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NTE2975
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Features:
D Advanced Process Technology
D Ultra Low On–State Resistance
D Dynamic dv/dt Rating
D +175°C Operating Temperature
D Fast Switching
D Fully Avalanche Rated
Absolute Maximum Ratings:
Drain Current, I
Continuous (VGS = 10V)
Pulse (Note 2) 180A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (TC = +25°C), P
Derate above +25°C 0.71W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate–Source Voltage, V
Avalanche Current (Note 2), I
Repetitive Avalanche Energy (Note 2), E
Single Pulse Avalanche Energy (Note 3, Note 4), E
Peak Diode Recovery (Note 5), dv/dt 5.0V/ns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
Lead Temperature (During Soldering, 1.6mm from case, 10sec max), T
Maximum Thermal Resistance, Junction–to–Case, R
Typical Thermal Resistance, Case–to–Sink (Flat, greased surface), R
Maximum Thermal Resistance, Junction–to–Ambient, R
D
TC = +25°C (Note 1) 53A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TC = +100°C 37A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
GS
AR
AR
AS
J
stg
L
thJC
thCS
thJA
–55° to +175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
107W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
28A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
152mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+300°C. . . . . . . . . . . . . . .
1.4°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.5°C/W. . . . . . . . . . . . .
62°C/W. . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Calculated continuous current based on maximum allowable junction temperature. Package
limitation current is 39A.
Note 2. Repetitive rating; pulse width limited by maximum junction temperature.
Note 3. Starting TJ = +25°C, L = 389µH, RG = 25Ω, IAS = 28A.
Note 4. This is a calculated value limited to TJ = +175°C.
Note 5. ISD ≤ 28A, di/dt ≤ 220A/µs, VDD ≤ V
(BR)DSS
, TJ ≤ +175°C
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Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Drain–Source Breakdown Voltage V
Breakdown Voltage Temperature
Coefficient
Static Drain–Source On–Resistance R
Gate Threshold Voltage V
(BR)DSSVGS
∆V
(BR)DSS
∆T
DS(on)
GS(th)
Forward Transconductance g
Drain–Source Leakage Current I
Gate–Source Forward Leakage Current I
Total Gate Charge Q
Gate–Source Charge Q
Gate–Drain (“Miller”) Charge Q
Turn–On Delay Time t
Rise Time t
Turn–Off Delay Time t
Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Source–Drain Ratings and Characteristics
fs
DSS
GSS
G
GS
GD
d(on)
r
d(off)
f
D
S
iss
oss
rss
= 0V, ID = 250µA 55 – – V
Reference to +25°C, ID = 1mA – 0.057 – V/°C
J
VGS = 10V, ID = 28A, Note 6 – – 16.5 mΩ
VDS = VGS, ID = 250µA 2.0 – 4.0 V
VDS = 25V, ID = 28A, Note 6 19 – – S
VDS = 55V, VGS = 0 – – 25 µA
VDS = 44V, VGS = 0, TJ = +150°C – – 250 µA
VGS = 20V – – 100 nA
VGS = –20V – – –100 nA
VGS = 10V, ID = 28A, VDS = 44V
– – 72 nC
– – 11 nC
– – 26 nC
VGS = 10V, VDD = 28V, ID = 28A,
RG = 12Ω
– 14 – ns
– 76 – ns
– 52 – ns
– 57 – ns
Between lead, .250 (6mm) from
package and center of die contact
VDS = 25V, VGS = 0, f = 1MHz
– 4.5 – nH
– 7.5 – nH
– 1696 – pF
– 407 – pF
– 110 – pF
Continuous Source Current (Body Diode) I
Pulsed Source Current (Body Diode) I
Diode Forward Voltage V
S
SM
F(S–D)TJ
Note 2 – – 180 A
= +25°C, IS = 28A, VGS = 0,
– – 53 A
– – 1.3 V
Note 6
Reverse Recovery Time t
Reverse Recovery Charge Q
Forward Turn–On Time t
on
rr
TJ = +25°C, IF = 28A,
di/dt = 100A/µs, Note 6
rr
Intristic turn–on time is negligible
– 67 101 ns
– 208 312 nC
(turn–on is dominated by LS + LD)
Note 2. Repetitive rating; pulse width limited by maximum junction temperature.
Note 6. Pulse width ≤ 400µs, duty cycle ≤ 2%.
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.147 (3.75)
Dia Max
.070 (1.78) Max
.420 (10.67)
Max
.110 (2.79)
Isol
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
Gate
.100 (2.54)
Source
Drain
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