Datasheet ntf6p02t3 Datasheet

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Page 1

NTF6P02T3

Power MOSFET

-10 Amps, -20 Volts

P−Channel SOT−223

Features

• Low R

DS(on)

• Logic Level Gate Drive

• Diode Exhibits High Speed, Soft Recovery

• Avalanche Energy Specified

• Pb−Free Package is Available

Typical Applications

• Power Management in Portables and Battery−Powered Products,

i.e.: Cellular and Cordless Telephones and PCMCIA Cards

MAXIMUM RATINGS (T

Rating

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Drain Current (Note 1)

− Continuous @ T

− Continuous @ TA = 70°C

− Single Pulse (t

Total Power Dissipation @ TA = 25°C P

Operating and Storage Temperature Range TJ, T

Single Pulse Drain−to−Source Avalanche

Energy − Starting T (VDD = −20 Vdc, VGS = −5.0 Vdc,

= −10 A, L = 3.0 mH, RG = 25W)

L(pk)

Thermal Resistance

− Junction to Lead (Note 1)

− Junction to Ambient (Note 2)

− Junction to Ambient (Note 3)

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Steady State.

2. When surface mounted to an FR4 board using 1” pad size, (Cu. Area 1.127 sq in), Steady State.

3. When surface mounted to an FR4 board using minimum recommended pad size, (Cu. Area 0.412 sq in), Steady State.

= 25°C unless otherwise noted)

= 25°C

= 10 ms)

= 25°C

Symbol Value Unit

−20 Vdc

±8.0 Vdc

−10

−8.4

−35

8.3 W

−55 to +150

150 mJ

°C/W

71.4 160

260 °C

Adc

Apk

°C

R R R

DSS

I I

q q q

D D

stg

JL JA JA

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−10 AMPERES

−20 VOLTS

DS(on)

SOT−223

CASE 318E

STYLE 3

A = Assembly Location Y = Year W = Work Week 6P02 = Specific Device Code G = Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

Device Package Shipping

NTF6P02T3 SOT−223 4000/Tape & Reel

NTF6P02T3G

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

= 44 mW (Typ.)

P−Channel MOSFET

MARKING DIAGRAM

& PIN ASSIGNMENT

Gate2Drain3Source

SOT−223

(Pb−Free)

Drain

AYW

6P02G

†

4000/Tape & Reel

January, 2010 − Rev. 3

Publication Order Number:

NTF6P02T3/D

Page 2

NTF6P02T3

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage (Note 4)

= 0 Vdc, ID = −250 mAdc)

Temperature Coefficient (Positive)

Zero Gate Voltage Drain Current

= −20 Vdc, VGS = 0 Vdc)

= −20 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate−Body Leakage Current

= ± 8.0 Vdc, VDS = 0 Vdc)

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage (Note 4)

= VGS, ID = −250 mAdc)

Threshold Temperature Coefficient (Negative)

Static Drain−to−Source On−Resistance (Note 4)

= −4.5 Vdc, ID = −6.0 Adc)

= −2.5 Vdc, ID = −4.0 Adc)

= −2.5 Vdc, ID = −3.0 Adc)

Forward Transconductance (Note 4)

= −10 Vdc, ID = −6.0 Adc)

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance C

(VDS = −16 Vdc, V

f = 1.0 MHz)

Transfer Capacitance C

Input Capacitance

Output Capacitance C

(VDS = −10 Vdc, V

f = 1.0 MHz)

Transfer Capacitance C

= 0 V,

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

Fall Time t

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

Fall Time t

Gate Charge (VDS = −16 Vdc, ID = −6.0 Adc,

= −5.0 Vdc, ID = −1.0 Adc,

= −4.5 Vdc,

= 6.0 W)

= −16 Vdc, ID = −6.0 Adc,

= −4.5 Vdc,

= 2.5 W)

= −4.5 Vdc) (Note 4)

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage (IS = −3.0 Adc, VGS = 0 Vdc) (Note 4)

Reverse Recovery Time (IS = −3.0 Adc, VGS = 0 Vdc,

Reverse Recovery Stored Charge Q

4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

5. Switching characteristics are independent of operating junction temperatures.

= −2.1 Adc, VGS = 0 Vdc)

(IS = −3.0 Adc, VGS = 0 Vdc, TJ = 125°C)

/dt = 100 A/ms) (Note 4)

Symbol Min Typ Max Unit

(BR)DSS

DSS

GSS

GS(th)

DS(on)

d(on)

d(off)

d(on)

d(off)

iss

oss

rss

iss

oss

rss

−20

−

−25

−11

−

−1.0

−10

− − ± 100 nAdc

−0.4

−

−0.7

2.6

44 57 57

−1.0

−

50 70

−

− 12 − Mhos

− 900 1200

− 350 500

− 90 150

− 940 −

− 410 −

− 11 0 −

− 7.0 12

− 25 45

− 75 125

− 50 85

− 8.0 −

− 30 −

− 60 −

− 15 20

− 1.7 −

− 6.0 −

−

−0.82

−

−0.74

−

−0.68

−1.2

−

− 42 −

− 17 −

− 25 −

− 0.036 −

Vdc

mV/°C

mAdc

Vdc

mV/°C

Vdc

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Page 3

NTF6P02T3

TYPICAL ELECTRICAL CHARACTERISTICS

−10 V

−2.2 V

−7.0 V

−5.0 V

−2.4 V

−3.2 V

−4.4 V

DRAIN CURRENT (AMPS)

−I

−V

DS,

DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

0.2

0.15

0.1

0.05

DRAIN−TO−SOURCE RESISTANCE (W)

DS(on),

GATE−TO−SOURCE VOLTAGE (VOLTS)

−V

GS,

Figure 3. On−Resistance versus

Gate−to−Source Voltage

−2.0 V

−1.8 V

−1.6 V

−1.4 V

VGS = −1.2 V

421

5867 9

TJ = 25°C

ID = −6.0 A T

= 25°C

DRAIN CURRENT (AMPS)

−I

030.5 21 1.5 2.5

0.08

TJ = 25°C

0.07

0.06

0.05

0.04

0.03

DRAIN−TO−SOURCE RESISTANCE (W)

0.02

DS(on),

Figure 4. On−Resistance versus Drain Current

≥ −10 V

TJ = −55°C

TJ = 25°C

−V

GATE−TO−SOURCE VOLTAGE (VOLTS)

GS,

TJ = 100°C

VGS = −2.5 V

VGS = −4.5 V

41086

−ID, DRAIN CURRENT (AMPS)

and Gate Voltage

12 14

1.6 ID = −6.0 A V

= −4.5 V

1.4

1.2

1.0

(NORMALIZED)

0.8

DRAIN−TO−SOURCE RESISTANCE

0.6

−50 50250−25 75 125100

DS(on),

, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

10,000

1000

, LEAKAGE (nA)

DSS

−I

100

150

21620846

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VGS = 0 V

TJ = 150°C

TJ = 100°C

1410 12 18

−V

DRAIN−TO−SOURCE VOLTAGE (VOLTS)

DS,

Figure 6. Drain−to−Source Leakage Current

versus Voltage

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NTF6P02T3

TYPICAL ELECTRICAL CHARACTERISTICS

3000

iss

VDS = 0 V

VGS = 0 V

TJ = 25°C

2400

1800

1200

C, CAPACITANCE (pF)

600

rss

iss

oss

rss

10 1001520

−V

, GATE−TO−SOURCE VOLTAGE (V)

−V 0816

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE

(VOLTS)

Figure 7. Capacitance Variation Figure 8. Gate−to−Source and

1000

100

VDD = −16 V I

= −3.0 A

= −4.5 V

d(off)

−V

ID = −6.0 A T

= 25°C

124

, TOTAL GATE CHARGE (nC)

Drain−to−Source Voltage versus Total Charge

VGS = 0 V T

= 25°C

, DRAIN−TO−SOURCE VOLTAGE (V)

−V

d(on)

t, TIME (ns)

1 10 100 0.3 0.6 1.2

RG, GATE RESISTANCE (W)

Figure 9. Resistive Switching Time Variation

, SOURCE CURRENT (AMPS)

−I 0

0.9

−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

Figure 10. Diode Forward Voltage versus Current

versus Gate Resistance

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Page 5

NTF6P02T3

TYPICAL ELECTRICAL CHARACTERISTICS

D = 0.5

0.2

0.1

0.05

0.1

0.02

, EFFECTIVE TRANSIENT

THERMAL RESPONSE

THJA(t)

SINGLE PULSE

0.01

1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01

0.01

CHIP JUNCTION

Figure 11. FET Thermal Response

NORMALIZED TO R

0.0175 W

0.0154 F

t, TIME (s)

0.0710 W

0.0854 F

AT STEADY STATE (1″ PAD)

0.2706 W

0.3074 F

0.5779 W

1.7891 F

0.7086 W

107.55 F

1.0E+02 1.0E+03

AMBIENT

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Page 6

0.08 (0003)

123

NTF6P02T3

PACKAGE DIMENSIONS

SOT−223 (TO−261)

CASE 318E−04

ISSUE N

NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH.

DIMAMIN NOM MAX MIN

A1 0.02 0.06 0.10 0.001

b 0.60 0.75 0.89 0.024

b1 2.90 3.06 3.20 0.115

c 0.24 0.29 0.35 0.009 D 6.30 6.50 6.70 0.249 E 3.30 3.50 3.70 0.130 e 2.20 2.30 2.40 0.087

L 0.20 −−− −−− 0.008 −−− −−− L1 1.50 1.75 2.00 0.060 H

STYLE 3:

PIN 1. GATE

MILLIMETERS

1.50 1.63 1.75 0.060

0.85 0.94 1.05 0.033

6.70 7.00 7.30 0.264 0° 10° 0° 10°

− −

2. DRAIN

3. SOURCE

4. DRAIN

SOLDERING FOOTPRINT*

3.8

0.15

INCHES

NOM MAX

0.064 0.068

0.002 0.004

0.030 0.035

0.121 0.126

0.012 0.014

0.256 0.263

0.138 0.145

0.091 0.094

0.037 0.041

0.069 0.078

0.276 0.287

2.0

0.079

2.3

0.091

2.3

0.091

6.3

0.248

2.0

0.079

1.5

0.059

SCALE 6:1

inches

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NTF6P02T3/D