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NTE2379
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Features:
D Dynamic dv/dt Rating
D Repetitive Avalanche Rated
D Fast Switching
D Ease of Paralleling
D Simple Drive Requirements
Absolute Maximum Ratings:
Gate–Source Voltage, V
Drain Current, I
D
Continuous (VGS = 10V)
T
= +25°C 6.2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
TC = +100°C 3.9A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed (Note 1) 25A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current (Pulsed), I
Single Pulsed Avalanche Energy (Note 2), E
Avalanche Current (Note 1), I
Repetitive Avalanche Energy (Note 1), E
Peak Diode Recovery dv/dt (Note 3), dv/dt 3V/ns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
Derate Above 25°C 1.0W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
Maximum Lead Temperature (During Soldering, 1/16” from case, 10sec), T
Thermal Resistance:
Maximum Junction–to–Case, R
Typical Case–to–Sink (Mounting surface flat, smooth, and greased), R
Maximum Junction–to–Ambient (Free Air Operation), R
GS
GM
AR
= +25°C), P
C
stg
D
thJC
AR
AS
J
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
L
1.0°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thCS
thJA
0.5°C/W. . . . . .
±20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±1.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
570mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6.2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
125W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+300°C. . . . . . . . . . . .
62°C/W. . . . . . . . . . . . . . . . . . . .
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2. V
Note 3. I
= 50V, starting TJ = +25°C, l = 27mH, RG = 25Ω, IAS = 6.2A.
DD
≤ 6.2A, di/dt ≤ 80A/µA, VDD ≤ V
SD
(BR)DSS
, TJ ≤ +150°C.
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Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Drain–Source Breakdown Voltage BV
Gate Threshold Voltage V
Gate–Source Leakage Forward I
Gate–Source Leakage Reverse I
Drain–Source Leakage Current I
DSSVGS
GS(th)VDS
GSS
GSS
DSS
VGS = 20V – – 100 nA
VGS = –20V – – –100 nA
VDS = 600V, VGS = 0 – – 100 µA
VDS = 480V, VGS = 0, TC = +150°C – – 500 µA
Static Drain–Source ON Resist-
R
DS(on)VGS
ance
Forward Transconductance g
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn–On Delay Time t
d(on)
Rise Time t
Turn–Off Delay Time t
d(off)
Fall Time t
Total Gate Charge Q
Gate–Source Charge Q
Gate–Drain (“Miller”) Charge Q
Internal Drain Inductance L
Internal Source Inductance L
VDS ≥ 100V, ID = 3.7A, Note 4 4.7 – – mhos
fs
VGS = 0V, VDS = 25V, f = 1MHz – 1300 – pF
iss
oss
rss
VDD = 300V
RD = 47Ω, Note 4
r
f
VGS = 10V, ID = 6.2A, VDS = 360V
g
gs
gd
Between lead, 6mm (.250 in) from package
D
and center of die contact
S
Source–Drain Diode Ratings and Characteristics
= 0V, ID = 250µA 600 – – V
= VGS, ID = 250µA 2.0 – 4.0 V
= 10V, ID = 3.7A, Note 4 – – 1.2 Ω
– 160 – pF
– 30 – pF
ID = 6.2A, RG = 9.1Ω,
,
– 32 – ns
– 18 – ns
– 55 – ns
– 20 – ns
– – 60 nC
– – 8.3 nC
– – 30 nC
– 4.5 – nH
– 7.5 – nH
Continuous Source Current I
Pulse Source Current I
Diode Forward Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q
Forward Turn–On Time t
SM
(Body Diode) – – 6.2 A
S
(Body Diode) Note 1 – – 25 A
TJ = +25°C, IS = 6.2A, VGS = 0V, Note 4 – – 1.5 V
SD
TJ = +25°C, IF = 6.2A, di/dt = 100A/µs,
rr
Note 4
rr
on
Intrinsic turn–on time is neglegible (turn–on is dominated by LS + LD)
– 450 940 ns
– 3.8 7.9 µC
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
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.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.070 (1.78) Max
Gate
.100 (2.54)
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
Source
Drain/Tab
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