Datasheet NTE131, NTE155 Specification

NTE131 (PNP) & NTE155 (NPN)

Germanium Complementary Transistors

Audio Power Amplifier

Description:

The NTE131 (PNP) and NTE155 (NPN) are Germanium PNP Alloy Junction transistors in a Japanese
TO66 type package designed for use in audio power amplifier applications.

Absolute Maximum Ratings:

Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I

B

Power Dissipation, P

EBO

C

C

Operating Junction Temperature, T
Storage Temperature Range, T

(TA = +25°C unless otherwise specified)

CBO

CES

J

stg

Note 1. NTE131MP is a matched pair of NTE131 with their DC Current Gain (h

10% of each other.

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Cutoff Current I
Emitter Cutoff Current I

(TA = +25°C unless otherwise specified)

CEV
EBO

VCE = 32V, VEB = 1V – – 1 mA
VEB = 10V, IC = 0 – – 1 mA

200mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+90°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +90°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

) matched to within

FE

32V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

32V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

6W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

DC Current Gain h

h
Common–Emitter Cutoff Frequency f
Base–Emitter ON Voltage V
Collector–Emitter Saturation Voltage V

CE(sat)IC

FE1
FE2

α

e

BE

VCB = 0, IE = 100mA 35 – 170
VCB = 0, IE = 1A 36 – 185
VCB = 2V, IE = 100mA 10 15 – kHz
VCB = 0, IE = 1A – 0.4 – V

= 1A, IB = 100mA – 0.08 – V

.031

(.792)

.593 (15.08)

Dia

.290 (7.36)

.157 (4.0)

Dia

(2 Places)

.039 (1.0) Dia

.530 (13.5)

.944 (24.0)

.295 (7.5)

Base

.315

(8.0)

Collector/Case

Emitter