Datasheet ntf3055l175-d Datasheet

NTF3055L175

Preferred Device

Power MOSFET

2.0 A, 60 V, Logic Level

N−Channel SOT−223

Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.

Features

• Pb−Free Packages are Available

Applications

• Power Supplies

• Converters

• Power Motor Controls

• Bridge Circuits

MAXIMUM RATINGS (T

Rating

Drain−to−Source Voltage V
Drain−to−Gate Voltage (RGS = 1.0 MW)
Gate−to−Source Voltage

Continuous
Non−repetitive (t

Drain Current

Continuous @ T
Continuous @ TA = 100°C
Single Pulse (t

Total Power Dissipation @ TA = 25°C (Note 1)
Total Power Dissipation @ T
Derate above 25°C

Operating and Storage Temperature Range TJ, T
Single Pulse Drain−to−Source Avalanche

Energy − Starting T

(VDD = 25 Vdc, VGS = 5.0 Vdc,
I

= 3.6 A, L = 10 mH, VDS = 60 Vdc)

L(pk)

Thermal Resistance

Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)

Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. When surface mounted to an FR4 board using 1″ pad size, 1 oz.

(Cu. Area 0.995 in

2. When surface mounted to an FR4 board using minimum recommended pad

size, 2−2.4 oz. (Cu. Area 0.272 in

A

≤ 10 ms)

p

J

= 25°C unless otherwise noted)

C

≤ 10 ms)

p

= 25°C

= 25°C (Note 2)

A

= 25°C

2

).

2

).

Symbol Value Unit

60 Vdc
60 Vdc

± 15
± 20

2.0

1.2

6.0

2.1

1.3

0.014

−55 to 175 °C
65 mJ

72.3
114

260 °C

Vdc
Vpk

Adc
Apk

W
W

W/°C

°C/W

V

V

E

R
R

DSS
DGR

GS

I
I

I

DM

P

AS

q
q

T

D
D

D

stg

JA
JA

L

http://onsemi.com

2.0 AMPERES, 60 VOLTS
R

DS(on)

G

1

2

3

MARKING DIAGRAM

A = Assembly Location
Y = Year
W = Work Week
5L175 = Device Code
G = Pb−Free Package

(Note: Microdot may be in either location)

PIN ASSIGNMENT

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.

= 175 mW

N−Channel

D

S

4

AYW

5L175 G

1

4

Drain

Gate Drain Source

SOT−223

CASE 318E

STYLE 3

G

321

© Semiconductor Components Industries, LLC, 2006

April, 2006 − Rev. 3

Preferred devices are recommended choices for future

use and best overall value.

1

Publication Order Number:

NTF3055L175/D

NTF3055L175

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

(V

= 0 Vdc, ID = 250 mAdc)

GS

Temperature Coefficient (Positive)

(Note 3)

Zero Gate Voltage Drain Current

(V

= 60 Vdc, VGS = 0 Vdc)

DS

(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)

Gate−Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc) I

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

(Note 3)

(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)

Static Drain−to−Source On−Resistance (Note 3)

(V

= 5.0 Vdc, ID = 1.0 Adc)

GS

Static Drain−to−Source On−Resistance (Note 3)

(V

= 5.0 Vdc, ID = 2.0 Adc)

GS

(VGS = 5.0 Vdc, ID = 1.0 Adc, TJ = 150°C)

Forward Transconductance (Note 3)

(V

= 8.0 Vdc, ID = 1.5 Adc)

DS

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance C

(VDS = 25 Vdc, V

= 0 V, f = 1.0 MHz)

GS

Transfer Capacitance C

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time
Rise Time t
Turn−Off Delay Time t

V

(V

= 30 Vdc, ID = 2.0 Adc,

DD

= 5.0 Vdc, RG = 9.1 W) (Note 3)

GS

Fall Time t
Gate Charge

(VDS = 48 Vdc, ID = 2.0 Adc,

VGS = 5.0 Vdc) (Note 3)

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage (IS = 2.0 Adc, VGS = 0 Vdc)

(IS = 2.0 Adc, VGS = 0 Vdc,

T

= 150°C) (Note 3)

J

Reverse Recovery Time

(IS = 2.0 Adc, VGS = 0 Vdc,

/dt = 100 A/ms) (Note 3)

dI

S

Reverse Recovery Stored Charge Q

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

4. Switching characteristics are independent of operating junction temperatures.

Symbol Min Typ Max Unit

V

(BR)DSS

I

DSS

GSS

V

GS(th)

R

DS(on)

V

DS(on)

g

C

t

d(on)

d(off)

Q

Q
Q

V

t
t
t

fs

iss

oss

rss

r

f

SD

rr
a
b

RR

60

72.8

−

74.4

−

−

−

−

−

−

1.0
10

− − ± 100 nAdc

1.0

−

1.7

4.2

2.0

−

− 155 175

− 0.32

0.57

0.42

−

− 3.2 − Mhos

− 194 270

− 70 100

− 29 40

− 10.2 20

− 21 40

− 14.3 30

− 15.3 30

T
1
2

− 5.1 10

− 1.4 −

− 2.5 −

−

0.84

−

0.68

1.0

−

− 28.3 −

− 15.6 −

− 12.7 −

− 0.027 −

Vdc

mV/°C

mAdc

Vdc

mV/°C

mW

Vdc

pF

ns

nC

Vdc

ns

mC

http://onsemi.com

2

3.2

I

DRAIN CURRENT (AMPS)

3.2

2.8

2.4

2.0

VGS = 3.5 V

VGS = 4 V

NTF3055L175

VGS = 3 V

2.8

2.4

V

≥ 10 V

DS

2

1.6

1.2

0.8

D,

0.4
0

0

0.28
VGS = 5 V

0.24

0.2

0.16

0.12

0.08

0.04

DRAIN−TO−SOURCE RESISTANCE (W)

0

DS(on),

R

2

1.8

1.6

VGS = 5 V

0.4

V

DRAIN−TO−SOURCE VOLTAGE (VOLTS)

DS,

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

1.2 2.0 1 4.21.8 3.41.4 2.2 2.6 3 3.8

TJ = 100°C

VGS = 2.5 V

2.4

1.2

0.8

DRAIN CURRENT (AMPS)

D,

I

0.4

0.28

0

VGS = 10 V

2.81.60.8

0.24

TJ = 100°C

TJ = 25°C

V

GATE−TO−SOURCE VOLTAGE (VOLTS)

GS,

TJ = −55°C

0.2

TJ = 25°C

TJ = −55°C

0.16

0.12

TJ = 25°C

0.08

0.04

DRAIN−TO−SOURCE RESISTANCE (W)

0

0 0.5 2 3.52.51.51340 0.5 2 3.52.51.5134

DS(on),

ID, DRAIN CURRENT (AMPS)

Figure 3. On−Resistance versus

Gate−to−Source V oltage

R

Figure 4. On−Resistance versus Drain Current

ID, DRAIN CURRENT (AMPS)

and Gate Voltage

1000
ID = 1 A
V

= 5 V

GS

VGS = 0 V

TJ = 150°C

1.6

1.4

1.2

1

0.8

0.6

−50 50250−25 75 125100

DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)

DS(on),

R

T

, JUNCTION TEMPERATURE (°C)

J

Figure 5. On−Resistance Variation with

Temperature

100

, LEAKAGE (nA)

DSS

I

10

1

150

175

04060302010 50

http://onsemi.com

3

TJ = 125°C

TJ = 100°C

DRAIN−TO−SOURCE VOLTAGE (VOLTS)

V

DS,

Figure 6. Drain−to−Source Leakage Current

versus Voltage

NTF3055L175

C, CAPACITANCE (pF)

)

t, TIME (ns)

I

, DRAIN CURRENT (AMPS)

5

8

700

VDS = 0 V

VGS = 0 V

TJ = 25°C

600

C

iss

500

400

C

rss

300

C

iss

200

C

100

0

10 10 155020525

V

V

GS

DS

oss

C

rss

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE

7

6

Q

5

Q

4

1

T

Q

2

3

2

1

, GATE−TO−SOURCE VOLTAGE (VOLTS

0

GS

V

05426

, TOTAL GATE CHARGE (nC)

Q

g

31

(VOLTS)

Figure 7. Capacitance Variation Figure 8. Gate−to−Source and

Drain−to−Source V oltage versus Total Charge

100

10

VDS = 30 V
I

= 2 A

D

= 5 V

V

GS

t

t

d(on)

r

t

f

t

d(off)

1.6

1.2

0.8

2

VGS = 0 V
T

= 25°C

J

V

GS

ID = 2 A
T

= 25°C

J

1

1 10 100 0.6 0.720.680.64 0.84

100

10

1

0.1

0.01

D

0.001

0.1 10 1001 25 125 15010075 17

RG, GATE RESISTANCE (W)

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

VGS = 15 V
SINGLE PULSE

10 ms

1 ms

TC = 25°C

R

LIMIT

DS(on)

THERMAL LIMIT
PACKAGE LIMIT

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

100 ms

10 ms

dc

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

0.4

, SOURCE CURRENT (AMPS)

S

I

0

0.76 0.8

VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

Figure 10. Diode Forward Voltage versus Current

70

60

50

40

30

20

AVALANCHE ENERGY (mJ)

10

, SINGLE PULSE DRAIN−TO−SOURCE

AS

0

E

50

TJ, STARTING JUNCTION TEMPERATURE (°C)

Figure 12. Maximum Avalanche Energy versus

Starting Junction Temperature

0.8

ID = 6 A

http://onsemi.com

4

100

0

r(t), EFFECTIVE TRANSIENT THERMAL

D = 0.5

0.2

10

0.1

0.05

1

0.01

RESISTANCE (NORMALIZED)

SINGLE PULSE

0.1

NTF3055L175

TEST TYPE > MIN PAD 1 OZ
(Cu Area = 0.272 sq in)
< DIE SIZE 56 X 56 MILS

= MIN PAD 1 OZ

R

q

JC

(Cu Area = 0.272 sq in) °C/W

0.010.00010.00001
t, TIME (s)

Figure 13. Thermal Response

P

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

1001010.10.001 100

2

ORDERING INFORMATION

Device Package Shipping

NTF3055L175T1 SOT−223 (TO−261)
NTF3055L175T1G SOT−223 (TO−261)

1000 / Tape & Reel

(Pb−Free)
NTF3055L175T3 SOT−223 (TO−261)
NTF3055L175T3G SOT−223 (TO−261)

(Pb−Free)

4000 / Tape & Reel

NTF3055L175T3LF SOT−223 (TO−261)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

†

http://onsemi.com

5

NTF3055L175

PACKAGE DIMENSIONS

SOT−223 (TO−261)

CASE 318E−04

ISSUE L

0.08 (0003)

H

e1

E

A1

D

b1

4

123

e

E

b

q

A

SOLDERING FOOTPRINT*

3.8

0.15

2.0

0.079

L1

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIMAMIN NOM MAX MIN

A1 0.02 0.06 0.10 0.001

b 0.60 0.75 0.89 0.024

b1 2.90 3.06 3.20 0.115

c 0.24 0.29 0.35 0.009

D 6.30 6.50 6.70 0.249

E 3.30 3.50 3.70 0.130
e 2.20 2.30 2.40 0.087

e1
L1 1.50 1.75 2.00 0.060

H

C

E

q

STYLE 3:

PIN 1. GATE

MILLIMETERS

1.50 1.63 1.75 0.060

0.85 0.94 1.05 0.033

6.70 7.00 7.30 0.264
0° 10° 0° 10°

− −

2. DRAIN

3. SOURCE

4. DRAIN

INCHES

NOM MAX

0.064 0.068

0.002 0.004

0.030 0.035

0.121 0.126

0.012 0.014

0.256 0.263

0.138 0.145

0.091 0.094

0.037 0.041

0.069 0.078

0.276 0.287

2.3

0.091

2.3

0.091

6.3

0.248

2.0

0.079

1.5

0.059

SCALE 6:1

ǒ

inches

mm

Ǔ

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA

Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center

2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051

Phone: 81−3−5773−3850

http://onsemi.com

ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder

For additional information, please contact your
local Sales Representative.

NTF3055L175/D

6