Datasheet ntf2955-p Datasheet

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Page 1

NTF2955, NTF2955P

Power MOSFET

−60 V, −2.6 A, Single P−Channel SOT−223

Features

• TMOS7 Design for low R

• Withstands High Energy in Avalanche and Commutation Modes

• Pb−Free Packages are Available

DS(on)

http://onsemi.com

Applications

• Power Supplies

• PWM Motor Control

• Converters

• Power Management

MAXIMUM RATINGS (T

Parameter

Drain−to−Source Voltage V

Gate−to−Source Voltage V

Continuous Drain Current (Note 1)

Power Dissipation (Note 1)

Continuous Drain Current (Note 2)

Power Dissipation (Note 2)

Pulsed Drain Current

Operating Junction and Storage Temperature TJ,

Single Pulse Drain−to−Source Avalanche Energy (V L = 10 mH, R

Lead Temperature for Soldering Purposes (1/8” from case for 10 seconds)

= 25 V, VG = 10 V, IPK = 6.7 A,

= 25 W)

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Unit

Junction−to−Tab (Drain) − Steady State (Note 2)

Junction−to−Ambient − Steady State (Note 1)

Junction−to−Ambient − Steady State (Note 2)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. When surface mounted to an FR4 board using 1 in. pad size (Cu. area = 1.127

[1 oz] including traces)

2. When surface mounted to an FR4 board using the minimum recommended pad size (Cu. area = 0.341 in

= 25°C unless otherwise noted)

Symbol Value Unit

DSS

Steady

State

Steady

State

Steady

State

)

TA = 25°C

TA = 85°C −2.0

TA = 25°C P

TA = 25°C

TA = 85°C −1.3

TA = 25°C P

tp = 10 ms

STG

EAS 225 mJ

−60 V

±20 V

−2.6

2.3 W

−1.7

1.0 W

−17 A

−55 to

175

260 °C

150

°C

°C/W

(BR)DSS

−60 V

DS(on)

145 mW @ −10 V

P−Channel

TYP

ID MAXV

−2.6 A

MARKING DIAGRAMS AND

PIN ASSIGNMENT

4 Drain

AYW

2955G

SOT−223

CASE 318E

STYLE 3

A = Assembly Location Y = Year W = Work Week G = Pb−Free Package

(Note: Microdot may be in either location)

Gate

2 Drain

AYW

2955PG

2 Drain

4 Drain

3 Source

ORDERING INFORMATION

Device Package Shipping

NTF2955T1 SOT−223 1000/Tape & Reel

NTF2955T1G SOT−223

(Pb−Free)

NTF2955PT1G SOT−223

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

1000/Tape & Reel

†

August, 2008 − Rev. 4

1 Publication Order Number:

NTF2955/D

Page 2

NTF2955, NTF2955P

ELECTRICAL CHARACTERISTICS (T

Parameter

=25°C unless otherwise stated)

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Drain−to−Source Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

(BR)DSS

(BR)DSS/TJ

DSS

GSS

= 0 V, I

= 0 V,

= −60 V

= 0 V, V

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

Drain−to−Source On Resistance R

GS(TH)

DS(on)

= VDS, ID = −1.0 mA −2.0 −4.0 V

= −10 V, I

VGS = −10 V, I

Forward Transconductance g

= −15 V, I

CHARGES AND CAPACITANCES

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate−to−Source Charge Q

Gate−to−Drain Charge Q

ISS

OSS

RSS

G(TOT)

G(TH)

= 0 V, f = 1.0 MHz,

= 10 V, V

= 1.5 A

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

d(ON)

Rise Time t

Turn−Off Delay Time t

d(OFF)

Fall Time t

= 10 V, V

= 1.5 A, R

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Charge Time t

Discharge Time t

Reverse Recovery Charge Q

= 0 V,

= 1.5 A

= 0 V, dIS/dt = 100 A/ms,

= 1.5 A

3. Pulse Test: pulse width ≤ 300ms, duty cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperatures.

= −250 mA

−60 V

66.4 mV/°C

= 25°C −1.0 mA

= 125°C −50

= ±20 V ±100 nA

= −0.75 A 145 170

= −1.5 A 150 180

= −2.4 A 154 185

= −0.75 A 1.77 S

492

= 25 V

165

= 30 V,

14.3

1.2

2.3

5.2

DD G

= 25 W

= 25 V,

= 9.1 W

7.6

= 25°C −1.10 −1.30

= 125°C −0.9

0.139 nC

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NTF2955, NTF2955P

TYPICAL PERFORMANCE CURVES (T

DRAIN CURRENT (AMPS)

−I

−V

DRAIN−TO−SOURCE VOLTAGE (VOLTS)

DS,

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

0.4 VGS = −10 V

0.3

0.2

0.1

VGS = −10 V to −7 V

VGS = −6 V

TJ = 25 °C

VGS = −5.5 V

VGS = −5 V

VGS = −4.5 V

VGS = −3.8 V

456789

TJ = 125°C

TJ = 25°C

TJ = −55°C

= 25°C unless otherwise noted)

≥ 10 V

TJ = 25°C

TJ = −55°C

TJ = 125°C

DRAIN CURRENT (AMPS)

−I

1021

210846

−V

GATE−TO−SOURCE VOLTAGE (VOLTS)

GS,

0.25

0.225

TJ = 25°C

0.2

0.175 VGS = −10 V

0.15

0.125

VGS = −15 V

0.1

DRAIN−TO−SOURCE RESISTANCE (W)

DS(on),

−I

DRAIN CURRENT (AMPS)

Figure 3. On−Resistance versus Drain Current

and Temperature

ID = −1.5 A

1.8 V

= −10 V

1.6

1.4

1.2

0.8

0.6

0.4

0.2

−50 50250−25 75 125100

DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)

DS(on),

, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

0.075

DRAIN−TO−SOURCE RESISTANCE (W)

0.05

106

DS(on),

−ID, DRAIN CURRENT (AMPS)

1086

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

1000

VGS = 0 V

TJ = 150°C

100

TJ = 125°C

45352515 55

150

, LEAKAGE (nA)

DSS

−I

54060302010 50

−V

DRAIN−TO−SOURCE VOLTAGE (VOLTS)

DS,

Figure 6. Drain−to−Source Leakage Current

versus Voltage

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Page 4

NTF2955, NTF2955P

TYPICAL PERFORMANCE CURVES (T

1200

1000

VDS = 0 V

iss

VGS = 0 V

800

rss

600

400

C, CAPACITANCE (pF)

200

10 10 155020525

−V

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 7. Capacitance Variation

1000

VDD = −25 V I

= −1.5 A

= −10 V

TJ = 25°C

iss

oss

rss

= 25°C unless otherwise noted)

, GATE−TO−SOURCE VOLTAGE (VOLTS)

0108416

, TOTAL GATE CHARGE (nC)

Figure 8. Gate−to−Source and

Drain−to−Source Voltage versus Total Charge

VGS = 0 V T

= 25°C

ID = −1.5 A T

= 25°C

1412

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

100

d(off)

t, TIME (ns)

d(on)

1 10 100 0 0.50.25

, SOURCE CURRENT (AMPS)

−I

RG, GATE RESISTANCE (W)

Figure 9. Resistive Switching Time Variation

Figure 10. Diode Forward Voltage versus Current

versus Gate Resistance

100

VGS = −20 V SINGLE PULSE T

= 25°C

10 ms

100 ms

1 ms

10 ms

0.1

, DRAIN CURRENT (AMPS)

−I

THERMAL LIMIT

DS(on)

LIMIT

PACKAGE LIMIT

0.01

0.1 10 1001 25 125 15010075 17550

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

250

200

150

100

AVALANCHE ENERGY (mJ)

, SINGLE PULSE DRAIN−TO−SOURCE

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

0.75 1

1.25 1.5

−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

IPK = −6.7 A

TJ, STARTING JUNCTION TEMPERATURE (°C)

Figure 12. Maximum Avalanche Energy versus

Starting Junction Temperature

1.75

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Page 5

NTF2955, NTF2955P

PACKAGE DIMENSIONS

SOT−223 (TO−261)

CASE 318E−04

ISSUE M

0.08 (0003)

123

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIMAMIN NOM MAX MIN

A1 0.02 0.06 0.10 0.001

b 0.60 0.75 0.89 0.024

b1 2.90 3.06 3.20 0.115

c 0.24 0.29 0.35 0.009 D 6.30 6.50 6.70 0.249 E 3.30 3.50 3.70 0.130 e 2.20 2.30 2.40 0.087

e1 L1 1.50 1.75 2.00 0.060 H

STYLE 3:

PIN 1. GATE

MILLIMETERS

1.50 1.63 1.75 0.060

0.85 0.94 1.05 0.033

6.70 7.00 7.30 0.264 0° 10° 0° 10°

− −

2. DRAIN

3. SOURCE

4. DRAIN

INCHES

NOM MAX

0.064 0.068

0.002 0.004

0.030 0.035

0.121 0.126

0.012 0.014

0.256 0.263

0.138 0.145

0.091 0.094

0.037 0.041

0.069 0.078

0.276 0.287

SOLDERING FOOTPRINT*

3.8

0.15

2.0

0.079

2.3

0.091

2.3

0.091

6.3

0.248

2.0

0.079

1.5

0.059

SCALE 6:1

inches

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NTF2955/D