Datasheet ntgd3148n-d Datasheet

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Page 1

NTGD3148N

Power MOSFET

20 V, 3.5 A, Dual N-Channel, TSOP-6

Features

•Low Threshold Levels, VGS(th) < 1.5 V

•Low Gate Charge (3.8 nC)

•Leading Edge Trench Technology of Low R

•High Power and Current Handling Capability

•This is a Pb-Free Device

Applications

•DC-DC Converters (Buck and Boost Circuits)

•Low Side Load Switch

•Optimized for Battery and Load Management Applications in

Portable Equipment Like Cell Phones, DSCs, Media Player, Etc

•Battery Charging and Protection Circuits

DS(on)

(BR)DSS

20 V

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N-CHANNEL MOSFET

Max

DS(on)

70 mW @ 4.5 V

100 mW @ 2.5 V

ID Max

3.5 A

MAXIMUM RATINGS (T

Parameter Symbol Value Unit

Drain-to-Source Voltage V

Gate-to-Source Voltage V

Continuous Drain Current (Note 1)

Power Dissipation (Note 1)

Pulsed Drain Current

Operating Junction and Storage Temperature TJ, T

Source Current (Body Diode) I

Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)

= 25°C unless otherwise noted)

DSS

Steady State

t ≤ 5 s T

Steady State

t ≤ 5 s 1.1

= 25°C

= 85°C 2.2

= 25°C I

= 25°C P

= 10 ms

STG

20 V

±12 V

3.0

3.5 A

0.9

10 A

-50 to 150

0.8 A

260 °C

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Value Unit

Junction-to-Ambient – Steady State (Note 1)

Junction-to-Ambient – t ≤ 5 s (Note 1)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).

140 °C/W

110 °C/W

N-CHANNEL MOSFET

MARKING DIAGRAM

TSOP-6

CASE 318G

STYLE 13

DN = Specific Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location)

DN MG

PIN CONNECTION

(Top View)

© Semiconductor Components Industries, LLC, 2008

April, 2008 - Rev. 0

See detailed ordering and shipping information in the package

ORDERING INFORMATION

dimensions section on page 2 of this data sheet.

1 Publication Order Number:

NTGD3148N/D

Page 2

NTGD3148N

MOSFET ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

Characteristic Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage V

Drain-to-Source Breakdown Voltage Temperature Coefficient

(BR)DSS/TJ

Zero Gate Voltage Drain Current I

Gate-to-Source Leakage Current I

(BR)DSS

DSS

GSS

= 0 V, I

= 250 mA

ID = 250 mA, Ref to 25°C

= 0 V,

= 16 V

= 0 V, V

TJ = 25°C

TJ = 125°C

= ±12 V 100 nA

20 V

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage V

Gate Threshold Temperature Coefficient V

GS(TH)/TJ

Drain-to-Source On Resistance R

Forward Transconductance g

GS(TH)

DS(on)

= VDS, I

= 4.5 V I

= 2.5 V I

= 5.0 V, I

= 250 mA

= 3.5 A

= 2.8 A

= 3.5 A 6.2 S

0.5 1.5 V

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate-to-Source Charge Q

Gate-to-Drain Charge Q

ISS

OSS

RSS

G(TOT)

G(TH)

= 0 V, f = 1.0 MHz,

= 4.5 V, V

= 3.5 A

= 10 V

= 10 V,

Gate Resistance RG 2.8

SWITCHING CHARACTERISTICS (Note 3)

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

d(ON)

d(OFF)

= 4.5 V, V

= 3.5 A, R

= 3.0 W

= 10 V,

DRAIN-TO-SOURCE CHARACTERISTICS

Forward Diode Voltage V

Reverse Recovery Time t

Charge Time T

Discharge Time T

Reverse Recovery Time Q

VGS = 0 V

ID = 0.8 A

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 0.8 A

TJ = 25°C

TJ = 125°C 0.57

2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

3. Switching characteristics are independent of operating junction temperatures.

12.5

1.0

mV/°C

3.28 mV/°C

41.7 70

58 100

300

3.8

0.3

0.7

1.1

7.4

11.2

12.8

1.6

0.71 V

9.0

5.0

4.0

2.5

ORDERING INFORMATION

Device Package Shipping

NTGD3148NT1G TSOP-6

3000 / Tape & Reel

(Pb-Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

†

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Page 3

, DRAIN CURRENT (A)

0 0.5 1 1.5 2 2.5 3

2.4 V - 3.0 V

2.2 V

4.5 V

VDS, DRAIN-TO-SOURCE VOLTAGE (V)

VGS = 2.0 V

1.8 V

1.6 V

1.4 V

NTGD3148N

, DRAIN CURRENT (A)

VDS ≥ 10 V

TJ = 125°C

TJ = 25°C

TJ = -55°C

0 0.5 1 1.5 2 2.5

VGS, GATE-TO-SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics

0.38

0.34

0.3

0.26

0.22

0.18

0.14

0.1

0.06

, DRAIN-TO-SOURCE RESISTANCE (W)

0.02 123456

DS(on)

VGS, GATE VOLTAGE (V)

ID = 3.5 A

TJ = 25°C

Figure 3. On-Resistance vs. Voltage

1.5

ID = 3.5 A

1.4 VGS = 4.5 V

1.3

1.2

1.1

Figure 2. Transfer Characteristics

0.08

TJ = 25°C

0.07

0.06

0.05

0.04

0.03

0.02

0.01

, DRAIN-TO-SOURCE RESISTANCE (W)

234567

DS(on)

VGS = 2.5 V

VGS = 4.5 V

ID, DRAIN CURRENT (A)

Figure 4. On-Resistance vs. Drain Current

and Gate Voltage

10000

TJ = 125°C

1000

TJ = 150°C

(NORMALIZED)

0.9

0.8

, DRAIN-TO-SOURCE RESISTANCE

0.7

DS(on)

-50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On-Resistance Variation vs.

Temperature

, LEAKAGE (nA)

100

DSS

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2 7 12 17

VDS, DRAIN-TO-SOURCE VOLTAGE (V)

Figure 6. Drain-to-Source Leakage Current

vs. Voltage

Page 4

NTGD3148N

400

350

iss

300

250

200

150

100

C, CAPACITANCE (pF)

oss

rss

0 2 4 6 8 10 12 14 16 18 20

VDS, DRAIN-TO-SOURCE VOLTAGE (V)

Figure 7. Capacitance Variation

100

VDD = 10 V ID = 3.5 A VGS = 4.5 V

t, TIME (ns)

d(on)

1 10 100

RG, GATE RESISTANCE (W)

Figure 9. Resistive Switching Time

Variation vs. Gate Resistance

VGS = 0 V

TJ = 25°C

d(off)

4.5

3.5

2.5 Q

1.5

, GATE-TO-SOURCE VOLTAGE (V)

0.5

ID = 3.5 A TJ = 25°C

01234

QG, TOTAL GATE CHARGE (nC)

Figure 8. Gate-To-Source and

Drain-To-Source Voltage vs. Total Charge

VGS = 0 V TJ = 25°C

2.5

1.5

, SOURCE CURRENT (A)

0.5

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9

VSD, SOURCE-TO-DRAIN VOLTAGE (V)

Figure 10. Diode Forward Voltage vs. Current

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Page 5

NTGD3148N

PACKAGE DIMENSIONS

TSOP-6

CASE 318G-02

ISSUE S

0.05 (0.002)

456

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.

4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS.

DIMAMIN NOM MAX MIN

A1 0.01 0.06 0.10 0.001

b 0.25 0.38 0.50 0.010

c 0.10 0.18 0.26 0.004 D 2.90 3.00 3.10 0.114 E 1.30 1.50 1.70 0.051

e 0.85 0.95 1.05 0.034 L 0.20 0.40 0.60 0.008

STYLE 13:

PIN 1. GATE 1

MILLIMETERS

0.90 1.00 1.10 0.035

2.50 2.75 3.00 0.099 0.108 0.118 0° 10° 0° 10°

- -

2. SOURCE 2

3. GATE 2

4. DRAIN 2

5. SOURCE 1

6. DRAIN 1

INCHES

NOM MAX

0.039 0.043

0.002 0.004

0.014 0.020

0.007 0.010

0.118 0.122

0.059 0.067

0.037 0.041

0.016 0.024

SOLDERING FOOTPRINT*

2.4

0.094

0.95

0.037

1.9

0.075

0.95

0.037

0.7

0.028

1.0

0.039

SCALE 10:1

inches

*For additional information on our Pb-Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

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NTGD3148N/D