Datasheet ntgs3130n Datasheet

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NTGS3130N

Power MOSFET 20 V, 5.6 A Single N-Channel, TSOP-6

Features

•Leading Edge Trench Technology for Low On Resistance

•Low Gate Charge for Fast Switching

•Small Size (3 x 2.75 mm) TSOP-6 Package

•This is a Pb-Free Device

Applications

•DC-DC Converters

•Lithium Ion Battery Applications

•Load/Power Switching

MAXIMUM RATINGS (T

Drain-to-Source Voltage V

Gate-to-Source Voltage V

Continuous Drain Current

(Note 1)

Power Dissipation

(Note 1)

Continuous Drain Current

(Note 2)

Power Dissipation

(Note 2)

Pulsed Drain Current tP ≤ 10 s I

Operating and Storage Temperature Range TJ, T

Source Current (Body Diode) I

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Unit

Junction-to-Ambient - Steady State (Note 1)

Junction-to-Ambient - t ≤ 10 s (Note 1) 90

Junction-to-Ambient - Steady State (Note 2) 200

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)

2. Surface-mounted on FR4 board using the minimum recommended pad size

= 25°C unless otherwise noted)

Rating Symbol Value Unit

stg

20 V

±8 V

5.6

1.1

4.2

0.6 W

19 A

-55 to 150

1.0 A

260 °C

110

°C

°C/W

DSS

Steady

State

t ≤ 10 s TA = 25°C 6.2

Steady

State

t ≤ 10 s 1.4

Steady

State

TA = 25°C

TA = 85°C 4.1

TA = 25°C P

TA = 25°C

TA = 85°C 3.0

TA = 25°C P

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(BR)DSS

20 V

mAX

DS(on)

24 mW @ 4.5 V

32 mW @ 2.5 V

ID Max

5.6 A

4.9 A

N-Channel

1256

Drain

Gate

Source

MARKING DIAGRAM &

PIN ASSIGNMENT

Drain6Drain

TSOP-6

CASE 318G

STYLE 1

Drain2Drain

S9 = Specific Device Code M = Date Code* G = Pb-Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

S9 MG

Source 4

3 Gate

ORDERING INFORMATION

Device Package Shipping

NTGS3130NT1G TSOP-6

(Pb-Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

3000/Tape & Reel

†

© Semiconductor Components Industries, LLC, 2007

May, 2007 - Rev. 0

1 Publication Order Number:

NTGS3130N/D

Page 2

NTGS3130N

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

Characteristic Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage V

Drain-to-Source Breakdown Voltage Temperature Coefficient

(BR)DSS/TJ

Zero Gate Voltage Drain Current I

Gate-to-Source Leakage Current I

(BR)DSS

DSS

GSS

VGS = 0 V; ID = 250 mA

VGS = 0 V; VDS = 16 V,

TJ = 25°C

VDS = 0, VGS = ±8 V 100 nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage V

Negative Temperature Coefficient V

GS(TH)

GS(TH)/TJ

VGS = V

VGS = 4.5 V, ID = 5.6 A 19 24

Drain-to-Source On-Resistance R

Forward Transconductance g

DS(on)

VGS = 2.5 V, ID = 4.9 A 25 32

VDS = 10 V, ID = 5.6 A 8.2 S

CHARGES, CAPACITANCE, & GATE RESISTANCE

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate-to-Source Charge Q

Gate-to-Drain Charge Q

Total Gate Charge Q

Threshold Gate Charge Q

Gate-to-Source Charge Q

Gate-to-Drain Charge Q

ISS

OSS

RSS

ISS

OSS

RSS

G(TOT)

G(TH)

G(TOT)

G(TH)

VGS = 0 V, f = 1 MHz,

VDS = 16 V

VGS = 0 V, f = 1 MHz,

VDS = 10 V

VGS = 4.5 V

VDS = 16 V

ID = 5.6 A

VGS = 4.5 V VDS = 5.0 V

ID = 6.2 A

SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4)

Turn-On Delay Time t

Rise Time t

Turn-Of f Delay Time t

Fall Time t

d(ON)

d(OFF)

VGS = 4.5 V,

RG = 3 W

DRAIN-SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage V

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

VGS = 0 V,

IS = 1.0 A

VGS = 0 Vdc,

dISD/dt = 100 A/ms,

IS = 1.0 A

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperature.

20 V

9.8 mV/°C

ID = 250 mA

DS,

0.4 0.6 1.4 V

3.4 mV/°C

935

169

104

965

198

110

13.2 20.3

0.60

1.5

4.2

11.8 18.0

0.6

1.4

2.7

6.3 12.6

= 16 V,

ID = 1 A,

7.3 13.5

21.7 35.1

9.7 17.6

TJ = 25°C 0.7 1.2 V

20.4

8.1

11.6

8.8 nC

1.0

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NTGS3130N

TYPICAL CHARACTERISTICS

, DRAIN CURRENT (A)

VGS = 4.5 V to 2.5 V

2.0 V

VDS, DRAIN-TO-SOURCE VOLTAGE (V) VGS, GATE-T O-SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

0.10

0.08

0.06

TJ = 125°C

0.04

0.02

, DRAIN-TO-SOURCE RESISTANCE (W)

DS(on)

TJ = 25°C

32.521.51

VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A)

Figure 3. On-Resistance vs. Gate-to-Source

Voltage

0.04

0.03 VGS = 2.5 V

1.8 V

1.5 V

, DRAIN CURRENT (A) I

TJ = 25°C

4.543.535

ID = 5.6 A

65.52.521.510.50

, DRAIN-TO-SOURCE RESISTANCE (W)

54.543.5 R

VDS ≥ 5 V

0.5 2.25

0.10

TJ = 25°C

0.08

0.06

0.04

0.02

0.00

DS(on)

TJ = 125°C

TJ = 25°C

TJ = -55°C

VGS = 1.8 V

VGS = 2 V

VGS = 2.5 V

3 V

1412108642

VGS = 4.5 V

Figure 4. On-Resistance vs. Drain Current and

Gate Voltage

1400

1200

1000

800

iss

VGS = 0 V TJ = 25°C

f = 1 MHz

2.01.751.51.251.00.75

201816

0.02

, DRAIN-TO-SOURCE RESISTANCE (W)

0.01

DS(on)

VGS = 4.5 V

1251007550250-25-50

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On-Resistance Variation with

Temperature

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150

C, CAPACITANCE (pF)

600

400

200

oss

rss

DRAIN-T O-SOURCE VOLTAGE (V)

20121086420

181614

Figure 6. Capacitance Variation

Page 4

NTGS3130N

TYPICAL CHARACTERISTICS

VDS = 5 V

VDS = 16 V

, GATE-TO-SOURCE VOLTAGE (V)

ID = 5.6 A TJ = 25°C

QG, TOTAL GATE CHARGE (nC)

Figure 7. Gate-To-Source and Drain-To-Source

Voltage vs. Total Charge

100

VGS = 8 V SINGLE PULSE TC = 25°C

0.1

, DRAIN CURRENT (A)

DS(on)

LIMIT

THERMAL LIMIT

0.01

0.1 1 100

PACKAGE LIMIT

VDS, DRAIN-TO-SOURCE VOLTAGE (V)

Figure 9. Maximum Rated Forward Biased

Safe Operating Area

100 ms

1 ms

10 ms

, DRAIN-TO-SOURCE VOLTAGE (V)

VGS = 0 V

125°C

1.0

25°C

, SOURCE CURRENT (A)

14121086420

TJ = -55°C

0.1

0.2

1.00.90.80.70.60.50.40.3

VSD, SOURCE-TO-DRAIN VOLTAGE (V)

Figure 8. Diode Forward Voltage vs. Current

SINGLE PULSE R

= 110°C/W

TA = 25°C

POWER (W)

1001

1000100

SINGLE PULSE TIME (s)

Figure 10. Single Pulse Maximum Power

Dissipation

D = 0.5

0.2

0.1

0.05

0.02

0.01

RESISTANCE NORMALIZED

0.001

, EFFECTIVE TRANSIENT THERMAL

SINGLE PULSE

t, TIME (s)

Figure 11. Thermal Response

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10.010.00001

100 1000100.10.0010.00010.000001

Page 5

NTGS3130N

PACKAGE DIMENSIONS

TSOP-6

CASE 318G-02

ISSUE S

0.05 (0.002)

456

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.

4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS.

DIMAMIN NOM MAX MIN

A1 0.01 0.06 0.10 0.001

b 0.25 0.38 0.50 0.010 c 0.10 0.18 0.26 0.004 D 2.90 3.00 3.10 0.114

E 1.30 1.50 1.70 0.051 e 0.85 0.95 1.05 0.034 L 0.20 0.40 0.60 0.008

STYLE 1:

PIN 1. DRAIN

MILLIMETERS

0.90 1.00 1.10 0.035

2.50 2.75 3.00 0.099 0.108 0.118 0° 10° 0° 10°

- -

2. DRAIN

3. GATE

4. SOURCE

5. DRAIN

6. DRAIN

INCHES

NOM MAX

0.039 0.043

0.002 0.004

0.014 0.020

0.007 0.010

0.118 0.122

0.059 0.067

0.037 0.041

0.016 0.024

SOLDERING FOOTPRINT*

2.4

0.094

0.95

0.037

1.9

0.075

0.95

0.037

0.7

0.028

1.0

0.039

SCALE 10:1

inches

*For additional information on our Pb-Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NTGS3130N/D