Datasheet NTE909D, NTE909 Datasheet (NTE)

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NTE909 & NTE909D
Integrated Circuits
Operational Amplifier
Description:
These devices are monolithic operational amplifiers intended for general–purpose applications. Op­eration is completely specified over the range of voltages commonly used for these devices. The de­sign, in addition to providing high gain, minimizes both offset voltages and bias currents. Further, the class–B output stage gives a large output capability with minimum power drain.
The fact that the amplifiers are built on a single silicon chip provides low offset and temperature drift at minimum cost. It also ensures negligble drift due to temperature gradients in the vicinity of the am­plifier.
Absolute Maximum Ratings:
Supply Voltage ±18V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (Note 1) 250mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Differential Input Voltage ±10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Voltage ±10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output Short–Circuit Duration (T
Storage Temperature Range –65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range 0° to +70°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (Soldering, 10 seconds) +300°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25°C) 5 seconds. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
Note 1 For operating at elevated temperatures, the device must be derated based on a 100°C maxi-
mum junction temperature and a thermal resistance 150°C/W junction to ambient or 45°C/W, junction to case for the metal can package.
Electrical Characteristics:
(0°C ≤ TA = ≤ +70°C, ±9V ≤ VS ≤ ±15V, C1 = 5000pF, R1 = 1.5k, C2 = 200pF and R2 = 51Ω unless otherwise specified)
Parameter Test Conditions Min Typ Max Unit
Input Offset Voltage TA = +25°C, RS ≤ 10kΩ – 2.0 7.5 mV Input Bias Current TA = +25°C – 300 1500 nA
TA = T
Input Offset Current TA = +25°C – 100 500 nA
TA = T TA = T
MIN
MIN MAX
– 0.36 2.0 µA
– 75 400 nA – 125 750 nA
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Electrical Characteristics (Cont’d): (0°C ≤ TA = ≤ +70°C, ±9V ≤ VS ≤ ±15V, C1 = 5000pF,
R1 = 1.5k, C2 = 200pF and R2 = 51Ω unless otherwise specified)
Parameter Test Conditions Min Typ Max Unit
Input Resistance TA = +25°C 50 250 – kΩ
TA = T
MIN
50 250 – kΩ Output Resistance TA = +25°C – 150 – Ω Supply Current TA = +25°C, VS = ±15V – 2.6 6.6 mA Transient Response Risetime VIN = 20mV, CL ≤ 100pF, TA = +25°C – 0.3 1.0 µs Transient Response Overshoot – 10 30 % Slew Rate TA = +25°C – 0.25 – V/µs Average Temperature Coefficient
of Input Offset Voltage
RS = 50Ω, TA = +25°C to T RS = 50Ω, TA = +25°C to T
Large Signal Voltage VS = ±15V, RL ≥ 2kΩ, V
MAX MIN
= ±10V 15 45 – V/mV
OUT
– 6.0 – µV/°C – 12 – µV/°C
Output Voltage Swing VS = ±15V, RL = 10kΩ ±12 ±14 – V
VS = ±15V, RL = 2kΩ ±10 ±13 – V Input Voltage Range VS = ±15V ±8 ±10 – V Common Mode Rejection Ratio RS ≥ 10kΩ 65 90 – dB Supply Voltage Rejection Ratio RS ≥ 10kΩ – 25 200 µV/V
Pin Connection Diagram
Output
V (+)
Input Freq Comp B
NTE909
(Top View)
Output Freq Comp
6
7
8
Input Freq Comp A
NTE909D
5
1
V (–)
4
3
Non–Invert Input
2
Invert Input
Input Freq Comp A
N.C. N.C.
Invert Input
1 2
3 4 5Non–Invert Input 6V (–) 7N.C.
N.C.
14
N.C.
13
Input Freq Comp B
12 11
V (+)
10 Output
Output Freq Comp
9 8 N.C.
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.177 (4.5)
Max
.492
(12.5)
Min
45°
.370 (9.39) Dia Max
.335 (8.52) Dia Max
.018 (0.45) Dia Typ
3
2
1
8
4
5
6
7
.200 (5.06)
Dia
14
.032 (0.82)
8
1
.785 (19.95)
Max
.100 (2.45) .099 (2.5) Min
.600 (15.24)
7
.300
(7.62)
.200 (5.08)
Max
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