T Reverse Recovery Charge Q

a b

VGS = 0 V, IS = −3.0 A

VGS = 0 V, dIS/dt = 100 A/ms,

5. Switching characteristics are independent of operating junction temperatures

6. Pulse Test: pulse width = 300 ms, duty cycle = 2%

IS = −3.0 A

−20 V 16 mV/ °C

TJ = 25°C −1

TJ = 125°C −10

0.6 1.6 V

3.2 mV/°C 91 110

144 165 188

345 150

3.25 6.0

0.3

0.6

1.4

7.0 12 14 25 13 25

4.0 8.0

TJ = 25°C 0.8 1.2

TJ = 125°C 0.7

25 10 15 15 nC

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NTGS3441P

DRAIN CURRENT (AMPS)

−I 0

19753

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

0.24

0.18

TYPICAL PERFORMANCE CURVES (T

−4 V

VGS = −10 V to −4.5 V

−3.5 V

TJ = 25°C

−3 V

−2.5 V

−2 V

−1.9 V

ID = −1.5 A TJ = 25°C

1064

= 25°C unless otherwise noted)

VDS ≥ −10 V

DRAIN CURRENT (AMPS)

−I 0

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

0.30

0.27

0.24

0.21

VGS = −2.5 V

TJ = 25°C

TJ = −55°C

TJ = 100°C

TJ = 25°C

0.12

DRAIN−TO−SOURCE RESISTANCE (W)

0.06

DS(on),

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

1.5 ID = −1.5 A

1.4

VGS = −4.5 V

1.3

1.2

1.1

DRAIN−TO−SOURCE

0.9

DS(on),

RESISTANCE (NORMALIZED)

0.8

0.18

0.15

0.12

0.09

DRAIN−TO−SOURCE RESISTANCE (W)

VGS = −4.5 V

0.06

0.5 8.5

DS(on),

−ID, DRAIN CURRENT (AMPS)

5.5

4.53.52.51.5

9.57.56.5

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

1000

VGS = 0 V

100

TJ = 125°C

LEAKAGE (nA)

DSS,

−I

TJ = 100°C

0.7

−50 0−25 25 TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

50 125100

Temperature

75 150

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015

2010

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

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NTGS3441P

600

400

200

C, CAPACITANCE (pF)

100

VDD = −10 V ID = −1.5 A VGS = −4.5 V

TYPICAL PERFORMANCE CURVES (T

VGS = 0 V TJ = 25°C

8124016

GATE−TO−SOURCE OR DRAIN−TO−SOURCE

VOLTAGE (VOLTS)

Figure 7. Capacitance Variation

= 25°C unless otherwise noted)

iss

oss

, GATE−TO−SOURCE VOLTAGE (VOLTS)

−V

0.5

1.5 3

rss

ID = −3.0 A TJ = 25°C

2.5

−V

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

3.521

QG, TOTAL GATE CHARGE (nC)

Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

VGS = 0 V TJ = 25°C

d(off)

t, TIME (ns)

d(on)

1 10 100

RG, GATE RESISTANCE (OHMS)

Figure 9. Gate Threshold Voltage Variation

with Temperature

SOURCE CURRENT (AMPS)

−I 0

0.4

−V

0.6

SOURCE−TO−DRAIN VOLTAGE (VOLTS)

SD,

Figure 10. Diode Forward Voltage vs. Current

10.8

1.2

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0.05 (0.002)

NTGS3441P

PACKAGE DIMENSIONS

TSOP−6

CASE 318G−02

ISSUE N

NOTES:

1. DIMENSIONING AND TOLERANCING PER

456

ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.

4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS.

DIM MIN MAX MIN MAX

A 0.1142 0.12202.90 3.10 B 0.0512 0.06691.30 1.70 C 0.0354 0.04330.90 1.10 D 0.0098 0.01970.25 0.50 G 0.0335 0.04130.85 1.05 H 0.0005 0.00400.013 0.100 J 0.0040 0.01020.10 0.26 K 0.0079 0.02360.20 0.60 L 0.0493 0.06101.25 1.55 M 0 10 0 10

____

S 0.0985 0.11812.50 3.00

STYLE 1:

PIN 1. DRAIN

2. DRAIN

3. GATE

4. SOURCE

5. DRAIN

6. DRAIN

INCHESMILLIMETERS

SOLDERING FOOTPRINT*

2.4

0.094

0.95

0.037

1.9

0.075

0.95

0.037

0.7

0.028

1.0

0.039

SCALE 10:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

inches

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NTGS3441P

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NTGS3441P/D