Datasheet ntd65n03r-d Datasheet

Download

Page 1

NTD65N03R

)

Power MOSFET

25 V, 65 A, Single N−Channel, DPAK

Features

• Low R

• Ultra Low Gate Charge

• Low Reverse Recovery Charge

• Pb−Free Packages are Available

Applications

• Desktop CPU Power

• DC−DC Converters

• High and Low Side Switch

MAXIMUM RATINGS (T

Drain−to−Source Voltage V Gate−to−Source Voltage V

Continuous Drain Current (R by Die

Continuous Drain Current (R by Wire

Power Dissipation (R

Continuous Drain Current (Note 1)

Power Dissipation (Note 1)

Continuous Drain Current (Note 2)

Power Dissipation (Note 2)

Pulsed Drain Current Operating Junction and Storage

Temperature Drain−to−Source (dv/dt) dv/dt 2.0 V/ns

Source Current (Body Diode) I Single Pulse Drain−to−Source Avalanche

Energy (VDD = 24 V, VGS = 10 V, IL = 12 A, L = 1.0 mH, RG = 25 W)

Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 in sq pad size

2. Surface−mounted on FR4 board using the minimum recommended pad size

DS(on)

= 25°C unless otherwise noted)

Parameter Symbol Value Unit

) Limited

)

(Cu area = 1.127 in sq [1 oz] including traces). (Cu area = 0.15 in sq) [1 oz] including traces.

Steady

State

Steady

State

Steady

State

TC = 25°C TC = 85°C 45 TC = 25°C I

TC = 25°C P

TA = 25°C TA = 85°C 8.9 TA = 25°C P

TA = 25°C TA = 85°C 7.4 TA = 25°C P

tp = 10 ms

DSS

TJ, T

25 V

"20 V

32 A

stg

50 W

11.4

1.88 W

9.5

1.3 W

130 A

− 55 to 175

2.1 A

71.7 mJ

260 °C

°C

http://onsemi.com

(BR)DSS

25 V

CASE 369AA

DPAK

(Bend Lead)

STYLE 2

6.5 mW @ 10 V

9.7 mW @ 4.5 V

(Straight Lead)

TYP

DS(on)

N−Channel

CASE 369D

DPAK

STYLE 2

ID MAXV

65 A

CASE 369AC

3 IPAK

(Straight Lead

MARKING DIAGRAMS

& PIN ASSIGNMENTS

Drain

YWW65N03G

Gate

Source

Drain

Y = Year WW = Work Week 65N03 = Device Code G = Pb−Free Package

Gate

Drain

3 Source

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet.

July, 2006 − Rev. 3

1 Publication Order Number:

NTD65N03R/D

Page 2

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction−to−Case (Drain) Junction−to−Ambient − Steady State (Note 3) Junction−to−Ambient − Steady State (Note 4)

NTD65N03R

2.5 80

115

°C/W

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

Parameter Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V Drain−to−Source Breakdown Voltage

(BR)DSS

(BR)DSS/TJ

VGS = 0 V, ID = 250 mA

25 29.5 V

19.2 mV/°C

Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate−to−Source Leakage Current I

DSS

GSS

VGS = 0 V,

VDS = 20 V

VDS = 0 V, VGS = "20 V "100 nA

TJ = 25°C 1.5

TJ = 125°C 10

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage V Negative Threshold Temperature Coefficient V Drain−to−Source On Resistance R

GS(TH)

GS(TH)/TJ

DS(on)

VGS = VDS, ID = 250 mA

VGS = 10 V, ID = 30 A 6.5 8.4

1.0 1.74 2.0 V

4.8 mV/°C

VGS = 4.5 V, ID = 30 A 9.7 14.6

Forward Transconductance g

VDS = 15 V, ID = 15 A 27 mHos

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C Total Gate Charge Q Threshold Gate Charge Q Gate−to−Source Charge Q Gate−to−Drain Charge Q

iss oss rss

G(TOT)

G(TH)

GS GD

VGS = 0 V, f = 1.0 MHz,

VDS = 20 V

VGS = 5.0 V, VDS = 10 V,

ID = 30 A

1177 1400

555 218

12.2 16

1.5

2.95

6.08

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time t Rise Time t Turn−Off Delay Time t Fall Time t

d(on)

d(off)

VGS = 10 V, VDS = 25 V,

ID = 30 A, R

= 3.0 W

6.3

18.6

20.3

8.8

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage V

Reverse Recovery Time t Charge Time t Discharge Time t Reverse Recovery Time Q

b RR

VGS = 0 V,

IS = 20 A

VGS = 0 V, dIS/dt = 100 A/ms

TJ = 25°C 0.85 1.1

TJ = 125°C 0.72

IS = 20 A

28.8

12.8 16 20 nC

PACKAGE PARASITIC VALUES

Source Inductance L Drain Inductance L Gate Inductance L Gate Resistance R

S D G G

TA= 25°C

2.49

0.02

3.46

1.75

3. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).

4. Surface−mounted on FR4 board using the minimum recommended pad size (Cu area = 0.15 in sq [1 oz] including traces).

5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

6. Switching characteristics are independent of operating junction temperatures.

http://onsemi.com

Page 3

NTD65N03R

140

, DRAIN−TO−SOURCE RESISTANCE (

)

140

, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)

10 V

120

100

, DRAIN CURRENT (AMPS)

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

7 V 6 V

5.5 V 5 V

TJ = 25°C

4.5 V

4.2 V 4 V

3.8 V

3.6 V

3.4 V

3.2 V 3 V

2.8 V

VDS ≥ 10 V

120

100

, DRAIN CURRENT (AMPS)

036

TJ = 125°C

TJ = 25°C

TJ = −55°C

VGS, GATE−TO−SOURCE VOLTAGE (V)

45810

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

0.03 VGS = 10 V

0.026

0.022

0.018

0.03

0.026

0.022

0.018

VGS = 4.5 V

TJ = 150°C

0.014

0.01

0.006

0.002

DS(on)

20 60 80 140

TJ = 150°C

TJ = 125°C TJ = 25°C TJ = −55°C

100 120

ID, DRAIN CURRENT (A)

Figure 3. On−Resistance versus Drain Current

and Temperature

1.6

1.4

1.2

1.0

0.8

ID = 30 A V

= 10 V

0.014

0.01

0.006

, DRAIN−TO−SOURCE RESISTANCE (W)

0.002 0

DS(on)

Figure 4. On−Resistance versus Drain Current

10000

1000

, LEAKAGE (nA)

DSS

VGS = 0 V

TJ = 150°C

TJ = 125°C

TJ = 25°C

TJ = −55°C

20 60 80 14

ID, DRAIN CURRENT (A)

100 120

and Temperature

0.6

−50 100750−25 125 150 TJ, JUNCTION TEMPERATURE (°C)

DS(on)

Figure 5. On−Resistance Variation with

5025

Temperature

100

01612820

http://onsemi.com

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 6. Drain−To−Source Leakage

Current versus Voltage

Page 4

NTD65N03R

)

t, TIME (ns)

2400

2000

1600

1200

800

C, CAPACITANCE (pF)

400

1000

VDS = 10 V ID = 35 A VGS = 10 V

100

VGS = 0 V

TJ = 25°C

iss

oss

rss

41216

DRAIN−TO−SOURCE VOLTAGE (V)

, GATE−TO−SOURCE VOLTAGE (V

Qg, TOTAL GATE CHARGE (nC)

81216

Figure 7. Capacitance Variation Figure 8. Gate−to−Source and

Drain−to−Source Voltage versus Total Charge

VGS = 0 V

d(off)

ID = 30 A TJ = 25°C

10 100

RG, GATE RESISTANCE (W)

Figure 9. Resistive Switching Time Variation

versus Gate Resistance

100

VGS = 20 V SINGLE PULSE TC = 25°C

, DRAIN CURRENT (AMPS)

0.1 1 100 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 11. Maximum Rated Forward Biased

d(on)

, SOURCE CURRENT (AMPS)

010.80.60.4

LIMIT

DS(on)

THERMAL LIMIT PACKAGE LIMIT

Safe Operating Area

TJ = 150°C

TJ = 25°C

0.2

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 10. Diode Forward Voltage versus

Current

10 ms

100 ms

1 ms 10 ms

http://onsemi.com

Page 5

NTD65N03R

ORDERING INFORMATION

Order Number Package Shipping

NTD65N03R DPAK−3 75 Units / Rail NTD65N03RG DPAK−3

(Pb−Free) NTD65N03RT4 DPAK−3 2500 / Tape & Reel NTD65N03RT4G DPAK−3

(Pb−Free) NTD65N03R−1 DPAK−3 Straight Lead 75 Units / Rail NTD65N03R−1G DPAK−3 Straight Lead

(Pb−Free) NTD65N03R−35 DPAK Straight Lead Trimmed

(3.5 ± 0.15 mm)

NTD65N03R−35G DPAK Straight Lead Trimmed

(3.5 ± 0.15 mm)

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

75 Units / Rail

2500 / Tape & Reel

75 Units / Rail

†

http://onsemi.com

Page 6

NTD65N03R

PACKAGE DIMENSIONS

DPAK (SINGLE GUAGE)

CASE 369AA−01

ISSUE A

NOTES:

SEATING

−T−

PLANE

123

2 PL

0.13 (0.005) T

SOLDERING FOOTPRINT*

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM MIN MAX MIN MAX

A 0.235 0.245 5.97 6.22 B 0.250 0.265 6.35 6.73 C 0.086 0.094 2.19 2.38 D 0.025 0.035 0.63 0.89 E 0.018 0.024 0.46 0.61 F 0.030 0.045 0.77 1.14 H 0.386 0.410 9.80 10.40 J 0.018 0.023 0.46 0.58 L 0.090 BSC 2.29 BSC R 0.180 0.215 4.57 5.45 S 0.024 0.040 0.60 1.01 U 0.020 −−− 0.51 −−− V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−−

STYLE 2:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

MILLIMETERSINCHES

6.20

0.244

2.58

3.0

0.118

0.101

5.80

0.228

1.6

0.063

SCALE 3:1

6.172

0.243

inches

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

http://onsemi.com

Page 7

NTD65N03R

PACKAGE DIMENSIONS

DPAK

CASE 369D−01

ISSUE B

−T−

SEATING PLANE

B R

123

D 3 PL

0.13 (0.005) T

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM MIN MAX MIN MAX

A 0.235 0.245 5.97 6.35 B 0.250 0.265 6.35 6.73 C 0.086 0.094 2.19 2.38 D 0.027 0.035 0.69 0.88 E 0.018 0.023 0.46 0.58 F 0.037 0.045 0.94 1.14

0.090 BSC 2.29 BSC

G H 0.034 0.040 0.87 1.01 J 0.018 0.023 0.46 0.58 K 0.350 0.380 8.89 9.65 R 0.180 0.215 4.45 5.45 S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−−

STYLE 2:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

MILLIMETERSINCHES

3 IPAK, STRAIGHT LEAD

CASE 369AC−01

ISSUE O

SEATING PLANE

3 PL

0.13 (0.005) W

NOTES:

1.. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.. CONTROLLING DIMENSION: INCH.

3. SEATING PLANE IS ON TOP OF DAMBAR POSITION.

4. DIMENSION A DOES NOT INCLUDE DAMBAR POSITION OR MOLD GATE.

DIM MIN MAX MIN MAX

A 0.235 0.245 5.97 6.22 B 0.250 0.265 6.35 6.73 C 0.086 0.094 2.19 2.38 D 0.027 0.035 0.69 0.88 E 0.018 0.023 0.46 0.58

F 0.037 0.043 0.94 1.09 G 0.090 BSC 2.29 BSC H 0.034 0.040 0.87 1.01

J 0.018 0.023 0.46 0.58 K 0.134 0.142 3.40 3.60 R 0.180 0.215 4.57 5.46 V 0.035 0.050 0.89 1.27 W 0.000 0.010 0.000 0.25

MILLIMETERSINCHES

http://onsemi.com

Page 8

NTD65N03R

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected]

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5773−3850

http://onsemi.com

ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit

For additional information, please contact your local Sales Representative

NTD65N03R/D