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NTE128 (NPN) & NTE129 (PNP)
Silicon Complementary Transistors
Audio Output, Video, Driver
Description:
The NTE128 (NPN) and NTE129 (PNP) are silicon complementary transistors in a TO39 type package designed primarily for amplifier and switching applications. These devices features high breakdown voltages, low leakage currents, low capacity, and a beta useful over an extremely wide current
range.
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
CEO
CBO
NTE128 140V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE129 80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
NTE128 7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE129 5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
Total Device Dissipation (T
C
= +25°C), P
A
D
NTE128 0.8W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25°C 4.6mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE129 1.25W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25°C 7.15mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
= +25°C), P
C
D
NTE128 5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25°C 28.6mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE129 7W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25°C 40mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Case, R
J
thJC
NTE128 16.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE129 20°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Ambient, R
thJA
NTE128 89.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE129 140°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/16” from case, 60sec max), T
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
L
80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+300°C. . . . . . . . . . . . . . . . .
Note 1. NTE129MCP is a matched complementary pair containing 1 each of NTE128 (NPN) and
NTE129 (PNP).
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Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
NTE128
V
(BR)CEO
IC = 30mA, IB = 0 80 – – V
NTE129 IC = 10mA 80 – – V
Collector–Base Breakdown Voltage
NTE128
V
(BR)CBO
IC = 100µA, IE = 0 140 – – V
NTE129 IC = 10µA 80 – – V
Emitter–Base Breakdown Voltage
NTE128
V
(BR)EBO
IE = 100µA, IC = 0 7 – – V
NTE129 IE = 10µA 5 – – V
Collector Cutoff Current
NTE128
I
CBO
VCB = 90V, IE = 0 – – 0.01 µA
VCB = 90V, IE = 0, TA = +150°C – – 10 µA
NTE129 VCB = 60V – – 50 nA
VCB = 60V, TA = +150°C – – 50 µA
Emitter Cutoff Current
NTE128
I
EBO
VBE = 5V, IC = 0 – – 0.010 µA
NTE129 VBE = 5V – – 10 µA
ON Characteristics (Note 2)
DC Current Gain
NTE128
h
FE
IC = 0.1mA, VCE = 10V 50 – –
IC = 10mA, VCE = 10V 90 – –
IC = 150mA, VCE = 10V 100 – 300
IC = 150mA, VCE = 10V, TC = –55°C 40 – –
IC = 500mA, VCE = 10V 50 – –
IC = 1.0A, VCE = 10V 15 – –
NTE129 IC = 100µA, VCE = 5V 75 – –
IC = 100mA, VCE = 5V 100 – 300
IC = 100mA, VCE = 5V, TC = –55°C 40 – –
IC = 500mA, VCE = 5V 70 – –
IC = 1.0A, VCE = 5V 25 – –
Collector–Emitter Saturation Voltage
NTE128
V
CE(sat)
IC = 150mA, IB = 15mA – – 0.2 V
IC = 500mA, IB = 50mA – – 0.5 V
NTE129 IC = 150mA, IB = 15mA – – 0.15 V
IC = 500mA, IB = 50mA – – 0.5 V
Base–Emitter Saturation Voltage
NTE128
V
BE(sat)
IC = 150mA, IB = 15mA – – 1.1 V
NTE129 – – 0.9 V
Base–Emitter ON Voltage (NTE129 Only) V
BE(on)IC
= 500mA, VCE = 500mV – – 1.1 V
Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 1%.
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Electrical Characteristics (Cont’d): TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Small–Signal Characteristics
Current–Gain – Bandwidth Product
(NTE128 Only)
Output Capacitance
NTE128
f
T
IC = 50mA, VCE = 10V, f = 20MHz 100 – 400 MHz
C
obo
VCB = 10V, IE = 0, f = 1MHz – – 12 pF
NTE129 VCE = 10V, f = 1MHz – – 20 pF
Input Capacitance
NTE128
C
ibo
VBE = 500mV, IC = 0, f = 1MHz – – 60 pF
NTE129 VEB = 500mV, f = 1MHz – – 110 pF
Small–Signal Current Gain
NTE128
h
fe
IC = 1mA, VCE = 5V, f = 1kHz 80 – 400
NTE129 IC = 50mA, VCE = 10V, f = 100MHz 1 – 4
Collector–Base Time Constant
(NTE128 Only)
Noise Figure (NTE128 Only) NF IC = 100µA, VCE = 10V, RS = 1kΩ,
rb′C
c
IE = 10mA, VCB = 10V, f = 79.8MHz – – 400 ps
– – 4 dB
f = 1kHz
Switching Characteristics (NTE129 Only)
Storage Time t
Turn–On Time t
Fall Time t
on
IC = 500mA, IB1 = IB2 = 50mA – – 350 ns
s
IC = 500mA, IB1 = 50mA – – 100 ns
IC = 500mA, IB1 = IB2 = 50mA – – 50 ns
f
Emitter
.370 (9.39) Dia Max
.355 (9.03) Dia Max
.260
(6.6)
Max
.500
(12.7)
Min
.018 (0.45)
Base
Collector/Case
45°
.031 (.793)
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