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NTE3089
Optoisolator
AC Input, Silicon NPN
Phototransistor Output
Description:
The NTE3089 consists of two gallium arsenide LEDs connected in inverse parallel and coupled with
a silicon phototransistor in a 6–Lead DIP type package.
Features:
D AC or Polarity Insensitive Inputs
D Fast Switching Speeds
D Built–In Reverse Polarity Input Protection
D High Isolation Voltage
D High Isolation Resistance
D I/O Compatible with Integrated Circuits
Absolute Maximum Ratings
: (TA = +25°C, unless otherwise specified)
Infrared Emitting Diode (LED)
Continuous Forward Current, I
F
Peak Forward Current (Pulse Width = 1µs, 330pps), I
Power Dissipation (T
= +25°C, Note 1), P
A
D
Derate Above 25°C 1.33mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Phototransistor
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Power Dissipation (T
= +25°C), P
A
CEO
CBO
EBO
C
D
Derate Above 25°C 4.0mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (T
= +25°C, Note 1), P
A
D
Derate Above 25°C 6.7mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device
Steady–State Isolation Voltage (Input–to–Output)
Peak 1500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS 1060V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Surge Isolation Voltage (Input–to–Output)
Peak 2500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS 1770V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
Storage Temperature Range, T
Lead Temperature (During Soldering for 10sec), T
Note 1. T
indicates Collector lead temperature 1/32” from case.
C
J
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
L
60mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
F
±1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
70V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
300mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
500mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+250°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Infrared Emitting Diode (LED)
Forward Voltage V
Capacitance C
IF = ±10mA – – 1.5 V
F
VR = 0, f = 1MHz – – 100 pF
J
Phototransistor
Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Dark Current I
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
CEO
= 100µA, IF = 0 70 – – V
= 10mA, IF = 0 30 – – V
= 100µA, IF = 0 5 – – V
VCE = 10V, IF = 0 – – 100 nA
Coupled
DC Current Transfer Ratio CTR VCE = 10V, IF = ±10mA 20 – – %
Collector–Emitter Saturation Voltage V
Isolation Resistance R
CE(sat)IC
(I–O)
= 0.5mA, IF = ±10mA – – 0.4 V
V
= 500V, Note 2 100
(I–O)
–
–
GΩ
Note 2. Tests of Input–to–Output isolation current r esistance, a nd c apacitance a re p erformed w ith t he
input t erminals ( diode) s horted t ogether a nd t he o utput terminals (transistors) s horted together.
Pin Connection Diagram
LED 1 Anode/
LED 2 Cathode
1
6
Base
LED 1 Cathode/
LED 2 Anode
.070 (1.78) Max
.200 (5.08)
Max
2
3N.C.
546
123
.350 (8.89)
Max
.260
(6.6)
Max
.350
(8.89)
Max
Collector
5
Emitter
4
.300 (7.62)
.085 (2.16) Max
.100 (2.54)
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