Datasheet NTE2561 Datasheet (NTE)

NTE2561

Silicon NPN Transistor

Video Amplifier

Features:

D High Gain–Bandwidth Product
D High Breakdown Voltage
D Large Current
D Small Reverse Transfer Capacitance

Applications:

D Wide–Band Amplifiers

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I

C

Continuous 500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak (Pulse) 1.0A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Collector Dissipation, P

TA = +25°C 1.75W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

TC = +25°C 15W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature, T
Storage Temperature Range, T

CBO

CEO

EBO

C

J

stg

100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

3V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h

Gain–Bandwidth Product f
Output Capacitance C
Reverse Transfer Capacitance C
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V

CE(sat)IC

BE(sat)IC
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE

CBO
EBO

FE

T
ob

VCB = 80V, IE = 0 – – 0.1 µA
VEB = 2V, IC = 0 – – 5.0 µA
VCE = 10V, IC = 50mA 30 – 200
VCE = 10V, IC = 100mA 20 – –
VCE = 10V, IC = 100mA – 1.2 – GHz
VCB = 30V, f = 1MHz – 4.4 – pF
VCB = 30V, f = 1MHz – 3.8 – pF

re

= 300mA, IB = 30mA – – 0.6 V
= 300mA, IB = 30mA – – 1.2 V
= 10µA, IE = 0 100 – – V
= 1mA, RBE = ∞ 80 – – V
= 100µA, IC = 0 3 – – V

.420 (10.67)

Max

.110 (2.79)

.147 (3.75)

Dia Max

.070 (1.78) Max

Base

.100 (2.54) Collector/Tab

.500

(12.7)

Max

.250 (6.35)

Max

.500

(12.7)

Min

Emitter