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NTE2365
Silicon NPN Transistor
High Voltage Horizontal Deflection Output
TO3PBL Type Package
Features:
D High Speed: tf = 100ns typ
D High Reliability
D High Breakdown Voltage: V
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector to Base Voltage, V
CBO
Collector to Emitter Voltage, V
Emitter to Base Voltage, V
EBO
Collector Current, IC
Continuous 15A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 35A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, P
Junction Temperature, T
C
J
Storage Temperature Range, T
CBO
CEO
stg
= 1500V
1500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
800V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
180W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Collector Sustaining Voltage V
Emitter Cutoff Current I
Collector−Emitter Saturation Voltage V
Base−Emitter Saturation Voltage V
DC Current Gain h
Storage Time t
Fall Time t
CBO
I
CES
CEO(sus)IC
EBO
CE(sat)IC
BE(sat)IC
FE(1)
h
FE(2)
stg
VCB = 800V, IE = 0 − − 10 μA
VCE = 1500V, RBE = 0 − − 1.0 mA
= 100mA, IB = 0 800 − − V
VEB = 4V, IC = 0 − − 1.0 mA
= 10A, IB = 2.5A − − 5 V
= 10A, IB = 2.5A − − 1.5 V
VCE = 5V, IC = 1A 8 − 30
VCE = 5V, IC = 10A 4 − 8
IC = 8A, IB1 = 1.6A, IB2 = −3.2A
f
− − 3.0 μs
− − 0.2 μs
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.137 (3.5)
Dia Max
.236
(6.0)
Max
.098
(2.5)
.204 (5.2).810 (20.57)
1.030
(26.16)
.787
(20.0)
BC E
Note: Pin2 connected to metal part of
.040 (1.0).215 (5.45) .023
(0.6)
mounting surface.
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