Datasheet ntgs3136p-d Datasheet

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Page 1

NTGS3136P

Power MOSFET

-20 V, -5.8 A, Single P-Channel, TSOP-6

Features

•Low R

•1.8 V Gate Rating

•Fast Switching

•This is a Pb-Free Device

Applications

•Optimized for Battery and Load Management Applications in

Portable Equipment

•High Side Load Switch

•Switching Circuits for Game Consoles, Camera Phone, etc.

MAXIMUM RATINGS (T

Drain-to-Source Voltage V

Gate-to-Source Voltage V

Continuous Drain Current (Note 1)

Power Dissipation (Note 1)

Continuous Drain Current (Note 2)

Power Dissipation (Note 2)

Pulsed Drain Current

Operating Junction and Storage Temperature TJ,

Lead Temperature for Soldering Purposes (1/8” from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces)

2. Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = 0.0775 in sq).

in TSOP-6 Package

DS(on)

= 25°C unless otherwise stated)

Parameter Symbol Value Unit

DSS

STG

Steady

State

t v 5 s TA = 25°C -5.8

Steady

State

t v 5 s 1.6

Steady

State

tp = 10 ms

TA = 25°C

TA = 85°C -3.6

TA = 25°C

TA = 85°C -2.7

TA = 25°C

-20 V

$8.0 V

-5.1

1.25

-3.7

0.7 W

-20 A

-55 to 150

260 °C

°C

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(BR)DSS

-20 V

DS(ON)

25 mW @ -4.5 V

32 mW @ -2.5 V

41 mW @ -1.8 V

P-Channel

1256

TYP ID MAX

MARKING DIAGRAM

TSOP-6

CASE 318G

SD = Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location)

STYLE 1

PIN ASSIGNMENT

Source

DrainDrain

321

GateDrain

Drain

ORDERING INFORMATION

Device Package Shipping

-5.1 A

-4.5 A

-2.5 A

SD MG

†

© Semiconductor Components Industries, LLC, 2007

August, 2007 - Rev. 0

NTGS3136PT1G TSOP-6

(Pb-Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

1 Publication Order Number:

3000 / Tape & Reel

NTGS3136P/D

Page 2

NTGS3136P

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction-to-Ambient – Steady State (Note 3)

Junction-to-Ambient – t = 5 s (Note 3)

Junction-to-Ambient – Steady State (Note 4)

3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces)

4. Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = 0.0775 in sq).

100

185

°C/W

ELECTRICAL CHARACTERISTICS (T

Parameter

= 25°C unless otherwise specified)

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage

Drain-to-Source Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current I

(BR)DSS

(BR)DSS/TJ

DSS

VGS = 0 V, ID = -250 mA

ID = -250 mA, Reference 25°C

VGS = 0 V,

VDS = -20 V

Gate-to-Source Leakage Current I

GSS

VDS = 0 V, VGS = ±8.0 V $0.1

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage V

Negative Threshold Temperature Coefficient V

Drain-to-Source On Resistance R

GS(TH)

GS(TH)/TJ

DS(on)

VGS = VDS, ID = -250 mA

VGS = -4.5 V, ID = -5.1 A

VGS = -2.5 V, ID = -4.5 A

VGS = -1.8 V, ID = -2.5 A

Forward Transconductance g

VDS = -5.0 V, ID = -5.1 A 22 S

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate-to-Source Charge Q

Gate-to-Drain Charge Q

Gate Resistance R

ISS

OSS

RSS

G(TOT)

G(TH)

VGS = 0 V, f = 1 MHz, VDS = -10 V

VGS = -4.5 V, VDS = -10 V;

SWITCHING CHARACTERISTICS (Note 6)

Turn-On Delay Time t

Rise Time T

Turn-Of f Delay Time t

Fall Time T

d(ON)

d(OFF)

VGS = *4.5 V, VDD = -10 V,

ID = -1.0 A, RG = 6.0 W

DRAIN-SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage V

Reverse Recovery Time t

VGS = 0 V, IS = -1.7 A

VGS = 0 V, dIS/dt = 100 A/ms,

5. Pulse Test: pulse width v 300 ms, duty cycle v 2%

6. Switching characteristics are independent of operating junction temperatures

ID = -5.1 A

IS = -1.7 A

-20 V

-13 mV/°C

TJ = 25°C -1.0

TJ = 85°C -5.0

-0.4 -1.0 V

3 mV/°C

25 33

32 40

41 51

1901

274

175

18 29

0.7

2.4

4.3

7.6

9 19

99 160

48 79

TJ = 25°C -0.7 -1.2

TJ = 125°C -0.6

37 60 ns

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Page 3

NTGS3136P

TYPICAL PERFORMANCE CURVES (T

8.0

DRAIN CURRENT (A)

4.0

-I

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

-VDS, DRAIN-TO-SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

0.14

0.12

0.10

0.08

0.06

0.04

0.02

DRAIN-T O-SOURCE RESISTANCE (W)

1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

DS(on),

-VGS, GATE-T O-SOURCE VOLTAGE (V)

-2 V

VGS = -4.5 V

-1.8 V

-2.5 V

-1.5 V

TJ = 125°C

TJ = 25°C

ID = -5.1 A

= 25°C unless otherwise noted)

VDS = -5 V

DRAIN CURRENT (A)

-I

0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5

TJ = 25°C

TJ = 125°C

TJ = -55°C

-VGS, GATE-T O-SOURCE VOLTAGE (V)

0.10 TJ = 25°C

0.09

0.08

0.07

0.06

0.05

0.04

0.03

0.02

0.01

DRAIN-T O-SOURCE RESISTANCE (W)

-2.5 V

VGS = -4.5 V

0 4.0 8.0 12 16 20

DS(on),

-ID, DRAIN CURRENT (A)

-1.8 V

-2 V

Figure 3. On-Resistance vs. Gate-to-Source

Voltage

1.5

ID = -4.5 A

1.4 VGS = -5.1 V

1.3

1.2

1.1

1.0

DRAIN-T O-SOURCE

0.9

DS(on),

0.8

RESISTANCE (NORMALIZED)

0.7

-50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On-Resistance Variation with

Temperature

2800 2600 2400 2200 2000 1800 1600 1400 1200 1000

800

C, CAPACITANCE (pF)

600 400 200

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Figure 4. On-Resistance vs. Drain Current and

Gate Voltage

VGS = 0 V TJ = 25°C

iss

oss

rss

f = 1 MHz

024681012

DRAIN-T O-SOURCE VOLTAGE (V)

Figure 6. Capacitance Variation

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NTGS3136P

TYPICAL PERFORMANCE CURVES (T

-V

, GATE-T O-SOURCE VOLTAGE (V)

-V

0 2 4 6 8 10 12 14 16 18

Drain-to-Source Voltage vs. Total Charge

0.8

0.7

0.6

(V)

0.5

GS(th)

-V

0.4

0.3

0.2

-50 0-25 25

-V

VDS = -10 V I

= -5.1 A

= 25°C

QG, TOTAL GATE CHARGE (nC)

Figure 7. Gate-to-Source and

ID = -250 mA

50 125100

75 150

TJ, JUNCTION TEMPERATURE (°C)

Figure 9. Threshold Voltage Figure 10. Single Pulse Maximum Power

= 25°C unless otherwise noted)

100

-V

, DRAIN-TO-SOURCE VOLTAGE (V)

VGS = 0 V

, SOURCE CURRENT (A)

-I

1.0 0 0.2 0.4 0.6 0.8 1.0 1.2

POWER (W)

1E-3 1E-2 1E-1 1 1E+1 1E+2 1E+3

TJ = 150°C

TJ = 25°C

-VSD, SOURCE-TO-DRAIN VOLTAGE (V)

Figure 8. Diode Forward Voltage vs. Current

SINGLE PULSE TIME (s)

Dissipation

100

100 ms

1 ms

VGS = -8.0 V

10 ms

SINGLE PULSE TC = 25°C

0.1

, DRAIN CURRENT (A)

-I

0.01

LIMIT

DS(on)

Thermal Limit Package Limit

0.1 1 10 100

-VDS, DRAIN-TO-SOURCE VOLTAGE (V)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

0.1

RESPONSE (NORMALIZED)

, EFFECTIVE TRANSIENT THERMAL

(t)

0.01

1E-04 1E-03 1E-02 1E-01 1 1E+01 1E+02 1E+03

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Duty Cycle = 0.5

0.2

0.1

0.05

0.01

0.02

t, TIME (s)

Figure 12. FET Thermal Response

Page 5

0.05 (0.002)

456

SOLDERING FOOTPRINT*

2.4

0.094

NTGS3136P

PACKAGE DIMENSIONS

TSOP-6

CASE 318G-02

ISSUE S

NOTES:

1. DIMENSIONING AND TOLERANCING PER

2. CONTROLLING DIMENSION: MILLIMETER.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

4. DIMENSIONS A AND B DO NOT INCLUDE

STYLE 1:

ANSI Y14.5M, 1982.

FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.

MOLD FLASH, PROTRUSIONS, OR GATE BURRS.

DIMAMIN NOM MAX MIN

A1 0.01 0.06 0.10 0.001

b 0.25 0.38 0.50 0.010 c 0.10 0.18 0.26 0.004

D 2.90 3.00 3.10 0.114

E 1.30 1.50 1.70 0.051 e 0.85 0.95 1.05 0.034 L 0.20 0.40 0.60 0.008

PIN 1. DRAIN

MILLIMETERS

0.90 1.00 1.10 0.035

2.50 2.75 3.00 0.099 0.108 0.118 0° 10° 0° 10°

- -

2. DRAIN

3. GATE

4. SOURCE

5. DRAIN

6. DRAIN

INCHES

NOM MAX

0.039 0.043

0.002 0.004

0.014 0.020

0.007 0.010

0.118 0.122

0.059 0.067

0.037 0.041

0.016 0.024

0.95

0.037

1.9

0.075

0.95

0.037

0.7

0.028

1.0

0.039

SCALE 10:1

inches

*For additional information on our Pb-Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

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NTGS3136P/D