Page 1
NTE225
Silicon NPN Transistor
Linear Amplifier and High Speed Switch
Description:
The NTE225 is a silicon NPN transistor in a TO39 type package (with flange) designed for industrial
and commercial equipment. Typical applications include high voltage differential and operational amplifiers, high voltage inverters, and high voltage, low current switching and series regulators.
Features:
D High Voltage Rating: V
CEO(sus)
D Low Saturation Voltage
Absolute Maximum Ratings:
Collector−Base Voltage, V
CBO
Collector−Emitter Sustaining Voltage, V
Emitter−Base Voltage, V
Collector Current, I
Base Current, I
B
EBO
C
Total Power Dissipation (TC = +25°C), P
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction−to−Case, R
Lead Temperature (During Soldering, 1/32” from seating plane for 10sec Max, T
= 350V Max.
stg
CEO(sus)
D
J
thJC
450V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
350V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
17.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
L
+255°C. . . . . . .
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector−Emitter Sustaining Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Collector−Emitter Saturation Voltage V
Base−Emitter Saturation Voltage V
Small−Signal Current Gain h
Output Capacitance C
Second Breakdown Collector Current I
Note 1. The sustaining voltage (V
CEO(sus)IC
CEO
I
CEV
EBO
FE
CE(sat)IC
BE(sat)IC
fe
ob
S/b
CEO(sus)
= 50mA, IB = 0, Base Open, Note 1 350 − − V
VCE = 300V, IB = 0 − − 20 µA
VCE = 450V, VBE = −1.5V − − 500 µA
VBE = 6V, IC = 0 − − 20 µA
VCE = 10V, IC = 20mA 40 − 160
VCE = 10V, IC = 2mA 30 − −
= 50mA, IB = 4mA − − 0.5 V
= 50mA, IB = 4mA − − 1.3 V
VCE = 10V, IC = 10mA, f = 5MHz 3 − −
VCB = 10V, IE = 0, f = 1MHz − − 10 pF
VCE = 200V, with Base Forward Biased 50 − − mA
) MUST NOT be measured on a curve tracer.
Page 2
.065 (1.68)
.370 (9.39) Dia Max
.315
(8.0)
.143 (3.65) Min
Emitter
.190 (4.82)
Base
.019 (0.48) Dia
Collector/Case
.500
(12.7)
.630 (16.0)
1.000 (25.4)
Loading...