Datasheet NTE542 Specification

Page 1
NTE542
High Voltage Silicon Rectifier, 350mA
Features:
D Controlled Avalanche Characteristic Combined with the Ability to Dissipate Reverse Power D Low Forward Voltage Drop D Typical Reverse Current Less Than 1A D High Overload Surge Capability D High Temperature Soldering Guaranteed: +260C/10 sec at Terminals
Maximum Recurrent Peak Reverse Voltage, V Maximum RMS Voltage, V Maximum DC Blocking Voltage, V
RMS
15kV................................................
DC
Maximum Average Forward Rectified Current (T Peak Forward Surge Current, I
FSM
(8.3ms Single Half Sine−Wave Superimposed on Rated Load), I Maximum Instantaneous Forward Voltage (I Maximum DC Reverse Current (V
= 15kV), I
R
Operating Junction Temperature Range, T Storage Temperature Range, T
40 to +130C..........................................
stg
= 350mA), V
F
R
40 to +130C.................................
J
: (TA = +25C unless otherwise specified)
15kV....................................
RRM
= +55C), I
A
F
350mA.....................
F(AV)
30A................
FSM
10500V...................................................
15V..............................
5.0A.......................................
Note 1. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current
by 20%.
Positive Terminal has
1.375 (34.92)
mounting hole for No. 8 Screw
.900
(22.86)
.500
(12.7)
.500 (12.7)
Rev. 5−13
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