Datasheet NTE7141 Datasheet (NTE)

Page 1
NTE7141
Integrated Circuit
Dual BIMOS Operational Amplifier
w
/MOSFET Input, Bipolar Output
Description:
The NTE7141 is a dual, operational amplifier in an 8–Lead Mini–DIP type package that combines the advantages of MOS and bipolar transistors on the same monolithic chip. The gate–protected MOS­FET (PMOS) input transistors provide high input impredance and a wide common–mode input volt­age range (typically to 0.5V below the negative supply rail). The bipolar output transistors allow a wide output voltage swing and provide a high output current capability.
Features:
D Internally Compensated D MOSFET Input Stage:
Very High Input Impedance Very Low Input Current Wide Common–Mode Input Voltage Range Rugged Input Stage – Bipolar Diode Protected
D Directly Replaces Industry Type 1458 in Most Applications D Operation From 4V–to–36V Single or Dual Supplies D Characterized for ±15V Operation for TTL Supply Systems with Operation down to 4V D Wide Bandwidth D High Voltage–Follower Slew Rate D Output Swings to Within 0.5V of Negative Supply at V+ = 5V, V– = 0
Applications:
D Ground–Referenced Single–Supply Amplifiers in Automobile and Portable Instrumentation D Sample and Hold Amplifiers D Long–Duration Timers/Multivibrators (Microseconds – Minutes – Hours) D Photocurrent Instrumentation D Active Filters D Intrusion Alarm Systems D Comparators D Instrumentation Amplifiers D Function Generators D Power Supplies
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Absolute Maximum Ratings:
DC Supply Voltage (Between V+ and V– Terminals) 36V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Voltage Range 4 to 36V or ±2 to ±18V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Differential–Mode Input Voltage ±8V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Common–Mode DC Input Voltage (V+ +8V) to (V– –0.5V). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input–Terminal Current 1mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Device Dissipation, P
D
630mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Linearly Above +55°C 6.67mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T Storage Temperature Range, T
opr
stg
Lead Temperature (During Soldering, 1/16” from case, 10sec max), T
L
–40° to +85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+265°C. . . . . . . . . . . . . . . . .
Output Short–Circuit Duration (Note 1) Unlimited. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Short circuit may be applied to GND or to either supply. Temperature and/or supply voltages
must be limited to keep dissipation within maximum rating.
Electrical Characteristics: (V+ = +15V, V– = –15V unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Input Offset Voltage |VIO| TA = +25°C – 5 15 mV
TA = –40° to +85°C – 10 – mV
Input Offset Current |IIO| TA = +25°C – 0.5 30 pA
TA = +85°C – 32 – pA
Input Current I
Large–Signal Voltage Gain A
Common–Mode Rejection Ratio CMRR TA = +25°C – 32 320 µV/V
Common–Mode Input–Voltage
Range
V
ICR
TA = +25°C – 10 50 pA
I
TA = +85°C – 640 – pA Note 2 TA = +25°C 20k 100k – V/V
OL
86 100 – dB
TA = –40° to +85°C – 63k – V/V
– 96 – dB
70 90 – dB
TA = –40° to +85°C – 32 – µV/V
– 90 – dB
TA = +25°C –15 –15.5
to
+12.5
TA = –40° to +85°C – –15
to
+12.3
+11 V
– V
Power Supply Rejection Ratio ∆VIO/∆V TA = +25°C – 100 150 µV/V
PSSR 76 80 – dB
∆VIO/∆V TA = –40° to +85°C – 150 – µV/V
PSSR – 76 – dB
Note 2. VO = 26V
, +12V, –14V and RL = 2kΩ.
P–P
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Electrical Characteristics (Cont’d): (V+ = +15V, V– = –15V unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Maximum Output Voltage VOM+ TA = +25°C, RL = 2kΩ +12 +13 – V
VOM– –14 –14.4 – V
TA = +25°C, Note 3 0.4 0.13 – V VOM+ TA = –40° to +85°C, RL = 2kΩ – +12.4 – V VOM– – –14.2 – V
Supply Current, For Both Amps I+ TA = +25°C – 8 12 mA
TA = –40° to +85°C – 8.4 – mA
Total Device Dissipation P
TA = +25°C – 240 360 mW
D
TA = –40° to +85°C – 252 – mW
Temperature Coefficient of
∆VIO/∆T TA = –40° to +85°C – 15 – µA/°C
Input Offset Voltage Input Resistance R Input Capacitance C Output Resistance R Equivalent Wideband Input Noise
e
Voltage RS = 100Ω
TA = +25°C – 1.5 – TΩ
I
TA = +25°C – 4 – pF
I
TA = +25°C – 60 – Ω
O n
TA = +25°C,
f = 1kHz – 40 – nV/√Hz f = 10kHz – 12 – nV/√Hz
Short–Circuit Current to Opposite
Supply
Source IOM+ TA = +25°C – 40 mA
Sink IOM– – 11 – mA
Gain–Bandwidth Product f
TA = +25°C – 4.5 – MHz
T
Slew Rate SR TA = +25°C – 9 – V/µs Transient Response:
Rise Time t
TA = +25°C, RL = 2kΩ, CL = 100pF – 0.08 – µs
r
Overshoot – 10 – %
Setting Time at 10V
1mV t
10mV
P–P
TA = +25°C, RL = 2kΩ, CL = 100pF,
s
Voltage Follower
– 4.5 – µs – 1.4 – µs
Crosstalk CT TA = +25°C, f = 1kHz – 120 – dB
Note 3. V+ = 5V, V– = GND, I
= 200µA.
Sink
Electrical Characteristics: (TA = +25°C, V+ = +5V, V– = –5V unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Input Offset Voltage |VIO| – 5 – mV Input Offset Current |IIO| – 0.1 – pA Input Current I Input Resistance R Large–Signal Voltage Gain A
I
I
OL
Common–Mode Rejection Ratio CMRR – 32 320 µV/V
– 2 – pA – 1 – TΩ – 100k – V/V – 100 – dB
70 90 – dB
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Electrical Characteristics (Cont’d): (TA = +25°C, V+ = +5V, V– = –5V unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Common–Mode Input–Voltage Range
Power Supply Rejection Ratio
Maximum Output Voltage
Maximum Output Current:
Source IOM+ – 20 – mA
Sink IOM– – 1 – mA Slew Rate SR – 7 – V/µs Gain–Bandwidth Product f Supply Current I+ – 4 – mA Device Dissipation P
V
ICR
∆VIO/∆V – 31.6 – µV/V
PSSR – 90 – dB
VOM+ – 3.0 – V VOM– – 0.3 – V
T
D
Pin Connection Diagram
Output A
V+1
8
– –0.5 – V – +2.6 – V
– 4.5 – MHz
– 20 – mW
Invert Input A
Non–Invert Input A
V–
85
14
.390 (9.9)
Max
2 3
4
7
Output B
6
Invert Input B
5
Non–Invert Input B
.260 (6.6)
(7.62)
.155
(3.93)
.300
.100 (2.54)
.145 (3.68)
.300 (7.62)
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