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NTE344
Silicon NPN Transistor
RF Power Output
PO = 30W @ 175MHz
Absolute Maximum Ratings:
Collector−Emitter Voltage, V
Collector−Base Voltage, V
Emitter−Base Voltage, V
Continuous Collector Current, I
Collector Power Dissipation, P
Operating Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction−to−Case, R
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Units
Collector−Base Breakdown Voltage
Emitter−Base Breakdown Voltage V
Collector−Emitter Breakdown Voltage V
Collector Cut−Off Current I
Emitter Cutoff Current I
DC Current Gain h
Amplifier Power Out P
Collector Efficiency η
CBO
EBO
CEO
C
C
j
stg
V
(BR)CBOIC
(BR)EBOIE
(BR)CEOIC
CBO
EBO
FE
O
C
thJC
= 10mA, IE = 0 35 − − V
= 10mA, IC = 0 4 − − V
= 100mA, RBE = ∞ 17 − − V
VCB = 25V, IE = 0 − − 2 mA
VEB = 3V, IC = 0 − − 1 mA
VCE = 10V, IC = 0.2A 10 50 180 −
VCC 13.5V, f = 175MHz, Pin = 6W 28 32 − W
VCC = 13.5V, f = 175MHz, Pin = 6W 60 70 − %
17V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
35V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−65° to +175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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.157 (4.0)
.300 (7.62) Min
0.39 (1.0) R
.276
(7.0)
Max
.063 (1.6) R
.205 (5.2) Max
E
6.46 (16.4) Max
.709 (18.0)
C
B
E
.551
(14.0)
.100
(2.79)
.276 (7.0) Max
.118 (3.0)
.076 (1.93)
.866 (22.0)
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