Datasheet NTE2380, NTE2381 Datasheet (NTE)

NTE2380 (N–Ch) & NTE2381 (P–Ch)

Complementary Silicon Gate MOSFETs

Enhancement Mode, High Speed Switch

Description:

The NTE2380 (N–Ch) and NTE2381 (P–Ch) are complementary TMOS power FETs i n a TO220 type
package designed for high voltage, high speed power switching applications such as switching regu­lators, converters, solenoid, and relay drivers.

Features:

D Silicon Gate for Fast Switching Speeds
D Rugged – SOA is Power Dissipation Limited
D Source–to–Drain Diode Characterized for Use With Inductive Loads

Absolute Maximim Ratings:

Drain–Source Voltage, V
Drain–Gate Voltage (R
Gate–Source Voltage, V
Drain Current, I

D

DSS

= 1MΩ), V

GS

GS

DGR

Continuous

NTE2380 2.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE2381 2.0A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Pulsed

NTE2380 10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE2381 8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Power Dissipation (T

= +25°C), P

C

D

NTE2380 40W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Derate Above 25°C 0.32W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE2381 75W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Derate Above 25°C 0.6W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Temperature Range, T

opr

NTE2380 –55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE2381 –65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage Temperature Range, T

stg

NTE2380 –55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE2381 –65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Thermal Resistance, Junction–to–Ambient, R
Thermal Resistance, Junction–to–Case, R

thJA

thJC

NTE2380 3.12°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE2381 1.67°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), T

NTE2380 +300°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE2381 +275°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

L

500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

62.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Drain–Source Breakdown Voltage V
Zero Gate Voltage Drain Current

(BR)DSSVGS

I

DSS

NTE2380
NTE2381 – – 0.2 mA
NTE2380 & NTE2381 VDS = 400V, VGS = 0, TJ = +125°C – – 1.0 mA

Gate–Body Leakage Current, Forward

I

GSSF

NTE2380
NTE2381 – – 100 nA

Gate–Body Leakage Current, Reverse

I

GSSR

NTE2380
NTE2381 – – 100 nA

ON Characteristics (Note 1)
Gate Threshold Voltage

V

GS(th)

NTE2380
NTE2381 ID = 1mA 2.0 – 4.5 V

Static Drain–Source On–Resistance

r

DS(on)

NTE2380
NTE2381 – – 6 Ω

Forward Transconductance

g

FS

NTE2380
NTE2381 VDS = 15V 0.5 – – mhos

Dynamic Characteristics

Input Capacitance

C

iss

NTE2380
NTE2381 – – 100 pF

Output Capacitance

C

oss

NTE2380
NTE2381 – – 200 pF

Reverse Transfer Capacitance

C

rss

NTE2380
NTE2381 – – 80 pF

Switching Characteristics (Note 1)
Turn–On Time

NTE2380

t

d(on)

NTE2381

Rise Time

NTE2380

t

r

NTE2381 VDS = 125V – – 100 ns

Turn–Off Time

NTE2380

t

d(off)

NTE2381 VDS = 125V – – 150 ns

Fall Time

NTE2380

t

f

NTE2381 VDS = 125V – – 50 ns

= 0, ID = 0.25mA 500 – – V

VDS = 500V, VGS = 0

V

= 20V, VDS = 0

GSF

V

= 20V, VDS = 0

GSF

VDS = V

GS

ID = 0.25mA

VGS = 10V, ID = 1A

ID = 1A VDS ≥ 7.5V

VDS = 25V, VGS = 0, f = 1MHz

– – 0.25 mA

– – 500 nA

– – 500 nA

2.0 – 4.0 V

– – 3 Ω

1 – – mhos

– – 400 pF

– – 150 pF

– – 40 pF

ID = 1A,
R

= 50Ω

gen

VDD [ 200V

– – 60 ns

VDS = 125V – – 50 ns

VDD [ 200V

VDD [ 200V

VDD [ 200V

– – 50 ns

– – 60 ns

– – 30 ns

Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Switching Characteristics (Cont’d) (Note 1)

Total Gate Charge

NTE2380

Q

NTE2381

Gate–Source Charge

NTE2380

Q

NTE2381 – 10 – ns

Gate–Drain Charge

NTE2380

Q

NTE2381 – 10 – ns

Source Drain Diode Characteristics (Note 1)
Forward On–Voltage

V

NTE2380
NTE2381 – 1.8 2.5 V

Forward Turn–On Time t
Reverse Recovery Time

on

t

NTE2380
NTE2381 – 120 – ns

Internal Package Inductance

Internal Drain Inductance L

Internal Source Inductance L

VGS = 10V, VDS = 400V,

g

ID = Rated I

gs

gd

SD

D

IS = Rated ID, VGS = 0

rr

Measured from contact screw on

d

tab to center of die
Measured from the drain lead

0.25” from package to center of die
Measured from the source lead

s

0.25” from package to center of pad

– 12 15 ns
– 20 25 ns

– 6 – ns

– 6 – ns

– – 1.6 V

Limited by stray inductance

– 500 – ns

– 3.5 – nH

– 4.5 – nH

– 7.5 – nH

Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

.420 (10.67)

Max

.147 (3.75) Dia Max

.250 (6.35)

Max

.070 (1.78) Max

Gate

.100 (2.54)

Source
Drain/Tab

.110 (2.79)

.500

(12.7)

Max

.500

(12.7)

Min