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NTE5688, NTE5689, NTE5690
TRIAC - 40Amp,
Absolute Maximum Ratings:
Repetitive Peak Off-State Voltage (Gate Open, TJ = +110°C, Note 1), V
NTE5688 200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5689 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5690 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS On-State Current (T
Non-Repetitive Peak Surge On-State Current (One-Cycle, at 50Hz or 60Hz), I
Peak Gate-Trigger Current (for 3μs Max), I
Peak Gate-Power Dissipation (I
Average Gate-Power Dissipation, P
Operating Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction-to-Case, R
= +80°C, Conduction Angle = 360°), I
C
GTM
stg
GT
opr
≤ I
GTM
G(AV)
), P
thJC
GM
1
/2” Press Fit
T(RMS)
DRM
TSM
40A. . . . . . . . . . . . . . . . . . .
400A. . . . . . . .
12A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
40W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
750mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
-40° to +110°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
-40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.8°C/W Typ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Peak Off-State Current, I
(Gate Open, TC = +110°C, V
Maximum On-State Voltage (T
DC Holding Current (Gate Open, T
(At Specified Case Temperature)
DRM
= Max Rating, Note 1) 1mA Max. . . . . . . . . . . . . . . . . . . . . .
DRM
= +25°C, IT = 40A, Note 1), V
C
= +25°C, Note 1), I
C
TM
Hold
Critical Rate-of-Rise of Off-State Voltage, Critical dv/dt
(V
= V
D
, Gate Open, TC = +110°C, Note 1) 200V/μs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DRM
Critical rate-of-Rise of commutation Voltage, Commutating dv/dt
(V
= V
D
DC Gate-Trigger Current (V
, IT = 40A, Gate Unenergized, TC = +80°C, Note 1) 3V/μs. . . . . . . . . . . . . . . . . . .
DRM
= 12VDC, RL = 30Ω, TC = +25°C), I
D
(T2+ Gate +, T2- Gate -) Quads I and III 100mA Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(T
+ Gate -, T2- Gate +) Quads II and IV 150mA Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2
DC Gate-Trigger Voltage (V
Gate-Controlled Turn-On Time, T
= 12VDC, RL = 30Ω, TC = +25°C), V
D
gt
(VD = 400V, IGT = 200mA, tR = 0.1μs, IT = 10A (Peak), TC = +25°C) 3μs. . . . . . . . . . . . . . . . .
Note 1. All values apply in either direction.
GT
GT
2.0V Max. . . . . . . . . . . . . . . . . . . .
60mA Max. . . . . . . . . . . . . . . . . . . . . . .
2.5V Max. . . . . . . . . . . . . . . .
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MT
MT
Gate
2
1
.610 (15.49) Max
.650
(16.5)
Max
.508 (12.9) Max
.385
(9.76)
Max
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