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NTE341
Silicon NPN Transistor
RF Power Output
Description:
The NTE341 is a epitaxial silicon NPN transistor designed primarily for VHF mobile communications.
The chip of this transistor is mounted so as to isolate the collector lead and ground the emitter lead
for high gain performance.
Features:
D 175MHz
D 12.5 Volts
D P
D G
D Grounded Emitter
= 4W Minimum
OUT
= 12dB
P
Absolute Maximum Ratings:
Collector−Base Voltage, V
Collector−Emitter Voltage, V
Collector−Emitter Voltage, V
Emitter−Base Voltage, V
Collector Current, I
EBO
C
Total Device Dissipation, P
Operating Junction Temperature, T
Storage Temperatures Range, T
(TC = +25°C unless otherwise specified)
CBO
CEO
CES
4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
tot
j
stg
Thermal Resistance, Junction−to−Case, R
Electrical Characteristics
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector−Emitter Breakdown Voltage V
Emitter−Base Breakdown Voltage V
Collector Cutoff Current I
ON Characteristics
: (TC = +25°C unless otherwise specified)
(BR)CEOIC
V
(BR)CESIC
(BR)EBOIC
CBO
−65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
= 10mA, IB = 0 18 − − V
= 5mA, VBE = 0 36 − − V
= 0, IE = 1mA 4 − − V
VCB = 15V, IE = 0 − − 250 µA
21.9°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
36V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
18V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
36V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
640mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Current Gain h
Dynamic Characteristics
Output Power P
Common−Emitter Amplifier Power Gain G
Output Capacitance C
FE
OUT
PE
ob
VCE = 5V, IC = 50mA 10 − 100
VCE = 12.5V, f = 175MHz 4 − − W
VCE = 12.5V, f = 175MHz 12 − − dB
VCE = 15V, f = 1MHz − 180 230 pF
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Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Impedance Data
Input Impedance Z
Clamping Impedance Z
.260
(6.6)
Max
in
cl
PIN= 200mW,
VCC = 12.6V
f = 136MHz 3.0 − j3.8
f = 155MHz 4.0 − j2.0
f = 175MHz 4.3 − j5.8
f = 136MHz 12.8 − j11
f = 155MHz 11 − j14.8
f = 175MHz 13 − j20
.370 (9.39) Dia Max
.355 (9.03) Dia Max
(12.7)
Collector
.500
Min
.018 (0.45) Dia
Base
Emitter/Case
45°
.031 (.793)
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