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NTE2967
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Applications:
D Motor Control
D Lamp Control
D Solenoid Control
D DC–DC Converter
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Drain–Source Voltage (VGS = 0V), V
Gate–Source Voltage (VDS = 0V), V
Drain Current, I
D
Continuous 70A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed 280A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Avalanche Drain Current (Pulsed, L = 100µH), I
Source Current, I
S
Continuous 70A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed 280A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Power Dissipation, P
Channel Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Channel–to–Case, R
DSS
GS
DA
D
ch
stg
th(ch–c)
100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
70A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
150W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.83°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (Tch = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Drain–Source Breakdown Voltage V
Gate–Source Leakage I
Zero Gate Voltage Drain Current I
Gate Threshold Voltage V
Static Drain–Source ON Resistance R
Drain–Source On–State Voltage V
Forward Transfer Admittance |yfs| VGS = 10V, ID = 35A – 53 – S
(BR)DSSVDS
GSS
DSS
GS(th)
DS(on)VGS
DS(on)VGS
= 0V, ID = 1mA 100 – – V
VGS = ±20V, VDS = 0V – – ±0.1 µA
VDS = 100V, VGS = 0 – – 0.1 mA
VDS = 10V, ID = 1mA 2.0 3.0 4.0 V
= 10V, ID = 35A – 14 20 mΩ
= 10V, ID = 35A – 0.49 0.70 V
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Electrical Characteristics (Cont’d): (Tch = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn–On Delay Time t
Rise Time t
Turn–Off Delay Time t
Fall Time t
Diode Forward Voltage V
Reverse Recovery Time t
d(on)
d(off)
.190 (4.82)
iss
oss
rss
r
f
SD
rr
VGS = 0V, VDS = 10V, f = 1MHz – 6540 – pF
– 1150 – pF
– 500 – pF
VDD = 50V
R
GEN
IS = 35A, VGS = 0V – 1.0 1.5 V
IS = 70A, dIF/dt = 100A/µs – 120 – ns
ID = 35A, VGS = 10V,
,
= RGS = 50Ω
– 95 – ns
– 175 – ns
– 330 – ns
– 190 – ns
.615 (15.62)
.787
(20.0)
.591
(15.02)
.787
(20.0)
.126 (3.22) Dia
GDS
.215 (5.47)
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