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NTE2530 (NPN) & NTE2531 (PNP)
Silicon Complementary Transistors
Features:
D High Current Capacity: IC = 2A
D High Breakdown Voltage: V
CEO
High Voltage Driver
= 400V Min
Absolute Maximum Ratings:
Collector Base Voltage, V
Collector Emitter Voltage, V
Emitter Base Voltage, V
Collector Current, I
EBO
C
(TA = +25°C unless otherwise specified)
CBO
CEO
Continuous 2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulse 4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
TA = +25°C 1W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
= +25°C 15W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain–Bandwidth Product
NTE2530
(TA = +25°C unless otherwise specified)
J
stg
CBO
EBO
FE
f
T
400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VCB = 300V, IE = 0 – – 1.0 µA
VEB = 4V, IC = 0 – – 1.0 µA
VCE = 10V, IC = 100mA 40 – 200
VCE = 10V, IC = 100mA – 60 – MHz
NTE2531 – 40 – MHz
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
CE(sat)IC
BE(sat)IC
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
= 500mA, IB = 50mA – – 1.0 V
= 500mA, IB = 50mA – – 1.0 V
= 10µA, IE = 0 400 – – V
= 1mA, RBE = ∞ 400 – – V
= 10µA, IC = 0 5 – – V
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Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Output Capacitance
NTE2530
NTE2531 – 25 – pF
Turn–On Time
NTE2530
NTE2531
Storage Time
NTE2530
NTE2531
Fall Time
NTE2530
NTE2531 – 0.3 – µs
C
ob
t
on
t
stg
t
VCB = 30V, f = 1MHz – 15 – pF
VCC = 150V, VBE = –5V,
10IB1 = –10IB2 = IC = 500mA,
R = 300Ω, R = 20Ω,
RL = 300Ω, RB = 20Ω,
at I
= 500mA,
C
Pulse Width = 20µs,
Duty Cycle ≤ 1%, Note 1
f
– 0.085 – µs
– 0.12 – µs
– 4.0 – µs
– 3.0 – µs
– 0.6 – µs
Note 1. For NTE2531, the polarity is reversed.
.256 (6.5) .090 (2.3)
.059 (1.5)
.197 (5.0)
BCE
.002 (0.5)
.275
(7.0)
.295
(7.5)
.002(0.5)
.090 (2.3)
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