Datasheet NTE234 Specification

NTE234

Silicon PNP Transistor

Low Noise, High Gain Amplifier

TO−92 Type Package

(Compl to NTE2696)

Description:

The NTE234 is a silicon PNP transistor in a TO92 type package designed especially for low noise
preamplifier and small signal industrial amplifier applications. This device features low collector satu­ration voltage, tight beta control, and excellent low noise characteristics.

Features:

D Low Noise
D High DC Current Gain
D High Breakdown Voltage
D Low Pulse Noise

Absolute Maximum Ratings:

Collector−Emitter Voltage, V
Collector−Base Voltage, V
Emitter−Base Voltage, V

EBO

Steady State Collector Current, I
Emitter Current, I

E

Collector Power Dissipation, P

(TA = +25C unless otherwise specified)

CEO

CBO

C

C

Operating Junction Temperature Range, T
Storage Temperature Range, T

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Cutoff Current I

Emitter Cutoff Current I

Breakdown Voltage

Collector−to−Emitter

DC Current Gain h

stg

(TA = +25C unless otherwise specified)

CBO

EBO

V

(BR)CEOIC

FE

100mA.................................................

100mA...............................................................

300mW..................................................

J

−55 to +125C..................................

−55 to +125C..........................................

VCB = 120V, IE = 0 − − 100 nA

VEB = 5V, IC = 0 − − 100 nA

= 1mA, IB = 0 120 − − V

VCE = 6V, IC = 2mA 350 − 700

Rev. 8−15

120V.....................................................

120V......................................................

5V..........................................................

Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Saturation Voltage

Collector−to−Emitter

Base−to−Emitter Voltage V

Transition Frequency f

Collector Output Capacitance C

Noise Figure NF VCE = 6V, IC = 100A,

V

CE(sat)IC

BE

T

ob

= 10mA, IB = 1mA − − 0.3 V

VCE = 6V, IC = 2mA − 0.65 − V

VCE = 6V, IC = 1mA − 100 − MHz

VCB = 10V, IE = 0, f = 1MHz − 4 − pF

f = 10Hz, R

VCE = 6V, IC = 100A,
f = 1Hz, R

VCE = 6V, IC = 100A,
f = 1Hz, R

= 10k

g

= 10k

g

= 100k

g

.135 (3.45) Min

.210

(5.33)

Max

− − 6 dB

− − 2

− 3 −

Seating Plane

.500

(12.7)

Min

.100 (2.54)

.105 (2.67) Max

.205 (5.2) Max

.021 (.445) Dia Max

E C B

.050 (1.27)

.165

(4.2)

Max

.105 (2.67) Max