Datasheet ntd6600n-d Datasheet

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Page 1

NTD6600N

Power MOSFET

100 V, 12 A, N−Channel, Logic Level DPAK

Features

• Source−to−Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

• Avalanche Energy Specified

• Logic Level

• Pb−Free Packages are Available

(BR)DSS

100 V

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TYP

DS(on)

118 mW @ 5.0 V

ID MAXV

12 A

Typical Applications

• PWM Motor Controls

• Power Supplies

• Converters

MAXIMUM RATINGS (T

Rating Symbol Value Unit

Drain−to−Source Voltage V Drain−to−Source Voltage (RGS = 1.0 MW) Gate−to−Source Voltage

− Continuous

Drain Current − Continuous @ TA = 25°C

Drain Current − Continuous @ TA =100°C Drain Current − Pulsed (Note 3)

Total Power Dissipation

Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1) Total Power Dissipation @ TA = 25°C (Note 2)

Operating and Storage Temperature Range TJ, T

Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C

(VDD = 50 Vdc, VGS = 5.0 Vdc, IL = 12 Apk, L = 1.0 mH, RG = 25 W)

Thermal Resistance

− Junction−to−Case

− Junction−to−Ambient (Note 1)

− Junction−to−Ambient (Note 2)

Maximum Temperature for Soldering

Purposes, (1/8″ from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. When surface mounted to an FR4 board using 0.5 sq in pad size.

2. When surface mounted to an FR4 board using the minimum recommended pad size.

3. Pulse Test: Pulse Width = 10 ms, Duty Cycle = 2%.

= 25°C unless otherwise noted)

DSS

DGR

stg

100 Vdc 100 Vdc

± 20 Vdc

9.0 44

56.6

0.38

W/°C

1.76

1.28

− 55 to +175

72 mJ

°C/W

2.65 85

117 260 °C

Adc

Apk

W W

°C

N−Channel

MARKING

DIAGRAMS

Drain

Y = Year WW = Work Week NT6600 = Device Code G = Pb−Free Package

DPAK

CASE 369C

(Surface Mounted)

STYLE 2

DPAK−3

CASE 369D

(Straight Lead)

STYLE 2

Gate

YWWNT6600G

Drain

Sourc

Drain

YWWNT6600G

Sourc

Drain

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.

March, 2007 − Rev. 4

1 Publication Order Number:

NTD6600N/D

Page 2

NTD6600N

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 mAdc)

Zero Gate Voltage Drain Current

(VGS = 0 Vdc, VDS = 100 Vdc, TJ = 25°C) (VGS = 0 Vdc, VDS = 100 Vdc, TJ = 125°C)

Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) I

ON CHARACTERISTICS

Gate Threshold Voltage

VDS = V

ID = 250 mAdc)

GS,

Temperature Coefficient (Negative) Static Drain−to−Source On−State Resistance (VGS = 5.0 Vdc, ID = 6.0 Adc) R Drain−to−Source On−Voltage (VGS = 5.0 Vdc, ID = 12 Adc) V Forward Transconductance (VDS = 10 Vdc, ID = 6.0 Adc) g

DYNAMIC CHARACTERISTICS

Input Capacitance Output Capacitance C

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Reverse Transfer Capacitance C

SWITCHING CHARACTERISTICS (Notes 4 & 5)

Turn−On Delay Time Rise Time t Turn−Off Delay Time t

= 80 Vdc, ID = 6.0 Adc,

VGS = 5.0 Vdc, RG = 9.1 W)

Fall Time t Total Gate Charge Gate−to−Source Charge Q

(VDS = 80 Vdc, ID = 6.0 Adc,

VGS = 5.0 Vdc)

Gate−to−Drain Charge Q

BODY−DRAIN DIODE RATINGS (Note 4)

Diode Forward On−Voltage (IS = 12 Adc, VGS = 0 Vdc)

(IS = 12 Adc, VGS = 0 Vdc, TJ = 125°C)

Reverse Recovery Time

(IS = 12 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/ms)

Reverse Recovery Stored Charge Q

4. Indicates Pulse Test: P.W. = 300 ms max, Duty Cycle = 2%.

5. Switching characteristics are independent of operating junction temperature.

(BR)DSS

DSS

GSS

GS(th)

DS(on) DS(on)

oss

rss

d(on)

d(off)

t t t

100 − −

Vdc

mAdc

−

1.0 10

− − ± 100 nAdc

1.0

−

− 118 146

1.5

−4.4

2.0

−

mV/°C

Vdc

− 1.5 2.2 Vdc

− 10 − mhos

iss

− 463 700 pF

− 116 225

− 36 75

− 10.5 20 ns

− 75 140

− 26 40

tot

rr a b

− 50 90

− 11.3 20 nC

− 1.9 −

− 7.4 −

−

− 80 −

0.90

0.80

1.4

−

Vdc

− 50 −

− 30 −

− 0.240 −

ORDERING INFORMATION

Device Package Shipping

NTD6600N DPAK NTD6600N−1 DPAK−3

NTD6600N−1G DPAK−3

75 Units/Rail

(Pb−Free)

NTD6600NT4 DPAK NTD6600NT4G DPAK

2500 Tape & Reel

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

†

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Page 3

NTD6600N

TYPICAL CHARACTERISTICS

VGS = 9 V

21 18 15 12

9 6

, DRAIN CURRENT (AMPS)

3 0

10 V

042

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

0.4 VGS = 5 V

0.3

0.2

4.2 V

5.5 V

TJ = 150°C

TJ = 25°C

4 V

3.8 V

3.4 V

3 V

2.6 V

VDS ≥ 10 V

TJ = 150°C

, DRAIN CURRENT (AMPS)

036

VGS, GATE−TO−SOURCE VOLTAGE (V)

0.20 TJ = 25°C

0.18

0.16

0.14

0.12

VGS = 5 V

TJ = −55°C

TJ = 25°C

45810

TJ = 25°C

0.1

, DRAIN−TO−SOURCE RESISTANCE (W)

0481216

DS(on)

TJ = −55°C

ID, DRAIN CURRENT (A)

Figure 3. On−Resistance versus Drain Current

and Temperature

2.5 ID = 12 A

2.25

2.0

1.75

1.5

1.25

1.0

0.75

0.5

, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)

DS(on)

= 5 V

−50 −25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

0.10

0.08

0.06

, DRAIN−TO−SOURCE RESISTANCE (W)

0.04 0 4 8 12162024

DS(on)

VGS = 10 V

ID, DRAIN CURRENT (A)

Figure 4. On−Resistance versus Drain Current

and Temperature

10000

VGS = 0 V

TJ = 150°C

1000

, LEAKAGE (nA)

100

DSS

0 102030405060708090100

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

TJ = 125°C

Figure 6. Drain−To−Source Leakage

Current versus Voltage

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Page 4

NTD6600N

t, TIME (ns)

, DRAIN CURRENT (AMPS)

TYPICAL CHARACTERISTICS

1500

TJ = 25°C V

= 0 V

1250

iss

1000

750

500

rss

iss

oss

C, CAPACITANCE (pF)

250

0 10 5 05 10152025

VGSV

DRAIN−TO−SOURCE VOLTAGE (V)

rss

Figure 7. Capacitance Variation Figure 8. Gate−to−Source and

1000

VDS = 80 V ID = 6 A VGS = 5 V

100

d(off)

d(on)

ID = 12 A

, GATE−TO−SOURCE VOLTAGE (V)

0 2 4 6 8 10 12 14 16 18

TJ = 25°C

Qg, TOTAL GATE CHARGE (nC)

Drain−to−Source Voltage versus Total Charge

VGS = 0 V

TJ = 25°C

100 90 80 70 60 50 40 30 20 10 0

, DRAIN−TO−SOURCE VOLTAGE (V) V

10 100

RG, GATE RESISTANCE (W)

Figure 9. Resistive Switching Time Variation

versus Gate Resistance

1000

VGS = 20 V SINGLE PULSE TC = 25°C

100

10 ms

100 ms 1 ms

1.0 R

LIMIT

DS(on)

THERMAL LIMIT

10 ms dc

PACKAGE LIMIT

0.1

0.1 1.0 10 100 1000 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

, SOURCE CURRENT (AMPS)

0 0.25 0.5 0.75 1.

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 10. Diode Forward Voltage versus

Current

80 70 60 50 40 30 20 10

EAS, SINGLE PULSE DRAIN −TO −

SOURCE AVALANCE ENGERGY (mJ)

25 50 75 100 125 150 17

TJ, STARTING JUNCTION TEMPERATURE (°C)

Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature

ID = 12 A

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Page 5

NTD6600N

PACKAGE DIMENSIONS

DPAK

CASE 369C−01

ISSUE O

NOTES:

SEATING

−T−

PLANE

123

2 PL

0.13 (0.005) T

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM MIN MAX MIN MAX

A 0.235 0.245 5.97 6.22 B 0.250 0.265 6.35 6.73 C 0.086 0.094 2.19 2.38 D 0.027 0.035 0.69 0.88 E 0.018 0.023 0.46 0.58 F 0.037 0.045 0.94 1.14 G 0.180 BSC 4.58 BSC H 0.034 0.040 0.87 1.01 J 0.018 0.023 0.46 0.58 K 0.102 0.114 2.60 2.89 L 0.090 BSC 2.29 BSC R 0.180 0.215 4.57 5.45 S 0.025 0.040 0.63 1.01 U 0.020 −−− 0.51 −−− V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−−

STYLE 2:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

MILLIMETERSINCHES

SOLDERING FOOTPRINT*

6.20

0.244

2.58

0.101

5.80

0.228

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

3.0

0.118

0.063

1.6

SCALE 3:1

6.172

0.243

inches

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Page 6

NTD6600N

PACKAGE DIMENSIONS

DPAK−3

CASE 369D−01

ISSUE B

−T−

SEATING PLANE

123

D 3 PL

0.13 (0.005) T

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM MIN MAX MIN MAX

A 0.235 0.245 5.97 6.35 B 0.250 0.265 6.35 6.73 C 0.086 0.094 2.19 2.38 D 0.027 0.035 0.69 0.88 E 0.018 0.023 0.46 0.58 F 0.037 0.045 0.94 1.14

0.090 BSC 2.29 BSC

G H 0.034 0.040 0.87 1.01 J 0.018 0.023 0.46 0.58 K 0.350 0.380 8.89 9.65 R 0.180 0.215 4.45 5.45 S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−−

STYLE 2:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

MILLIMETERSINCHES

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

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NTD6600N/D