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NTE2416 (NPN) & NTE2417 (PNP)
Silicon Complementary Transistors
w
Digital
/2 Built–In Bias 22k Resistors
(Surface Mount)
Features:
D Built–In Bias Resistors
D Small SOT–23 Surface Mount Package
Applications:
D Switching Circuits
D Inverters
D Interface Circuits
D Driver
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
EBO
C
(TA = +25°C unless otherwise specified)
CBO
CEO
Continuous 100mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 200mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, P
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Collector–Emitter Saturation Voltage V
Current Gain–Bandwidth Product
NTE2416
C
J
stg
(TA = +25°C unless otherwise specified)
CBO
I
CEO
EBO
FE
(BR)CBOIC
(BR)CBOIC
CE(sat)IC
f
T
VCB = 40V, IE = 0 – – 0.1 µA
VCE = 40V, IB = 0 – – 0.5 µA
VEB = 5V, IC = 0 70 113 150 µA
VCE = 5V, IC = 10mA 50 – –
VCE = 10V, IC = 5mA – 250 – MHz
50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
200mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 10µA, IE = 0 50 – – V
= 100µA, RBE = ∞ 50 – – V
= 10mA, IB = 0.5mA – 0.1 0.3 V
NTE2417 – 200 – MHz
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Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Output Capacitance
NTE2416
C
ob
VCB = 10V, f = 1MHz – 3.5 – pF
NTE2417 – 5.3 – pF
Input OFF Voltage V
Input ON Voltage V
I(off)
I(on)
Input Resistance R
Input Resistance Ratio R1/R
Output
NPN
Input
GND
VCE = 5V, IC = 100µA 0.8 1.1 1.5 V
VCE = 0.2V, IC = 10mA 1.0 1.9 3.0 V
1
2
Input
15 22 29 kΩ
0.9 1.0 1.1
PNP
Output
GND
.016 (0.48)
B
.074 (1.9)
.118 (3.0) Max
C
E
.037 (0.95)
.007 (0.2)
.098
(2.5)
Max
.051
(1.3)
.043 (1.1)
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