Datasheet ntd80n02-d Datasheet

Page 1

NTD80N02

Power MOSFET

24 V, 80 A, N−Channel DPAK

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.

Features

• These Devices are Pb−Free and are RoHS Compliant

Typical Applications

• Power Supplies

• Converters

• Power Motor Controls

• Bridge Circuits

(BR)DSS

24 V

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TYP

DS(on)

5.0 m

N−Channel

ID MAXV

80 A

MAXIMUM RATINGS (T

Rating Symbol Value Unit

Drain−to−Source Voltage V

Gate−to−Source Voltage − Continuous V

Drain Current − Continuous @ T

Drain Current − Single Pulse (tp = 10 s)

Total Power Dissipation @ TC = 25°C P

Operating and Storage

Temperature Range

Single Pulse Drain−to−Source Avalanche

Energy − Starting TJ = 25°C (VDD = 24 Vdc, VGS = 10 Vdc, IL = 17 Apk, L = 5.0 mH, RG = 25 Ω)

Thermal Resistance

− Junction−to−Case

− Junction−to−Ambient (Note 1)

− Junction−to−Ambient (Note 2)

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. When surface mounted to an FR4 board using 1″ pad size,

(Cu Area 1.127 in2).

2. When surface mounted to an FR4 board using the minimum recommended

pad size, (Cu Area 0.412 in2).

*Chip current capability limited by package.

= 25°C unless otherwise noted)

DSS

= 25°C

TJ, T

stg

24 Vdc

±20 Vdc

80* 200

75 Watts

−55 to 150

733 mJ

1.65 67

120

260 °C

Adc

°C

°C/W

CASE 369AA

DPAK

(Surface Mount)

STYLE 2

MARKING DIAGRAMS

& PIN ASSIGNMENTS

Drain

YWW80N02G

Drain

Gate

CASE 369C

DPAK

(Surface Mount)

STYLE 2

3 Source

Gate

CASE 369D

DPAK

(Straight Lead)

STYLE 2

Drain

YWW80N02G

Drain

3 Source

October, 2010 − Rev. 5

80N02 = Device Code Y = Year WW = Work Week G = Pb−Free Package

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet.

1 Publication Order Number:

NTD80N02/D

Page 2

NTD80N02

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage (Note 3)

(VGS = 0 Vdc, ID = 250 Adc)

Positive Temperature Coefficient

Zero Gate Voltage Drain Current

(VGS = 0 Vdc, VDS = 24 Vdc) (VGS = 0 Vdc, VDS = 24 Vdc, TJ = 125°C)

Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) I

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage (Note 3)

(VDS = VGS, ID = 250 Adc)

Negative Threshold Temperature Coefficient

Static Drain−to−Source On−Resistance (Note 3)

(VGS = 10 Vdc, ID = 80 Adc) (VGS = 4.5 Vdc, ID = 40 Adc) (VGS = 10 Vdc, ID = 20 Adc) (VGS = 4.5 Vdc, ID = 20 Adc)

Forward Transconductance (VDS = 15 Vdc, ID = 10 Adc) (Note 3) g

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance C

Transfer Capacitance C

(VDS = 20 Vdc,

VGS = 0 V,

f = 1.0 MHz)

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

Rise Time t

Turn−Off Delay Time t

Fall Time t

Gate Charge

(VGS = 4.5 Vdc,

VDD = 20 Vdc,

ID = 20 Adc,

= 2.5 Ω)

(VGS = 4.5 Vdc,

ID = 20 Adc,

VDS = 20 Vdc) (Note 3)

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage

(IS = 20 Adc, VGS = 0 Vdc) (Note 3) (IS = 40 Adc, VGS = 0 Vdc) (IS = 20 Adc, VGS = 0 Vdc, TJ = 150°C)

Reverse Recovery Time

(IS = 20 Adc, VGS = 0 Vdc, dIS/dt = 100 A/s) (Note 3)

Reverse Recovery Stored Charge Q

3. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperatures.

(BR)DSS

DSS

GSS

GS(th)

DS(on)

−

27 25

−

− − ±100 nAdc

1.0

−

1.9

−3.8

5.0

7.5

5.0

7.5

− 20 − Mhos

− 2250 2600 pF

− 900 1100

− 400 525

− 17 30 ns

− 67 125

− 28 45

− 40 75

− 30 42 nC

d(on)

d(off)

iss

oss

rss

Q1 − 7.0 12

Q2 − 18 28

−

0.92

1.05

0.70

− 38 52

− 20 −

− 18 −

− 0.038 −

1.0 10

3.0

5.8

9.0

5.8

9.0

1.2

−

Vdc

−

mV/°C

Adc

Vdc

−

mV/°C

mΩ

Vdc

−

C

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Page 3

NTD80N02

TYPICAL CHARACTERISTICS

100

9 V

8 V

, DRAIN CURRENT (AMPS)

0.5 43.5

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

4.6 V

4.8 V 5 V

6.5 V

Figure 1. On−Region Characteristics

0.07

0.06

0.05

0.04

4.4 V

5.2 V 6 V

TJ = 25°C

21.51

2.5 3

4.2 V

4 V

3.8 V

3.6 V

3.4 V

3.2 V

VGS = 3.0 V

ID = 10 A TJ = 25°C

160 150 140 130 120 110 100

, DRAIN CURRENT (AMPS)

VDS ≥ 24 V

90 80 70

TJ = 25°C

60 50 40

TJ = 125°C

30 20 10

23 6

TJ = −55°C

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 2. Transfer Characteristics

0.015

TJ = 25°C

0.01 VGS = 4.5 V

0.03

0.02

0.01

, DRAIN−TO−SOURCE RESISTANCE (Ω)

DS(on)

26810

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 3. On−Resistance versus

Gate−To−Source Voltage

0.015

0.0125

0.01

0.0075

0.005

0.0025

, DRAIN−TO−SOURCE RESISTANCE

DS(on)

−50 100750−25 125 150

TJ, JUNCTION TEMPERATURE (°C)

5025

ID = 80 A V

= 4.5 V

ID = 80 A V

= 10 V

VGS = 10 V

0.005

, DRAIN−TO−SOURCE RESISTANCE (Ω)

DS(on)

60 65 70 75 80

ID, DRAIN CURRENT (A)

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

1000

VGS = 0 V

100

, LEAKAGE (nA)

DSS

0.1

0.01 41612820

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

TJ = 125°C

TJ = 100°C

TJ = 25°C

Figure 5. On−Resistance Variation with

Temperature

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Figure 6. Drain−To−Source Leakage

Current versus Voltage

Page 4

NTD80N02

TYPICAL CHARACTERISTICS

5000

4000

VGS = 0 V

TJ = 25°C

3000

iss

2000

oss

C, CAPACITANCE (pF)

1000

rss

−8 −6 −4 −2

0 2 4 6 8 1012141618202224

VGSV

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)

Figure 7. Capacitance Variation Figure 8. Gate−to−Source and

1000

VDD = 20 V ID = 20 A VGS = 10 V

d(off)

d(on)

10 100

RG, GATE RESISTANCE (Ω)

100

t, TIME (ns)

, GATE−TO−SOURCE VOLTAGE (V)

010

20 30 40 50

ID = 1.0 A TJ = 25°C

Qg, TOTAL GATE CHARGE (nC)

Drain−to−Source Voltage versus Total Charge

VGS = 0 V

TJ = 25°C

, SOURCE CURRENT (AMPS)

0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

, DRAIN−TO−SOURCE VOLTAGE (V)

−V

Figure 9. Resistive Switching Time Variation

versus Gate Resistance

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Figure 10. Diode Forward Voltage versus

Current

Page 5

100

, DRAIN CURRENT (AMPS)

0.1

TYPICAL CHARACTERISTICS

VGS = 10 V SINGLE PULSE TC = 25°C

LIMIT

DS(on)

THERMAL LIMIT PACKAGE LIMIT

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

NTD80N02

100 s

1 ms

10 ms

100

di/dt

TIME

0.25 I

Figure 11. Maximum Rated Forward Biased

Figure 12. Diode Reverse Recovery Waveform

Safe Operating Area

1000

DUTY CYCLE

100

0.2

0.1

0.05

0.02

0.01

THERMAL RESISTANCE

Rthja(t), EFFECTIVE TRANSIENT

0.1

SINGLE PULSE

0.01 1E-05 1E-03 1E-02 1E-01

D = 0.5

1E-04 1E+02

t, TIME (seconds)

MOUNTED TO MINIMUM RECOMMENDED FOOTPRINT

(pk)

DUTY CYCLE, D = t1/t

D CURVES APPLY FOR POWER PULSE TRAIN SHOWN

READ TIME AT t T

J(pk)

- TA = P

(pk)

(t) = r(t) R

1E+00 1E+01 1E+03

(t)

Figure 13. Thermal Response − Various Duty Cycles

ORDERING INFORMATION

Order Number Package Shipping

NTD80N02T4G DPAK−3

2500 / Tape & Reel

(Pb−Free)

NTD80N02−1G DPAK−3 Straight Lead

75 Units / Rail

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Spe-

cifications Brochure, BRD8011/D.

†

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Page 6

12 3

0.005 (0.13) C

DETAIL A

NTD80N02

PACKAGE DIMENSIONS

DPAK (SINGLE GAUGE)

CASE 369AA−01

ISSUE B

GAUGE

PLANE

DETAIL A

ROTATED 90 CW5

SOLDERING FOOTPRINT*

6.20

0.244

2.58

0.101

0.118

3.0

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: INCHES.

3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE.

SEATING

PLANE

5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY.

6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H.

DIM MIN MAX MIN MAX

A 0.086 0.094 2.18 2.38

A1 0.000 0.005 0.00 0.13

b 0.025 0.035 0.63 0.89 b2 0.030 0.045 0.76 1.14 b3 0.180 0.215 4.57 5.46

c 0.018 0.024 0.46 0.61 c2 0.018 0.024 0.46 0.61

D 0.235 0.245 5.97 6.22

E 0.250 0.265 6.35 6.73

e 0.090 BSC 2.29 BSC

H 0.370 0.410 9.40 10.41

L 0.055 0.070 1.40 1.78 L1 0.108 REF 2.74 REF L2 0.020 BSC 0.51 BSC L3 0.035 0.050 0.89 1.27 L4 −−− 0.040 −−− 1.01

Z 0.155 −−− 3.93 −−−

STYLE 2:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

MILLIMETERSINCHES

5.80

0.228

1.6

0.063

SCALE 3:1

6.172

0.243

inches

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

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Page 7

12 3

0.005 (0.13) C

DETAIL A

NTD80N02

PACKAGE DIMENSIONS

DPAK (SINGLE GAUGE)

CASE 369C−01

ISSUE D

GAUGE

PLANE

DETAIL A

ROTATED 90 CW5

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: INCHES.

3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE.

SEATING

PLANE

5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY.

6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H.

DIM MIN MAX MIN MAX

A 0.086 0.094 2.18 2.38

A1 0.000 0.005 0.00 0.13

b 0.025 0.035 0.63 0.89 b2 0.030 0.045 0.76 1.14 b3 0.180 0.215 4.57 5.46

c 0.018 0.024 0.46 0.61 c2 0.018 0.024 0.46 0.61

D 0.235 0.245 5.97 6.22

E 0.250 0.265 6.35 6.73

e 0.090 BSC 2.29 BSC

H 0.370 0.410 9.40 10.41

L 0.055 0.070 1.40 1.78 L1 0.108 REF 2.74 REF L2 0.020 BSC 0.51 BSC L3 0.035 0.050 0.89 1.27 L4 −−− 0.040 −−− 1.01

Z 0.155 −−− 3.93 −−−

STYLE 2:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

MILLIMETERSINCHES

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Page 8

NTD80N02

PACKAGE DIMENSIONS

DPAK

CASE 369D−01

ISSUE B

−T−

SEATING PLANE

123

D 3 PL

0.13 (0.005) T

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM MIN MAX MIN MAX

A 0.235 0.245 5.97 6.35 B 0.250 0.265 6.35 6.73 C 0.086 0.094 2.19 2.38 D 0.027 0.035 0.69 0.88 E 0.018 0.023 0.46 0.58 F 0.037 0.045 0.94 1.14

0.090 BSC 2.29 BSC

G H 0.034 0.040 0.87 1.01 J 0.018 0.023 0.46 0.58 K 0.350 0.380 8.89 9.65 R 0.180 0.215 4.45 5.45 S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−−

STYLE 2:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

MILLIMETERSINCHES

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NTD80N02/D