Datasheet NTE62 Specification

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NTE62
Silicon NPN Transistor
High Voltage, Horizontal Deflection Output for TV
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, V Collector–Emitter Voltage, V Emitter–Base Voltage, V Collector Current, I
C
CBO
CEO
EBO
Continuous 3A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 7A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation (T Operating Junction Temperature, T Storage Temperature Range, T
Electrical Characteristics
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Emitter Cutoff Current I
= +25°C), P
C
j
stg
: (TA = +25°C unles otherwise specified)
900V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
50W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CBO
I
CEO EBO
VCB = 1000V, IE = 0 50 µA VCB = 2500V, IE = 0 1.0 mA VCE = 900V, IB = 0 10 mA
VEB = 6V, IC = 0 1.0 mA DC Current Gain h Collector–Emitter Saturation Voltage V Base–Emitter Saturation Voltage V Transition Frequency t
CE(sat)IC BE(sat)IC
FE
f
VCE = 10V, IC = 1.5A 3 15
= 1.5A, IB = 0.5A 10 V = 1.5A, IB = 0.5A 1.25 V
IC = 1.5A 1.0 µs
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.135 (3.45) Max
.350 (8.89)
.215 (5.45)
.430
(10.92)
.875 (22.2)
Dia Max
Seating Plane
.040 (1.02).312 (7.93) Min
E
1.187 (30.16)
.665
(16.9)
.156 (3.96) Dia (2 Holes)
.188 (4.8) R Max
.525 (13.35) R Max
CB
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