Datasheet ntgd3149c Datasheet

NTGD3149C

Power MOSFET

Complementary, 20 V, +3.5/−2.7 A, TSOP−6 Dual

Features

• Complementary N−Channel and P−Channel MOSFET

• Small Size (3 x 3 mm) Dual TSOP−6 Package

• Leading Edge Trench Technology for Low On Resistance

• Reduced Gate Charge to Improve Switching Response

• Independently Connected Devices to Provide Design Flexibility

• This is a Pb−Free Device

Applications

• DC−DC Conversion Circuits

• Load/Power Switching with Level Shift

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V

Gate−to−Source Voltage (N−Ch & P−Ch) V

N−Channel

Continuous Drain Current (Note 1)

P−Channel

Continuous Drain Current (Note 1)

Power Dissipation (Note 1)

Pulsed Drain Current

Operating Junction and Storage Temperature TJ, T

Source Current (Body Diode) I

Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)

THERMAL RESISTANCE RATINGS

Parameter Symbol Value Unit

Junction−to−Ambient – Steady State (Note 1)

Junction−to−Ambient – t ≤ 5 s (Note 1)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).

= 25°C unless otherwise noted)

J

Symbol Value Unit

DSS

GS

Steady

State

t ≤ 5 s T

Steady

State

t ≤ 5 s T

Steady State

t ≤ 5 s 1.1

N−Ch t

P−Ch 8.0

T

= 25°C

A

T

= 85°C

A

= 25°C 3.5

A

T

= 25°C

A

T

= 85°C

A

= 25°C 2.7

A

T

= 25°C P

A

= 10 ms

p

I

D

I

D

I

DM

STG

S

T

L

R

q

JA

R

q

JA

20 V

±8 V

3.2

2.3

2.4

1.7

0.9

11

−55 to 150

0.8 A

260 °C

140 °C/W

110 °C/W

A

W

A

°C

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R

MAX

(BR)DSS

N−Ch

20 V

P−Ch

−20 V

G1

N−CHANNEL MOSFET

TSOP−6

CASE 318G

STYLE 13

CC = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location)

DS(on)

60 mW @ 4.5 V

90 mW @ 2.5 V

110 mW @ 4.5 V

145 mW @ 2.5 V

D1

G2

S1

P−CHANNEL MOSFET

1

PIN CONNECTION

1

G1

S2

2

3

G2

(Top View)

ID MAX (Note 1)V

3.5 A

−2.7 A

S2

MARKING DIAGRAM

CC MG

G

1

6

D1

5

S1

4

D2

May, 2008 − Rev. 0

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet.

1 Publication Order Number:

NTGD3149C/D

NTGD3149C

ELECTRICAL CHARACTERISTICS (T

Parameter Symbol N/P Test Conditions Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V

Drain−to−Source Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

Drain−to−Source On Resistance R

Forward Transconductance g

CHARGES AND CAPACITANCES

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Gate Charge Q

Gate−to−Drain “Miller” Charge Q

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Gate Charge Q

Gate−to−Drain “Miller” Charge Q

V

(BR)DSS/TJ

V

= 25°C unless otherwise noted)

J

(BR)DSS

N

P

VGS = 0 V

N 1.1

P 1.1

N

DSS

GSS

VGS = 0 V, VDS = 16 V

P

VGS = 0 V, VDS = −16 V

N

VGS = 0 V, VDS = 16 V

P

VGS = 0 V, VDS = −16 V

N

P

GS(TH)

DS(on)

N

P

VGS = V

N

P

VGS = −4.5 V , ID = −2.7 A

N

P

VGS = −2.5 V , ID = −2.4 A

N VGS = 1.8 V , ID = 2.2 A 67 150

P VGS = −1.8 V , ID = −1.9 A 143 220

FS

C

ISS

OSS

RSS

ISS

OSS

RSS

G(TOT)

G(TH)

GS

GD

G(TOT)

G(TH)

GS

GD

N

P

VDS = −10 V , ID = −2.7 A

N

f = 1 MHz, VGS = 0 V

P VDS = −10 V

N

P

VGS = 4.5 V, VDS = 10 V, ID = 2.0 A

VGS = −4.5 V, VDS = −10 V, ID = −1.0 A

ID = 250 mA

ID = −250 mA

TJ = 25 °C

TJ = 85 °C

VDS = 0 V, VGS = ±8 V

ID = 250 mA

DS

ID = −250 mA

VGS = 4.5 V , ID = 3.5 A

VGS = 2.5 V , ID = 2.9 A

VDS = 10 V , ID = 3.5 A

VDS = 10 V

= 6 W

R

G

= 6 W

R

G

20

−20

1.0 mA

−1.0

10

−10

±100

0.4 1.0

−0.4 −1.0

41 60

83 110

51 90

104 145

4.7

5.1

387

73

43

509

76

40

4.6 5.5

0.3

0.7

1.2

5.2 5.5

0.4

1.0

1.2

V

mV/°C

nA

V

mW

S

pF

nC

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2

NTGD3149C

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

J

Parameter UnitMaxTypMinTest ConditionsN/PSymbol

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

Fall Time t

Turn−On Delay Time t

Rise Time t

Turn−Off Delay Time t

Fall Time t

t

d(ON)

r

d(OFF)

f

d(ON)

r

d(OFF)

f

N

P

VGS = 4.5 V, VDD = 10 V,

= 1.0 A, RG = 6.0 W

I

D

VGS = −4.5 V, VDD = −10 V,

= −1.0 A, RG = 6.0 W

I

D

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage V

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

SD

RR

a

b

RR

a

b

RR

N

VGS = 0 V, TJ = 25 °C

P

N

P

VGS = 0 V, dIS / dt = 100 A/ms

2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

3. Switching characteristics are independent of operating junction temperatures.

IS = 0.8 A

IS = −0.8 A

6.5

3.8

16.4

2.4

7.0

5.3

33.3

29.5

0.7 1.2

−0.7 −1.2

7.7

4.5

3.2

1.9 nC

11.4

7.5

3.9

4.7 nC

ns

V

ns

ORDERING INFORMATION

Device Package Shipping

NTGD3149CT1G TSOP6

3000 / Tape & Reel

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

†

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3

NTGD3149C

TYPICAL CHARACTERISTICS (N−CHANNEL)

6.0

5.0

4.0

3.0

2.0

, DRAIN CURRENT (A)

D

I

1.0

0

4.5 V

2.2 V

1.8 V

VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)

2.5 V

2.0 V

1.6 V

1.4 V

VGS = 1.2 V

3.02.52.01.51.00.50

6.0 VDS ≥ 10 V

5.0

4.0

3.0

2.0

, DRAIN CURRENT (A)

D

I

1.0

0

TJ = 125°C

TJ = −55°C

Figure 1. Nch On−Region Characteristics Figure 2. Nch Transfer Characteristics

0.38

0.34

0.30

0.26

0.22

0.18

0.14

0.10

0.06

, DRAIN−TO−SOURCE RESISTANCE (W)

0.02

DS(on)

R

ID = 3.5 A T = 25°C

6.05.04.03.02.01.0

VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

0.08

0.07

0.06

0.05

0.04

0.03

0.02

0.01

, DRAIN−TO−SOURCE RESISTANCE (W)

DS(on)

R

TJ = 25°C

VGS = 2.5 V

VGS = 4.5 V

0

Figure 3. Nch On−Resistance vs. Gate Voltage Figure 4. Nch On−Resistance vs. Drain

Current and Gate Voltage

TJ = 25°C

2.52.01.51.00.50

6.05.04.03.02.01.0

1.5

1.4

1.3

1.2

1.1

1.0

, DRAIN−TO−SOURCE

0.9

DS(on)

R

RESISTANCE (NORMALIZED)

0.8

0.7

ID = 3.5 A

V

= 4.5 V

GS

Figure 5. Nch On−Resistance Variation with

10,000

VGS = 0 V

TJ = 150°C

1000

TJ = 125°C

, LEAKAGE (nA)

100

DSS

I

1251007550250−25−50

150

TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)

10

Figure 6. Nch Drain−to−Source Leakage

Temperature

Current vs. Voltage

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4

161412108.06.04.02.0

18

NTGD3149C

TYPICAL CHARACTERISTICS (N−CHANNEL)

600 550

500

450

400

350 300

250

200

150

C, CAPACITANCE (pF)

100

50

0

100

10

t, TIME (ns)

1.0

VGS = 0 V T

= 25°C

J

4.5

4.0

QT

3.5

C

iss

3.0

2.5

2.0

Q1 Q2

1.5

C

oss

C

rss

12 14 2018

16108.06.04.02.00

1.0

, GATE−TO−SOURCE VOLTAGE (V)

0.5

GS

V

0

ID = 3.5 A T

VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)

Figure 7. Nch Capacitance Variation Figure 8. Nch Gate−to−Source Voltage vs.

Total Charge

3.5

VDD = 10 V I

= 3.5 A

D

V

GS

= 4.5 V

t

d(on)

t

r

t

f

t

d(off)

RG, GATE RESISTANCE (W)

Figure 9. Nch Resistive Switching Time

Variation vs. Gate Resistance

, SOURCE CURRENT (A)

S

I

100101.0

VGS = 0 V

3.0

T

= 25°C

J

2.5

2.0

1.5

1.0

0.5

0

V

, SOURCE−TO−DRAIN VOLTAGE (V)

SD

Figure 10. Nch Diode Forward Voltage vs.

Current

0.70.60.50.40.30.20.10

= 25°C

J

5.04.03.02.01.00

0.90.8

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5

NTGD3149C

TYPICAL CHARACTERISTICS (P−CHANNEL)

−4.5 V

6.0

5.0

4.0

3.0

2.0

, DRAIN CURRENT (A)

D

−I

1.0

0

−2.5 V

−VDS, DRAIN−TO−SOURCE VOLTAGE (V) −VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 11. Pch On−Region Characteristics Figure 12. Pch Transfer Characteristics

0.38

0.34

0.30

0.26

0.22

0.18

0.14

0.10

0.06

, DRAIN−TO−SOURCE RESISTANCE (W)

0.02

DS(on)

R

−VGS, GATE−TO−SOURCE VOLTAGE (V) −ID, DRAIN CURRENT (A)

Figure 13. Pch On−Resistance vs. Gate

−3.0 V

−2.0 V

Voltage

TJ = 25°C

VGS = −1.0 V

ID = −2.7 A T = 25°C

−1.8 V

−1.6 V

−1.4 V

−1.2 V

6.0

5.0

4.0

3.0

2.0

, DRAIN CURRENT (A)

D

−I

1.0

0.14

0.12

0.10

0.08

0.06

0.04

0.02

, DRAIN−TO−SOURCE RESISTANCE (W)

DS(on)

R

0

3.02.52.01.51.00.50

6.05.04.03.02.01.0

VDS ≥ −10 V

TJ = −55°C

TJ = 25°C

TJ = 125°C

TJ = 25°C

VGS = −2.5 V

VGS = −4.5 V

Figure 14. Pch On−Resistance vs. Drain

Current and Gate Voltage

2.52.01.51.00.50

6.05.04.03.02.01.0

1.5

1.4

1.3

1.2

1.1

1.0

, DRAIN−TO−SOURCE

0.9

DS(on)

R

RESISTANCE (NORMALIZED)

0.8

0.7

ID = −2.7 A

V

= −4.5 V

GS

Figure 15. Pch On−Resistance Variation with

10,000

VGS = 0 V

1000

, LEAKAGE (nA)

100

DSS

I

1251007550250−25−50

150

TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V)

10

TJ = 150°C

TJ = 125°C

Figure 16. Pch Drain−to−Source Leakage

Temperature

Current vs. Voltage

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161412108.06.04.02.0

18

NTGD3149C

TYPICAL CHARACTERISTICS (P−CHANNEL)

700 650

600 550 500 450 400 350 300 250 200

C, CAPACITANCE (pF)

150 100

C

50

0

1000

100

t, TIME (ns)

10

VGS = 0 V

C

iss

TJ = 25°C

4.5

4.0

3.5

QT

3.0

2.5

2.0

Q1 Q2

1.5

ID = 2.7 A T

= 25°C

J

rss

C

oss

108.06.04.02.00

12

1.0

, GATE−TO−SOURCE VOLTAGE (V)

0.5

GS

0

−V

−VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)

Figure 17. Pch Capacitance Variation Figure 18. Pch Gate−to−Source Voltage vs.

Total Charge

3.5

VDD = −10 V I

= −1 A

D

= −4.5 V

V

GS

t

d(on)

t

d(off)

3.0

2.5

2.0

t

f

t

r

1.5

1.0

, SOURCE CURRENT (A)

S

I

0.5

VGS = 0 V T

= 25°C

J

5.04.03.02.01.00

1.0

RG, GATE RESISTANCE (W)

Figure 19. Pch Resistive Switching Time

Variation vs. Gate Resistance

0

100101.0

−V

, SOURCE−TO−DRAIN VOLTAGE (V)

SD

0.70.60.50.40.30.20.10

0.90.8

Figure 20. Pch Diode Forward Voltage vs.

Current

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7

NTGD3149C

PACKAGE DIMENSIONS

TSOP−6

CASE 318G−02

ISSUE S

0.05 (0.002)

D

456

H

E

1

23

E

b

e

A

A1

c

L

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.

4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS.

DIMAMIN NOM MAX MIN

A1 0.01 0.06 0.10 0.001

q

b 0.25 0.38 0.50 0.010 c 0.10 0.18 0.26 0.004 D 2.90 3.00 3.10 0.114 E 1.30 1.50 1.70 0.051 e 0.85 0.95 1.05 0.034 L 0.20 0.40 0.60 0.008

H

E

q

STYLE 13:

PIN 1. GATE 1

MILLIMETERS

0.90 1.00 1.10 0.035

2.50 2.75 3.00 0.099 0.108 0.118 0° 10° 0° 10°

− −

2. SOURCE 2

3. GATE 2

4. DRAIN 2

5. SOURCE 1

6. DRAIN 1

INCHES

NOM MAX

0.039 0.043

0.002 0.004

0.014 0.020

0.007 0.010

0.118 0.122

0.059 0.067

0.037 0.041

0.016 0.024

SOLDERING FOOTPRINT*

2.4

0.094

0.95

0.037

1.9

0.075

0.95

0.037

0.7

0.028

1.0

0.039

SCALE 10:1

ǒ

inches

mm

Ǔ

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NTGD3149C/D

8