Page 1
NTE335 & NTE336
Silicon NPN Transistor
RF Power Output
Description:
The NTE335 and NTE336 are silicon NPN RF power transistors designed for power amplifier applications
in industrial, commercial and amateur radio equipment to 30MHz.
Features:
D Specified 12.5V, 30MHz Characteristics:
Output Power = 80W
Minimum Gain = 12dB
Efficiency = 50%
D Available in Two Different Package Designs:
NTE335 (W52N, Flange Mount)
NTE336 (T93D, Stud Mount)
Absolute Maximum Ratings:
Collector−Emitter Voltage, V
Collector−Base Voltage, V
Emitter−Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (TC = +25°C), P
CEO
CBO
EBO
C
D
Derate above 25°C 1.43W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
Thermal Resistance, Junction−to−Case, R
−65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
25V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
45V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
20A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
250W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.7°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector−Emitter Breakdown Voltage V
Emitter−Base Breakdown Voltage V
(BR)CEOIC
V
(BR)CESIC
(BR)EBOIE
= 100mA, IB = 0 18 − − V
= 50mA, VBE = 0 36 − − V
= 10mA, IC = 0 4 − − V
Page 2
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
30
f = 30MHz
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics
DC Current Gain h
FE
IC = 5A, VCE = 5V 10 − 150
Dynamic Characteristics
Output Capacitance C
ob
VCB = 15V, IE = 0,
− − 250 pF
f = 1MHz
Functional Tests
Common−Emitter Amplifier Power Gain G
Collector Efficiency η
Series Equivalent Input Impedance Z
Series Equivalent Output Impedance Z
pe
in
out
VCC = 12.5V,
P
= 80W,
OUT
f =
MHz
12 − − dB
50 − − %
− .938 − j.341 − Ω
− 1.16 − j.201 − Ω
Parallel Equivalent Input Impedance − − 1.06Ω
1817pF
Parallel Equivalent Output Impedance − − 1.19Ω
777pF
NTE335 NTE336
−
−
.250
(6.35)
.225 (5.72)
.480 (12.1) Dia
.065
(1.68)
.725 (18.42)
EC
BE
1.061 (25.95)
Ceramic Cap
.975 (24.77)
.127 (3.17) Dia
(2 Holes)
.260
(6.6)
.095 (2.42)
.230
(5.84)
.100 (2.54)
8−32−NC−3A
Wrench Flat
1.040 (26.4) Max
.520 (13.2)
C
EE
B
.385
(9.8)
Dia
.168 (4.27)
.005 (0.15)
.750
(19.05)
Loading...