Datasheet ntgd4169f Datasheet

NTGD4169F

Power MOSFET and Schottky Diode

30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6

Features

• Fast Switching

• Low Gate Change

• Low R

• Low V

DS(on)

Schottky Diode

F

• Independently Connected Devices to Provide Design Flexibility

• This is a Pb−Free Device

Applications

• DC−DC Converters

• Portable Devices like PDA’s, Cellular Phones, and Hard Drives

MAXIMUM RATINGS (T

Parameter Symbol Value Unit

Drain−to−Source Voltage V

Gate−to−Source Voltage V

N−Channel

Continuous Drain Current (Note 1)

Power Dissipation (Note 1)

Pulsed Drain Current

Operating Junction and Storage Temperature TJ, T

Source Current (Body Diode) I

Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)

SCHOTTKY MAXIMUM RATINGS (T

Parameter Symbol Value Unit

Peak Repetitive Reverse Voltage V

DC Blocking Voltage V

Average Rectified Forward Current I

THERMAL RESISTANCE RATINGS

Parameter Symbol Value Unit

Junction−to−Ambient – Steady State (Note

1)

Junction−to−Ambient – t ≤ 5 s (Note 1)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).

= 25°C unless otherwise noted)

J

DSS

GS

I

R

I

D

DM

S

T

L

RRM

R

F

q

JA

q

JA

STG

Steady State T

t ≤ 5 s T

Steady State

t ≤ 5 s 1.1

= 25°C

A

T

= 85°C

A

= 25°C 2.9

A

T

= 25°C P

A

t

= 10 ms

p

= 25°C unless otherwise stated)

J

30 V

±12 V

2.6

1.9

0.9

8.6 A

−25 to 150

0.9 A

260 °C

30 V

1 A

140 °C/W

110 °C/W

A

W

°C

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N−CHANNEL MOSFET

R

V

(BR)DSS

30 V

90 mW @ 4.5 V

125 mW @ 2.5 V

DS(on)

Max

ID Max

2.6 A

2.2 A

SCHOTTKY DIODE

VR Max IF MaxVF Max

30 V

D

G

N−Channel MOSFET Schottky Diode

0.53 V

S

1.0 A

A

K

MARKING DIAGRAM

1

TSOP−6

CASE 318G

STYLE 15

TD = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location)

TD MG

G

1

PIN CONNECTION

A

1

S

2

G

3

(Top View)

K

6

N/C

5

4

D

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet.

May, 2008 − Rev. 1

1 Publication Order Number:

NTGD4169F/D

NTGD4169F

MOSFET ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

J

Characteristic Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V

Drain−to−Source Breakdown Voltage Temperature Coefficient

V

(BR)DSS/TJ

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

DSS

GSS

V

= 0 V, I

GS

V

= 0 V,

GS

= 24 V

V

DS

V

= 0 V, V

DS

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage V

Gate Threshold Temperature Coefficient V

GS(TH)/TJ

Drain−to−Source On Resistance R

Forward Transconductance g

GS(TH)

DS(on)

FS

V

= VDS, I

GS

V

= 4.5 V I

GS

V

= 2.5 V I

GS

V

= 15 V, I

DS

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

ISS

OSS

RSS

G(TOT)

G(TH)

GS

GD

V

= 0 V, f = 1.0 MHz,

GS

V

DS

V

= 4.5 V, V

GS

I

= 2.0 A

D

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time t

Rise Time t

Turn−Off Delay Time t

Fall Time t

d(ON)

r

d(OFF)

f

V

GS

I

D

= 4.5 V, V

= 1.0 A, R

DRAIN−TO−SOURCE CHARACTERISTICS

Forward Diode Voltage V

Reverse Recovery Time t

Charge Time T

Discharge Time T

Reverse Recovery Time Q

SD

RR

a

b

RR

VGS = 0 V IS = 0.9 A

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 0.9 A

2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

3. Switching characteristics are independent of operating junction temperatures.

= 250 mA

D

30 V

21.4

TJ = 25°C

TJ = 85°C

= ±12 V 100 nA

GS

= 250 mA

D

0.5 0.9 1.5 V

1.0

10

−3.4 mV/°C

= 2.6 A

D

= 2.2 A

D

= 2.6 A 2.6 S

D

52 90

67 125

295

= 15 V

48

27

3.7 5.5

DS

= 15 V,

0.6

0.9

0.8

7.0

= 15 V,

DS

= 6.0 W

G

4.0

14

2.0

TJ = 25°C

0.7 1.2

8.0

5.0

3.0

mV/°C

mA

mW

pF

nC

ns

V

ns

nC

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2

NTGD4169F

SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T

Parameter

Maximum Instantaneous Forward Voltage

Maximum Instantaneous Reverse Current

Symbol Test Conditions Min Ty p Max Unit

V

F

I

R

SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T

Parameter Symbol Test Conditions Min Typ Max Unit

Maximum Instantaneous Forward Voltage

Maximum Instantaneous Reverse Current

V

F

I

R

SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T

Parameter Symbol Test Conditions Min Typ Max Unit

Maximum Instantaneous Forward Voltage

Maximum Instantaneous Reverse Current

V

F

I

R

SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T

Parameter Symbol Test Conditions Min Typ Max Unit

Capacitance C V

= 25°C unless otherwise noted)

J

I

= 0.5 A 0.41 0.45

F

I

= 1.0 A 0.46 0.53

F

V

= 30 V 7.3 20

R

V

= 20 V 2.5 8.0

R

= 85°C unless otherwise noted)

J

I

= 0.5 A 0.35

F

I

= 1.0 A 0.41

F

V

= 30 V 0.4

R

V

= 20 V 0.17

R

= 125°C unless otherwise noted)

J

I

= 0.5 A 0.31

F

I

= 1.0 A 0.39

F

V

= 30 V 4.4

R

V

= 20 V 1.6

R

= 25°C unless otherwise noted)

J

= 10 V, f = 1.0 MHz 28 pF

R

V

mA

V

mA

V

mA

ORDERING INFORMATION

Device Package Shipping

NTGD4169FT1G TSOP−6

3000 / Tape & Reel

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

†

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3

NTGD4169F

0

TYPICAL CHARACTERISTICS N−CHANNEL

9.0

8.0

7.0

6.0

5.0

4.0

3.0

2.0

, DRAIN CURRENT (A)

D

I

1.0

0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

VGS = 4.5 V

3.5 V

2.5 V

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics

0.20

0.18

0.16

0.14

0.12

0.10

0.08

, DRAIN−TO−SOURCE

RESISTANCE (W)

0.06

0.04

DS(on)

R

0.02

0

1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

ID = 2.6 A

VGS, GATE VOLTAGE (V)

Figure 3. On−Region vs. Gate−To−Source

Voltage

1.6 ID = 2.6 A

1.5 VGS = 4.5 V

1.4

1.3

1.2

1.1

1.0

0.9

0.8

, DRAIN−TO−SOURCE RESISTANCE

0.7

0.6

DS(on)

R

−50 −25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (°C)

TJ = 25°C

2.0 V

1.5 V

TJ = 25°C

9.0 VDS = 5 V

8.0

7.0

6.0

5.0

4.0

3.0

, DRAIN CURRENT (A)

2.0

D

I

1.0

0

0.75 1 1.25 1.5 1.75 2 2.25 2.5

125°C

VGS, GATE−TO−SOURCE VOLTAGE (V)

−55°C

25°C

Figure 2. Transfer Characteristics

0.10 TJ = 25°C

0.09

0.08

0.07

0.06

0.05

0.04

0.03

, DRAIN−TO−SOURCE RESISTANCE (W)

0.02

0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.

DS(on)

R

VGS = 2.5 V

VGS = 4.5 V

ID, DRAIN CURRENT (A)

Figure 4. On−Resistance vs. Drain Current and

Temperature

400

350

300

250

200

150

100

C, CAPACITANCE (pF)

50

C

RSS

0

0 5 10 15 20 25 30

C

ISS

C

OSS

DRAIN−TO−SOURCE VOLTAGE (V)

TJ = 25°C VGS = 0 V f = 1 MHz

Figure 5. On−Resistance Variation with

Temperature

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Figure 6. Capacitance Variation

4

NTGD4169F

5

4

3

2

1

, GATE−TO−SOURCE VOLTAGE (V)

GS

0

V

Q

T

V

DS

V

Q

GS

GD

GS

ID = 2.0 A TJ = 25°C VDS = 15 V

16

14

12

10

8

6

4

2

0

01234

QG, TOTAL GATE CHARGE (nC)

Figure 7. Gate−to−Source and

Drain−to−Source Voltage versus Total Charge

1.2

ID = 250 mA

1.1

1.0

0.9

(V)

0.8

GS(th)

V

0.7

0.6

V

10

DS

, DRAIN−TO−SOURCE VOLTAGE (V)

1.0

, SOURCE CURRENT (A)

S

I

TJ = 150°C

0.1

0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 8. Diode Forward Voltage versus

40

30

20

POWER (W)

10

TJ = 25°C

Current

0.5

0.4

−50 −25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (°C)

Figure 9. Threshold Voltage

100

VGS = −10 V Single Pulse TA = 25°C

10

1

0.1

, DRAIN CURRENT (A)

D

I

R

Limit

DS(on)

Thermal Limit Package Limit

0.01

0.1 1 10 100

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

0

0.001 0.01 0.1 1 10 100 1000

SINGLE PULSE TIME (s)

Figure 10. Single Pulse Maximum Power

Dissipation

100 ms

1 ms

10 ms

dc

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5

NTGD4169F

1

Duty Cycle = 0.5

0.2

0.1

0.05

NORMALIZED

0.02

THERMAL RESPONSE

R(t), EFFECTIVE TRANSIENT

0.01

0.0001 0.001 0.01 0.1 1 10 100 1000

Single Pulse

t, TIME (s)

Figure 12. FET Thermal Response

TYPICAL CHARACTERISTICS SCHOTTKY

10

TJ = 125°C

1

(A)

−55°C

0.1

, INSTANTANEOUS FORWARD CURRENT

F

0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

I

VF, INSTANTANEOUS FORWARD VOLTAGE (V)

25°C

85°C

Figure 13. Typical Forward Voltage

100E−3

10E−3

TJ = 125°C

1E−3

100E−6

10E−6

, REVERSE CURRENT (A)

R

I

1E−6

100E−9

0102030

VR, REVERSE VOLTAGE (V)

TJ = 85°C

TJ = 25°C

Figure 14. Typical Reverse Current

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6

NTGD4169F

l

PACKAGE DIMENSIONS

TSOP−6

CASE 318G−02

ISSUE T

0.05 (0.002)

D

H

E

1

23

456

E

b

e

c

A1

A

L

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.

4. DIMENSIONS A AND B DO NOT INCLUDE

MOLD FLASH, PROTRUSIONS, OR GATE BURRS.

DIMAMIN NOM MAX MIN

A1 0.01 0.06 0.10 0.001

q

b 0.25 0.38 0.50 0.010 c 0.10 0.18 0.26 0.004

D 2.90 3.00 3.10 0.114

E 1.30 1.50 1.70 0.051 e 0.85 0.95 1.05 0.034 L 0.20 0.40 0.60 0.008

H

E

q

STYLE 15:

PIN 1. ANODE

MILLIMETERS

0.90 1.00 1.10 0.035

2.50 2.75 3.00 0.099 0.108 0.118 0° 10° 0° 10°

− −

2. SOURCE

3. GATE

4. DRAIN

5. N/C

6. CATHODE

INCHES

NOM MAX

0.039 0.043

0.002 0.004

0.014 0.020

0.007 0.010

0.118 0.122

0.059 0.067

0.037 0.041

0.016 0.024

SOLDERING FOOTPRINT*

2.4

0.094

0.95

0.037

1.9

0.075

0.95

0.037

0.7

0.028

1.0

0.039

SCALE 10:1

ǒ

inches

mm

Ǔ

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NTGD4169F/D

7