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NTE2519 (NPN) & NTE2520 (PNP)
Silicon Complementary Transistors
Features:
D High Breakdown Voltage
D Large Current Capacity
D Isolated Package
Applications:
D Color TV Audio Output
D Converters
D Inverters
High Voltage Driver
Absolute Maximum Ratings:
Collector to Base Voltage, V
Collector to Emitter Voltage, V
Emitter to Base Voltage, V
Collector Current, I
C
(TA = +25°C unless otherwise specified)
CBO
CEO
EBO
Continuous 1.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 2.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, P
C
TA = +25°C 1.5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25°C 10W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
(TA = +25°C unless otherwise specified)
J
stg
CBO
EBO
FE
180V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
160V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VCB = 120V, IE = 0 – – 1.0 µA
VEB = 4V, IC = 0 – – 1.0 µA
VCE = 5V, IC = 100mA 140 – 400
VCE = 5V, IC = 10mA 90 – –
Gain Bandwidth Product f
T
VCE = 10V, IC = 50mA – 120 – MHz
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Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Output Capacitance
NTE2519
C
ob
NTE2520 – 22 – pF
Collector to Emitter Saturation Voltage
NTE2519
V
CE(sat)IC
NTE2520 – 0.2 0.5 V
VCB = 10V, f = 1MHz – 14 – pF
= 500mA, IB = 50mA – 0.13 0.45 V
Base to Emitter Saturation Voltage V
Collector to Base Breakdown Voltage V
Collector to Emitter Breakdown Voltage V
Emitter to Base Breakdown Voltage V
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
Rise Time t
Storage Time
NTE2519
BE(sat)IC
on
t
stg
= 500mA, IB = 50mA – 0.85 1.2 V
= 10µA, IE = 0 180 – – V
= 1mA, RBE = ∞ 160 – – V
= 10µA, IC = 0 6 – – V
IC = 10A, IB1 = 10A,
– 0.04 – µs
IB2 = 700mA, Note 1
– 1.2 – µs
NTE2520 – 0.7 – µs
Fall Time
NTE2519
t
f
– 0.08 – µs
NTE2520 – 0.04 – µs
Note 1. Pulse Width = 20µs, Duty Cycle ≤ 1%.
.315 (8.0)
.118 (3.0)
Dia
.130
(3.3)
.295
(7.5)
.433
(11.0)
ECB
.610
(15.5)
.094 (2.4)
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