
NTE3311
Insulated Gate Bipolar Transistor
N–Channel Enhancement Mode,
High Speed Switch
Features:
D High Input Impedance 
D High Speed 
D Low Saturation Voltage 
D Enhancement Mode
Applications:
D High Power Switching 
D Motor Control
Absolute Maximum Raings: (TA = +25°C unless otherwise specified) 
Collector–Emitter Voltage, V
Gate–Emitter Voltage, V 
Collector Current, I
C
DC 25A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 
Pulse (1ms) 50A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 
Collector Power Dissipation (TC = +25°C), P 
Operating Junction Temperature, T 
Storage Temperature Range, T
CES
GES
C
J
stg
600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 
±20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 
150W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Gate Leakage Current I 
Collector Cutoff Current I 
Collector–Emitter Breakdown Voltage V 
Gate–Emitter Cutoff Voltage V 
Collector–Emitter Saturation Voltage V 
Input Capacitance C 
Rise Time t 
Turn–On Time t 
Fall Time t 
Turn–Off Time t
(BR)CESIC
GE(off)IC
CE(sat)IC
GES 
CES
ies
on
off
VGE = ±20V, VCE = 0 – – ±500 nA 
VCE = 600V, VGE = 0 – – 1.0 mA
 = 2mA, VGE = 0 600 – – V 
 = 25mA, VCE = 5V 3.0 – 6.0 V
 = 25A, VGE = 15V – 3.0 4.0 V 
VCE = 10V, VGE = 0, f = 1MHz – 1400 – pF 
VCC = 300V
r
f
– 0.30 0.60 µs 
– 0.40 0.80 µs 
– 0.15 0.35 µs 
– 0.50 1.00 µs