Datasheet ntd6415anl-d Datasheet

NTD6415ANL

N--Channel Power MOSFET
100 V, 23 A, 56 mΩ, Logic
Level

Features

 Low R
 100% Avalanche Tested
 AEC--Q101 Qualified
 These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS

MAXIMUM RATINGS (T

Drain--to--Source Voltage V

Gate--to--Source Voltage -- Continuous V

Continuous Drain
Current

Power Dissipation Steady

Pulsed Drain Current

Operating and Storage Temperature Range TJ,T

Source Current (Body Diode) I

Single Pulse Drain --to--Source Avalanche
Energy (V
23 A, L = 0.3 mH, R

Lead Temperature for Soldering
Purposes, 1/8 from Case for 10 Seconds

DS(on)

Compliant

DD

=25C unless otherwise noted)

J

Parameter

Steady

State

State

=50Vdc,VGS=10Vdc,I

=25Ω)

G

TC=25C

TC= 100C 16

TC=25C P

tp=10ms

L(pk)

Symbol Value Unit

stg

100 V

±20 V

23

83 W

80 A

-- 5 5 t o
+175

23 A

79 mJ

260 C

DSS

GS

I

D

D

I

DM

S

E

AS

=

T

L

A

C

V

(BR)DSS

100 V

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R

56 m Ω @4.5V

52 m Ω @10V

G

CASE 369AA

MAX IDMAX

DS(on)

D

S

2

1

3

DPAK

STYLE 2

23 A

4

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Unit

Junction--to--Case (Drain) -- Steady State

Junction--to--Ambient -- Steady State (Note 1)

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu A rea 1.127 sq in [2 oz] including traces).

 Semiconductor Components Industries, LLC, 2010

March, 2010 -- Rev. 0

R

θ

JC

R

θ

JA

C/W

1.8

39

1 Publication Order Number:

MARKING DIAGRAM

& PIN ASSIGNMENT

4Drain

YWW

6415AN

LG

1

Gate

Drain

6415ANL = Device Code
Y = Year
WW = Work Week
G = Pb--Free Package

3

2

Source

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.

NTD6415ANL/D

NTD6415ANL

ELECTRICAL CHARACTERISTICS (T

=25C unless otherwise noted)

J

Parameter Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain--to--Source Breakdown Voltage

Drain--to--Source Breakdown Voltage

V

(BR)DSS

V

(BR)DSS/TJ

VGS=0V,ID= 250 mA

V

=0V,ID= 250 mA, TJ=--40C

GS

Temperature Coefficient

Zero Gate Voltage Drain Current I

Gate--to--Source Leakage Current I

DSS

GSS

VGS=0V,

= 100 V

V

DS

VDS=0V,VGS= 20 V 100 nA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

Negative Threshold Temperature

V

GS(TH)

V

GS(TH)/TJ

VGS=VDS,ID= 250 mA

Coefficient

Drain--to--Source On--Resistance R

DS(on)

VGS=4.5V,ID=10A

VGS=10V,ID=10A 43 52

Forward Transconductance g

FS

VDS=5.0V,ID=10A 24

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Threshold Gate Charge Q

Gate--to--Source Charge Q

Gate--to--Drain Charge Q

Total Gate Charge Q

C

ISS

OSS

RSS

G(TOT)

G(TH)

GS

GD

G(TOT)

VGS=0V,f=1.0MHz,VDS=25V

VGS=4.5V,VDS=80V,ID=23A

VGS=10V,VDS=80V,ID=23A 35 nC

SWITCHING CHARACTERISTICS (Note 3)

Turn--On Delay Time

Rise Time t

Turn--Off Delay Time t

Fall Time t

t

d(on)

d(off)

r

f

VGS=4.5V,VDD=80V,

I

=23A,RG=6.1Ω

D

DRAIN--SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time t

Charge Time T

Discharge Time T

Reverse Recovery Charge Q

V

SD

RR

a

b

RR

VGS=0V,IS=23A

VGS=0V,dIS/dt = 100 A/ms,

=23A

I

S

2. Pulse Test: Pulse Width  300 ms, Duty Cycle  2%.

3. Switching characteristics are independent of operating junction temperatures.

100

92

115 mV/C

TJ=25C 1.0

TJ= 125C 100

1.0 2.0 V

4.8 mV/C

44 56

1024

156

70

20

1.1

3.1

14

11

91

40

71

TJ=25C 0.87 1.2

TJ= 125C 0.74

64

40

24

152 nC

V

mA

mΩ

S

pF

nC

ns

V

ns

ORDERING INFORMATION

Device Package Shipping

NTD6415ANLT4G DPAK

2500 / Tape & Reel

(Pb--Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specification B rochure, BRD8011/D.

†

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2

NTD6415ANL

, DRAIN CURRENT (A)

D

I

45

40

35

30

VGS=10V

5V

4V

TJ=25C

3.6 V

3.4 V

25

20

15

10

3.2 V

3.0 V

2.8 V

5

0

012345

, DRAIN--TO--SOURCE VOLTAGE (V)

V

DS

Figure 1. On --Region Characteristics

0.050

0.048

0.046

0.044

ID=23A

T

=25C

J

45

VDS≥ 10 V

40

35

30

25

20

TJ=25C

TJ=--55C

, DRAIN CURRENT (A)

D

I

15

10

TJ= 125C

5

0

1234

VGS, GATE--TO--SOURCE VOLTAGE (V)

Figure 2. Transfer Characteristics

0.050

0.048

0.046

0.044

TJ=25C

VGS=4.5V

0.042

, DRAIN--TO--SOURCE RESISTANCE (Ω)

0.040

R

DS(on)

2345678910

, GATE--TO--SOURCE VOLTAGE (V)

V

GS

Figure 3. On--Region versus Gate Voltage

3.0

ID=23A

V

=4.5V

2.5

GS

2.0

1.5

(NORMALIZED)

1.0

, DRAIN--TO--SOURCE RESISTANCE

DS(on)

0.5

R

--50 --25 0 25 50 75 100 125 150 175

, J UNCTION TEMPERATURE (C)

T

J

Figure 5. On --Resistance Variation with

Temperature

VGS=10V

0.042

, DRAIN--TO--SOURCE RESISTANCE (Ω)

0.040

DS(on)

5 10152025

R

, DRAIN CURRENT (A)

I

D

Figure 4. On--Resistance versus Drain

Current and Gate Voltage

10000

VGS=0V

TJ= 150C

1000

, LEAKAGE (nA)

DSS

I

100

10 20 30 40 50 60 70 80 90 100

TJ= 125C

VDS, DRAIN--TO--SOURCE VOLTAGE (V)

Figure 6. Drain--to--Source Leakage Current

versus Voltage

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3

NTD6415ANL

2500

TJ=25C
V

2000

GS

1500

C

1000

C, CAPACITANCE (pF)

500

C

rss

iss

C

oss

0

0 102030405060708090100

, DRAIN--TO--SOURCE VOLTAGE (V)

V

DS

Figure 7. Capacitance Variation

1000

VDS=80V

I

=23A

D

V

=4.5V

GS

t

r

t

f

t

d(off)

t

d(on)

t, TIME (ns)

100

10

=0V

10

Q

T

8

6

Q

ds

, GATE--TO--SOURCE VOLTAGE (V)

V

GS

4

2

0

Q

gs

VDS=80V

I

T

0 5 10 15 20 25 30 35

Qg, TOTAL GATE CHARGE (nC)

Figure 8. Gate--to-- Source Voltage and

Drain--to-- Source Voltage versus Total Charge

25

TJ=25C

V

=0V

GS

20

15

10

, S OURCE CURRENT (A)

5

S

I

=23A

D

=25C

J

1

1 10 100

R

, G ATE RESISTANCE (Ω)

G

Figure 9. Resistive Switching Time Variation

100

10

VGS=10V
SINGLE PULSE
T

C

1

, DRAIN CURRENT (A)

D

I

0.1
1 10 100 1000

versus Gate Resistance

=25C

R

LIMIT

DS(on)

THERMAL LIMIT
PACKAGE LIMIT

V

, DRAIN--TO--SOURCE VOLTAGE (V)

DS

10 ms

100 ms

1ms

10 ms

dc

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

0

0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95

VSD, SOURCE --TO--DRAIN VOLTAGE (V)

Figure 10. Diode Forward Voltage versus

125

100

75

50

25

AVALANCHE ENERGY (mJ)

0

25 50 75 100 125 150 175

TJ, S TARTING JUNCTION TEMPERATURE

Current

ID=23A

Figure 12. Maximum Avalanche Energy versus

Starting Junction Temperature

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4

NTD6415ANL

10

Duty Cycle = 0.5

1

0.2

0.1

0.05

0.1

0.02

0.01

THERMAL RESISTANCE

0.01

(C/W) EFFECTIVE TRANSIENT

JC(t)

θ

R

0.001

SINGLE PULSE

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10

t, PULSE TIME (s)

Figure 13. Thermal Response

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NTD6415ANL

PACKAGE DIMENSIONS

DPAK (SINGLE GUAGE)

CASE 369AA--01

ISSUE A

NOTES:

SEATING

-- T --

PLANE

B

V

S

R

4

123

A

H

C

E

Z

U

F

J

L

D

2PL

0.13 (0.005) T

M

1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM MIN MAX MIN MAX

A 0.235 0.245 5.97 6.22
B 0.250 0.265 6.35 6.73
C 0.086 0.094 2.19 2.38
D 0.025 0.035 0.63 0.89
E 0.018 0.024 0.46 0.61
F 0.030 0.045 0.77 1.14
H 0.386 0.410 9.80 10.40
J 0.018 0.023 0.46 0.58
L 0.090 BSC 2.29 BSC
R 0.180 0.215 4.57 5.45
S 0.024 0.040 0.60 1.01
U 0 . 0 2 0 -- -- -- 0 . 5 1 -- -- --
V 0.035 0.050 0.89 1.27
Z 0 . 1 5 5 -- -- -- 3 . 9 3 -- -- --

STYLE 2:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

MILLIMETERSINCHES

SOLDERING FOOTPRINT*

6.20

0.244

5.80

0.228

*For additional information on our Pb--Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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2.58

0.101

3.0

0.118

0.063

1.6

SCALE 3:1

6.172

0.243

mm



inches



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NTD6415ANL/D