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NTE123A (NPN) & NTE159M (PNP)
Silicon Complementary Transistors
General Purpose
Description:
The NTE123A (NPN) a nd N TE159M ( PNP) a re w idely used “Industry Standard” c omplementary t ransistors in a TO18 type c ase d esigned f or a pplications s uch a s m edium–speed s witching a nd a mplifiers f rom
audio to VHF frequencies.
Features:
D Low Collector Saturation Voltage: 1V (Max)
D High Current Gain–Bandwidth Product: f
= 300MHz (Min) @ IC 20mA
T
Absolute Maximum Ratings
Collector–Emitter Voltage, V
:
CEO
NTE123A 40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE159M 60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Base Voltage, V
CBO
NTE123A 75V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE159M 60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
NTE123A 6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE159M 5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
NTE123A 800mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE159M 600mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
= +25°C), PD 0.4W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
Derate Above +25°C 2.28mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
= +25°C), P
C
NTE123A 1.2W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above +25°C 6.85mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE159M 1.8W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above +25°C 10.3mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
Storage Temperature Range, T
stg
D
J
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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Electrical Characteristics: (TA = 25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
NTE123A
V
(BR)CEO
IC = 10mA, IB = 0
40 – – V
NTE159M 60 – – V
Collector–Base Breakdown Voltage
NTE123A
V
(BR)CBO
IC = 10µA, IE = 0
75 – – V
NTE159M 60 – – V
Emitter–Base Breakdown Voltage
NTE123A
V
(BR)EBO
IE = 10µA, IC = 0
6 – – V
NTE159M 5 – – V
Collector Cutoff Current
NTE123A
I
CEX
VCE = 60V, V
EB(off)
= 3V
–
–
10 nA
NTE159M VCE = 30V, VBE = 500mV – – 50 nA
Collector Cutoff Current
NTE123A
I
CBO
VCB = 60V, IE = 0
– – 0.01 µA
VCB = 60V, IE = 0, TA = +150°C – – 10 µA
NTE159M VCB = 50V, IE = 0 – – 0.01 µA
VCB = 50V, IE = 0, TA = +150°C – – 10 µA
Emitter Cutoff Current (NTE123A Only) I
Base Cutoff Current
EBO
I
BL
NTE123A
NTE159M VCE = 30V, V
VEB = 3V, IC = 0 – – 10 nA
VCE = 60V, V
= 3V
EB(off)
= 500mV – – 50 nA
EB(off)
– – 20 nA
ON Characteristics
DC Current Gain
NTE123A
h
FE
VCE = 10V IC = 0.1mA, Note 1
35 – –
IC = 1mA 50 – –
IC = 10mA, Note 1 75 – –
IC = 10mA, TA = –55°C 35 – –
IC = 150mA, Note 1 100 – 300
VCE = 1V, IC = 150mA, Note 1 50 – –
VCE = 10V IC = 500mA, Not e 1 40 – –
NTE159M IC = 0.1mA 75 – –
IC = 1mA 100 – –
IC = 10mA 100 – –
IC = 150mA, Note 1 100 – 300
IC = 500mA, Note 1 50 – –
Collector–Emitter Saturation Voltage
NTE123A
V
CE(sat)
IC = 150mA, IB = 15mA, Note 1
– – 0.3 V
IC = 500mA, IB = 50mA, Note 1 – – 1.0 V
NTE159M IC = 150mA, IB = 15mA, Note 1 – – 0.4 V
IC = 500mA, IB = 50mA, Note 1 – – 1.6 V
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
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Electrical Characteristics (Cont’d): (TA = 25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Cont’d)
Base–Emitter Saturation Voltage
NTE123A
NTE159M IC = 150mA, IB = 15mA, Note 1 – – 1.3 V
Small–Signal Characteristics
Current Gain–Bandwidth Product
NTE123A
NTE159M IC = 50mA
Output Capacitance C
Input Capactiance
NTE123A
NTE159M VBE = 2V – – 30 pF
Input Impedance (NTE123A Only) h
Voltage Feedback Ratio
(NTE123A Only)
Small–Signal Current Gain
(NTE123A Only)
Output Admittance (NTE123A Only) h
Collector–Base Time Constant
(NTE123A Only)
Noise Figure (NTE123A Only) NF IC = 100µA, VCE = 10V, RS = 1kΩ,
Real Part of Common–Emitter High
Frequency Input Impedance
(NTE123A Only)
V
BE(sat)
IC = 150mA, IB = 15mA, Note 1
0.6 – 1.2 V
IC = 500mA, IB = 50mA, Note 1 – – 2.0 V
IC = 500mA, IB = 50mA – – 2.6 V
f
T
IC = 20mA
obo
C
VCB = 10V, IE = 0, f = 100kHz – – 8 pF
ibo
VBE = 0.5V
IC = 1mA VCE = 10V, f = 1kHz 2.0 – 8.0
ie
VCE = 20V, f = 100MHz,
Note 2
IC = 0, f = 100kHz
300 – – MHz
200 – – MHz
– – 25 pF
IC = 10mA 0.25 – 1.25 kΩ
h
IC = 1mA VCE = 10V, f = 1kHz – – 8 x 10
re
IC = 10mA – – 4 x 10
h
IC = 1mA VCE = 10V, f = 1kHz 50 – 300
fe
IC = 10mA 75 – 375
IC = 1mA VCE = 10V, f = 1kHz 5 – 35 µmhos
oe
IC = 10mA 25 – 200 µmhos
rb′C
c
IE = 20mA, VCB = 20V, f = 31.8MHz
– – 150 ps
– – 4 dB
f = 1kHz
Re(hie) IC = 20mA, VCE = 20V, f = 300MHz – – 60 Ω
kΩ
–4
–4
Switching Characteristics
NTE123A
Delay Time
Rise Time t
Storage Time t
Fall Time t
t
VCC = 30V, V
d
IC = 150mA, IB1 =– 15mA
r
VCC = 30V, IC = 150mA,
s
IB1 = IB2 = 15mA
f
BE(off)
= 500mV,
NTE159M
Turn–On Time
Delay Time t
Rise Time t
Turn–Off Time t
Storage Time t
Fall Time t
t
on
off
VCC = 30V, IC = 150mA,
IB1 = 15mA
d
r
VCC = 6V, IC = 150mA,
IB1 = IB2 = 15mA
s
f
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Note 2. f
is defined as the frequency at which |hfe| extrapolates to unity.
T
– – 10 ns
– – 25 ns
– – 225 ns
– – 60 ns
– 26 45 ns
– 6 10 ns
– 20 40 ns
– 70 100 ns
– 50 80 ns
– 20 30 ns
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.210 (5.33)
Max
.500
(12.7)
Min
.230 (5.84) Dia Max
.195 (4.95) Dia Max
.030 (.762) Max
.018 (0.45)
Emitter
Base
Collector
45°
.041 (1.05)
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